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| GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient (English Version) |
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Detail of GB/T 4326-2006
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Introduction of GB/T 4326-2006
本标准规定的测量方法适用于非本征半导体单晶材料的霍尔系数、载流子霍尔迁移率、电阻率和载流子浓度。 本标准规定的测量方法仅在有限的范围内对锗、硅、砷化镓单晶材料进行了实验室测量，但该方法也可适用于其他半导体单晶材料，一般情况下，适用于室温电阻率高达104Ω·cm
Contents of GB/T 4326-2006