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| Position: Chinese Standard in English/GB/T 6219-1998 |
| GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz (English Version) | |||
| Standard No.: | GB/T 6219-1998 | Status: | valid remind me the status change |
| Language: | English | File Format: | |
| Word Count: | 7000 words | Price(USD): | 210.0 remind me the price change |
| Implemented on: | 1999-6-1 | Delivery: | via email in 1~3 business day |
| Standard No.: | GB/T 6219-1998 |
| English Name: | Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz |
| Chinese Name: | 半导体器件 分立器件 第8部分:场效应晶体管 第一篇 １GHｚ、５W以下的单栅场效应晶体管空白详细规范 |
| Chinese Classification: | L42 Semiconductor triode |
| Professional Classification: | GB National Standard |
| ICS Classification: | 31.080.30 Transistors |
| Issued by: | CBTS |
| Issued on: | 1998-1-1 |
| Implemented on: | 1999-6-1 |
| Status: | valid |
| Superseding: | GB/T 6219-1986 Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz GB 6219-1986 Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz (Applicable for certification) |
| Language: | English |
| File Format: | |
| Word Count: | 7000 words |
| Price(USD): | 210.0 |
| Delivery: | via email in 1~3 business day |