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Position: Chinese Standard in English/GB/T 15450-1995
GB/T 15450-1995   Blank detail specification for silicon dual-qute field-effect transistors (English Version)
Standard No.: GB/T 15450-1995 Status:abolished remind me the status change

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Target Language:English File Format:PDF
Word Count: 7500 words Translation Price(USD):220.0 remind me the price change

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Implemented on:1995-8-1 Delivery: via email in 1~3 business day

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2005-10-14,,1995-8-1,F20E285DBD1B5E3E1513905646144
Standard No.: GB/T 15450-1995
English Name: Blank detail specification for silicon dual-qute field-effect transistors
Chinese Name: 硅双栅场效应晶体管空白详细规范
Chinese Classification: L44    Field effect device
Professional Classification: GB    National Standard
ICS Classification: 31.080.99 31.080.99    Other semiconductor devices 31.080.99
Source Content Issued by: SBTS
Issued on: 1995-01-05
Implemented on: 1995-8-1
Status: abolished
Abolished on:2005-10-14
Superseding:作废
Target Language: English
File Format: PDF
Word Count: 7500 words
Translation Price(USD): 220.0
Delivery: via email in 1~3 business day
本空白详细规范规定了制订硅双栅场效应晶体管详细规范的基本原则,制订该范围内的所有详细规范应与本空白详细规范一致。本空白详细规范是半导体器件空白详细规范系列中的一个,并应与下列规范一起使用:GB 4589.1《半导体器件分立器件和集成电路总规范》,GB 12560《半导体器件分立器件分规范》
Code of China
Standard
GB/T 15450-1995  Blank detail specification for silicon dual-qute field-effect transistors (English Version)
Standard No.GB/T 15450-1995
Statusabolished
LanguageEnglish
File FormatPDF
Word Count7500 words
Price(USD)220.0
Implemented on1995-8-1
Deliveryvia email in 1~3 business day
Detail of GB/T 15450-1995
Standard No.
GB/T 15450-1995
English Name
Blank detail specification for silicon dual-qute field-effect transistors
Chinese Name
硅双栅场效应晶体管空白详细规范
Chinese Classification
L44
Professional Classification
GB
ICS Classification
Issued by
SBTS
Issued on
1995-01-05
Implemented on
1995-8-1
Status
abolished
Superseded by
Superseded on
Abolished on
2005-10-14
Superseding
作废
Language
English
File Format
PDF
Word Count
7500 words
Price(USD)
220.0
Keywords
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Introduction of GB/T 15450-1995
本空白详细规范规定了制订硅双栅场效应晶体管详细规范的基本原则,制订该范围内的所有详细规范应与本空白详细规范一致。本空白详细规范是半导体器件空白详细规范系列中的一个,并应与下列规范一起使用:GB 4589.1《半导体器件分立器件和集成电路总规范》,GB 12560《半导体器件分立器件分规范》
Contents of GB/T 15450-1995
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Keywords:
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