GB/T 4326-1984 English Version, GB/T 4326-1984 Extrinsic semiconductor single crystals; Measurement of Hall mobility and Hall coefficient (English Version)

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GB/T 4326-1984 Extrinsic semiconductor single crystals; Measurement of Hall mobility and Hall coefficient (English Version)
Standard No.:	GB/T 4326-1984	Status:	superseded remind me the status change Email:
Language:	English	File Format:	PDF
Word Count:	5000 words	Price(USD):	150.0 remind me the price change Email:
Implemented on:	1985-3-1	Delivery:	via email in 1~3 business day

Standard No.:	GB/T 4326-1984
English Name:	Extrinsic semiconductor single crystals; Measurement of Hall mobility and Hall coefficient
Chinese Name:	非本征半导体单晶霍尔迁移率和霍尔系数测量方法
Chinese Classification:	H21 Metal physical property test method
Professional Classification:	GB National Standard
Issued by:	China State Bureau of Standards
Issued on:	1984-04-12
Implemented on:	1985-3-1
Status:	superseded
Superseded by:	GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Superseded on:	2006-11-1
Abolished on:	2006-11-01
Language:	English
File Format:	PDF
Word Count:	5000 words
Price(USD):	150.0
Delivery:	via email in 1~3 business day

Standard

GB/T 4326-1984 Extrinsic semiconductor single crystals; Measurement of Hall mobility and Hall coefficient (English Version)
Standard No.	GB/T 4326-1984
Status	superseded
Language	English
File Format	PDF
Word Count	5000 words
Price(USD)	150.0
Implemented on	1985-3-1
Delivery	via email in 1~3 business day

Detail of GB/T 4326-1984

Standard No.

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ICS Classification

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Abolished on

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Introduction of GB/T 4326-1984

本标准适用于在非本征半导体单晶试样中确定载流子霍尔迁移率。为获得霍尔迁移率必须测量电阻率和霍尔系数，因此本标准也分别适用于这些参数的测量。本方法仅在有限的范围内和对锗、硅和砷化镓进行了实验室测量，但该方法也可适用于其他半导体单晶材料。所述的测量技术至少适用于室温电阻率高达104Ωcm的试样。

Contents of GB/T 4326-1984

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Keywords:
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