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Position: Chinese Standard in English/GB/T 6217-1998
GB/T 6217-1998   Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification (English Version)
Standard No.: GB/T 6217-1998 Status:valid remind me the status change
Language:English File Format:PDF
Word Count: 7000 words Price(USD):210.00 remind me the price change
Implemented on:1999-6-1 Delivery: via email in 1~3 business day
Standard No.: GB/T 6217-1998
English Name: Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
Chinese Name: 半导体器件 分立器件 第7部分:双极型晶体管 第一篇 高低频放大环境额定的双极型晶体管空白详细规范
Chinese Classification: L42    Semiconductor triode
Professional Classification: GB    National Standard
ICS Classification: 31.080.30 31.080.30    Transistors 31.080.30
Issued by: CSBTS
Issued on: 1998-1-1
Implemented on: 1999-6-1
Status: valid
Superseding:GB/T 6217-1986 Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
GB 6217-1986 Blank detail specfication for ambient-Rated bipolar transistors for low and high frequency amplification (Applicable for certification)
Language: English
File Format: PDF
Word Count: 7000 words
Price(USD): 210.00
Delivery: via email in 1~3 business day
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