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| Position: Chinese Standard in English/GB/T 29332-2012 |
| GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) (English Version) | |||
| Standard No.: | GB/T 29332-2012 | Status: | valid remind me the status change |
| Language: | English | File Format: | |
| Word Count: | 25000 words | Price(USD): | 750.0 remind me the price change |
| Implemented on: | 2013-6-1 | Delivery: | via email in 1~3 business day |
| Standard No.: | GB/T 29332-2012 |
| English Name: | Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) |
| Chinese Name: | 半导体器件 分立器件 第9部分：绝缘栅双极晶体管(IGBT) |
| Chinese Classification: | L42 Semiconductor triode |
| Professional Classification: | GB National Standard |
| ICS Classification: |
31.080.01 Semiconductor devices in general
31.080.30 Transistors |
| Issued by: | AQSIQ;SAC |
| Issued on: | 2012-12-31 |
| Implemented on: | 2013-6-1 |
| Status: | valid |
| Language: | English |
| File Format: | |
| Word Count: | 25000 words |
| Price(USD): | 750.0 |
| Delivery: | via email in 1~3 business day |