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| Position: Chinese Standard in English/GB/T 4058-1995 |
| GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers (English Version) | |||
| Standard No.: | GB/T 4058-1995 | Status: | abolished remind me the status change |
| Language: | English | File Format: | |
| Word Count: | 5000 words | Price(USD): | 340.0 remind me the price change |
| Implemented on: | 1995-1-2 | Delivery: | via email in 1~3 business day |
| Standard No.: | GB/T 4058-1995 |
| English Name: | Test method for detection of oxidation induced defects in polished silicon wafers |
| Chinese Name: | 硅抛光片氧化诱生缺陷的检验方法 |
| Chinese Classification: | H26 Metal nondestructive testing method |
| Professional Classification: | GB National Standard |
| ICS Classification: | 77.040.30 Chemical analysis of metals |
| Issued by: | China State Bureau of Technical Supervision |
| Issued on: | 1995-04-18 |
| Implemented on: | 1995-1-2 |
| Status: | abolished |
| Superseded by: | GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers |
| Superseded on: | 2010-6-1 |
| Abolished on: | 2010-06-01 |
| Superseding: | GB 4058-1983 Single crystal silicon--Detection of microdefects--Hot oxidation-etching technique GB 6622-1986 Detects of swirls and striations in chemically polished silicon wafers GB 6623-1986 Standard method for measuring the surface O. S. F of polished silicon wafers |
| Language: | English |
| File Format: | |
| Word Count: | 5000 words |
| Price(USD): | 340.0 |
| Delivery: | via email in 1~3 business day |