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Position: Chinese Standard in English/GB/T 6617-1995
GB/T 6617-1995   Test method for measuring resistivity of silicon wafers using spreading resistance probe (English Version)
Standard No.: GB/T 6617-1995 Status:superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 3500 words Translation Price(USD):300.0 remind me the price change

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Implemented on:1995-1-2 Delivery: via email in 1~3 business day

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,2010-6-1,1995-1-2,98DF42E0557A41F91513905432611
Standard No.: GB/T 6617-1995
English Name: Test method for measuring resistivity of silicon wafers using spreading resistance probe
Chinese Name: 硅片电阻率测定 扩展电阻探针法
Chinese Classification: H21    Metal physical property test method
Professional Classification: GB    National Standard
Source Content Issued by: SBTS
Issued on: 1995-04-18
Implemented on: 1995-1-2
Status: superseded
Superseded by:GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe
Superseded on:2010-6-1
Superseding:GB 6617-1986 Standard method for measuring resistivity of silicon wafers using spreading resistance probe
Target Language: English
File Format: PDF
Word Count: 3500 words
Translation Price(USD): 300.0
Delivery: via email in 1~3 business day
本标准规定了硅片电阻率的扩展电阻探针测量方法。本标准适用于测量晶体取向与导电类型已知的硅片的电阻率和测量与衬底同型或反型的硅外延层的电阻率。测量范围:10-3~102Ω・cm。
Code of China
Standard
GB/T 6617-1995  Test method for measuring resistivity of silicon wafers using spreading resistance probe (English Version)
Standard No.GB/T 6617-1995
Statussuperseded
LanguageEnglish
File FormatPDF
Word Count3500 words
Price(USD)300.0
Implemented on1995-1-2
Deliveryvia email in 1~3 business day
Detail of GB/T 6617-1995
Standard No.
GB/T 6617-1995
English Name
Test method for measuring resistivity of silicon wafers using spreading resistance probe
Chinese Name
硅片电阻率测定 扩展电阻探针法
Chinese Classification
H21
Professional Classification
GB
ICS Classification
Issued by
SBTS
Issued on
1995-04-18
Implemented on
1995-1-2
Status
superseded
Superseded by
GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe
Superseded on
2010-6-1
Abolished on
Superseding
GB 6617-1986 Standard method for measuring resistivity of silicon wafers using spreading resistance probe
Language
English
File Format
PDF
Word Count
3500 words
Price(USD)
300.0
Keywords
GB/T 6617-1995, GB 6617-1995, GBT 6617-1995, GB/T6617-1995, GB/T 6617, GB/T6617, GB6617-1995, GB 6617, GB6617, GBT6617-1995, GBT 6617, GBT6617
Introduction of GB/T 6617-1995
本标准规定了硅片电阻率的扩展电阻探针测量方法。本标准适用于测量晶体取向与导电类型已知的硅片的电阻率和测量与衬底同型或反型的硅外延层的电阻率。测量范围:10-3~102Ω・cm。
Contents of GB/T 6617-1995
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Keywords:
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