GB/T 4326-2006 English Version, GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient (English Version)

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GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient (English Version)
Standard No.:	GB/T 4326-2006	Status:	valid remind me the status change Email:
Language:	English	File Format:	PDF
Word Count:	7000 words	Price(USD):	210.0 remind me the price change Email:
Implemented on:	2006-11-1	Delivery:	via email in 1~3 business day

Standard No.:	GB/T 4326-2006
English Name:	Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Chinese Name:	非本征半导体单晶霍尔迁移率和霍尔系数测量方法
Chinese Classification:	H21 Metal physical property test method
Professional Classification:	GB National Standard
ICS Classification:	77.040.01 77.040.01 Testing of metals in general 77.040.01
Issued by:	AQSIQ;SAC
Issued on:	2006-7-18
Implemented on:	2006-11-1
Status:	valid
Superseding:	GB/T 4326-1984 Extrinsic semiconductor single crystals; Measurement of Hall mobility and Hall coefficient
Language:	English
File Format:	PDF
Word Count:	7000 words
Price(USD):	210.0
Delivery:	via email in 1~3 business day

GB/T 4326-2006 is referred in:

Standard

GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient (English Version)
Standard No.	GB/T 4326-2006
Status	valid
Language	English
File Format	PDF
Word Count	7000 words
Price(USD)	210.0
Implemented on	2006-11-1
Delivery	via email in 1~3 business day

Detail of GB/T 4326-2006

Standard No.

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Professional Classification

ICS Classification

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Introduction of GB/T 4326-2006

本标准规定的测量方法适用于非本征半导体单晶材料的霍尔系数、载流子霍尔迁移率、电阻率和载流子浓度。本标准规定的测量方法仅在有限的范围内对锗、硅、砷化镓单晶材料进行了实验室测量，但该方法也可适用于其他半导体单晶材料，一般情况下，适用于室温电阻率高达104Ω·cm

Contents of GB/T 4326-2006

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Keywords:
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