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| Position: Chinese Standard in English/GB/T 6616-1995 |
| GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage (English Version) | |||
| Standard No.: | GB/T 6616-1995 | Status: | superseded remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 3000 words | Translation Price(USD): | 260.0 remind me the price change |
| Implemented on: | 1995-1-2 | Delivery: | via email in 1~3 business day |
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| Standard No.: | GB/T 6616-1995 |
| English Name: | Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage |
| Chinese Name: | 半导体硅片电阻率及硅薄膜薄层电阻测定 非接触涡流法 |
| Chinese Classification: | H21 Metal physical property test method |
| Professional Classification: | GB National Standard |
| Source Content Issued by: | China State Bureau of Technical Supervision |
| Issued on: | 1995-04-18 |
| Implemented on: | 1995-1-2 |
| Status: | superseded |
| Superseded by: | GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge |
| Superseded on: | 2010-6-1 |
| Superseding: | GB 6616-1986 Standard method for measuring resistivity of silicon slices by noncontacting technique |
| Target Language: | English |
| File Format: | |
| Word Count: | 3000 words |
| Translation Price(USD): | 260.0 |
| Delivery: | via email in 1~3 business day |