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Position: Chinese Standard in English/GB/T 1553-1997 |
GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay (English Version) | |||
Standard No.: | GB/T 1553-1997 | Status: | superseded remind me the status change
Email: |
Language: | English | File Format: | |
Word Count: | 8000 words | Price(USD): | 240.0 remind me the price change
Email: |
Implemented on: | 1997-1-2 | Delivery: | via email in 1~3 business day |
Standard No.: | GB/T 1553-1997 |
English Name: | Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay |
Chinese Name: | 硅和锗体内少数载流子寿命测定光电导衰减法 |
Chinese Classification: | H21 Metal physical property test method |
Professional Classification: | GB National Standard |
ICS Classification: | 77.040.01 77.040.01 Testing of metals in general 77.040.01 |
Issued by: | SBTS |
Issued on: | 1997-06-03 |
Implemented on: | 1997-1-2 |
Status: | superseded |
Superseded by: | GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay |
Superseded on: | 2010-6-1 |
Abolished on: | 2010-06-01 |
Superseding: | GB 1553-1979 Measurement of monocrystalline silicon lifetime by D. C photoconductive decay methods GB 5257-1985 Germanium single crystals--Measurement of minority carrier lifetime--DC photo conductive decay method |
Language: | English |
File Format: | |
Word Count: | 8000 words |
Price(USD): | 240.0 |
Delivery: | via email in 1~3 business day |
GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay (English Version) | |||
Standard No. | GB/T 1553-1997 | ||
Status | superseded | ||
Language | English | ||
File Format | |||
Word Count | 8000 words | ||
Price(USD) | 240.0 | ||
Implemented on | 1997-1-2 | ||
Delivery | via email in 1~3 business day |
Standard No. |
GB/T 1553-1997 |
English Name |
Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay |
Chinese Name |
硅和锗体内少数载流子寿命测定光电导衰减法 |
Chinese Classification |
H21 |
Professional Classification |
GB |
ICS Classification |
Issued by |
SBTS |
Issued on |
1997-06-03 |
Implemented on |
1997-1-2 |
Status |
superseded |
Superseded by |
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay |
Superseded on |
2010-6-1 |
Abolished on |
2010-06-01 |
Superseding |
GB 1553-1979 Measurement of monocrystalline silicon lifetime by D. C photoconductive decay methods GB 5257-1985 Germanium single crystals--Measurement of minority carrier lifetime--DC photo conductive decay method |
Language |
English |
File Format |
Word Count |
8000 words |
Price(USD) |
240.0 |
Keywords |
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Keywords: | ||
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