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Position: Chinese Standard in English/GB/T 6217-1998 |
GB/T 6217-1998 Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification (English Version) | |||
Standard No.: | GB/T 6217-1998 | Status: | valid remind me the status change |
Language: | English | File Format: | |
Word Count: | 7000 words | Price(USD): | 210.00 remind me the price change |
Implemented on: | 1999-6-1 | Delivery: | via email in 1~3 business day |
Standard No.: | GB/T 6217-1998 |
English Name: | Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification |
Chinese Name: | 半导体器件 分立器件 第7部分:双极型晶体管 第一篇 高低频放大环境额定的双极型晶体管空白详细规范 |
Chinese Classification: | L42 Semiconductor triode |
Professional Classification: | GB National Standard |
ICS Classification: | 31.080.30 Transistors |
Issued by: | CSBTS |
Issued on: | 1998-1-1 |
Implemented on: | 1999-6-1 |
Status: | valid |
Superseding: | GB/T 6217-1986 Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification GB 6217-1986 Blank detail specfication for ambient-Rated bipolar transistors for low and high frequency amplification (Applicable for certification) |
Language: | English |
File Format: | |
Word Count: | 7000 words |
Price(USD): | 210.00 |
Delivery: | via email in 1~3 business day |
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Keywords: | ||
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