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Position: Chinese Standard in English/GB/T 6617-2009
GB/T 6617-2009   Test method for measuring resistivity of silicon wafer using spreading resistance probe (English Version)
Standard No.: GB/T 6617-2009 Status:valid remind me the status change

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Target Language:English File Format:PDF
Word Count: 6000 words Translation Price(USD):150.0 remind me the price change

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Implemented on:2010-6-1 Delivery: via email in 1~3 business day

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Standard No.: GB/T 6617-2009
English Name: Test method for measuring resistivity of silicon wafer using spreading resistance probe
Chinese Name: 硅片电阻率测定 扩展电阻探针法
Chinese Classification: H80    Semimetal and semiconductor material in general
Professional Classification: GB    National Standard
ICS Classification: 29.045 29.045    Semiconducting materials 29.045
Source Content Issued by: AQSIQ; SAC
Issued on: 2009-10-30
Implemented on: 2010-6-1
Status: valid
Superseding:GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe
Target Language: English
File Format: PDF
Word Count: 6000 words
Translation Price(USD): 150.0
Delivery: via email in 1~3 business day
本标准规定了硅片电阻率的扩展电阻探针测量方法。
本标准适用于测量晶体晶向与导电类型已知的硅片的电阻率和测量衬底同型或反型的硅片外延层的电阻率,测量范围:10-3 Ω·cm~102 Ω·cm。
Code of China
Standard
GB/T 6617-2009  Test method for measuring resistivity of silicon wafer using spreading resistance probe (English Version)
Standard No.GB/T 6617-2009
Statusvalid
LanguageEnglish
File FormatPDF
Word Count6000 words
Price(USD)150.0
Implemented on2010-6-1
Deliveryvia email in 1~3 business day
Detail of GB/T 6617-2009
Standard No.
GB/T 6617-2009
English Name
Test method for measuring resistivity of silicon wafer using spreading resistance probe
Chinese Name
硅片电阻率测定 扩展电阻探针法
Chinese Classification
H80
Professional Classification
GB
ICS Classification
Issued by
AQSIQ; SAC
Issued on
2009-10-30
Implemented on
2010-6-1
Status
valid
Superseded by
Superseded on
Abolished on
Superseding
GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe
Language
English
File Format
PDF
Word Count
6000 words
Price(USD)
150.0
Keywords
GB/T 6617-2009, GB 6617-2009, GBT 6617-2009, GB/T6617-2009, GB/T 6617, GB/T6617, GB6617-2009, GB 6617, GB6617, GBT6617-2009, GBT 6617, GBT6617
Introduction of GB/T 6617-2009
本标准规定了硅片电阻率的扩展电阻探针测量方法。
本标准适用于测量晶体晶向与导电类型已知的硅片的电阻率和测量衬底同型或反型的硅片外延层的电阻率,测量范围:10-3 Ω·cm~102 Ω·cm。
Contents of GB/T 6617-2009
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Keywords:
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