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| Position: Chinese Standard in English/GB 10275-1988 |
| GB 10275-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1191 (English Version) | |||
| Standard No.: | GB 10275-1988 | Status: | superseded remind me the status change |
| Language: | English | File Format: | |
| Word Count: | 4000 words | Price(USD): | 340.0 remind me the price change |
| Implemented on: | 1989-8-1 | Delivery: | via email in 1~3 business day |
| Standard No.: | GB 10275-1988 |
| English Name: | Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1191 |
| Chinese Name: | 电子器件详细规范 4CS1191 型硅高频双绝缘栅场效应晶体管(可供认证用) |
| Chinese Classification: | L44 Field effect device |
| Professional Classification: | GB National Standard |
| Implemented on: | 1989-8-1 |
| Status: | superseded |
| Superseded by: | SJ/T 11056-1996 Detailed specifications for electronic components - 4CS1191 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) |
| Language: | English |
| File Format: | |
| Word Count: | 4000 words |
| Price(USD): | 340.0 |
| Delivery: | via email in 1~3 business day |