SJ/T 11226-2000 English Version, SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor (English Version)

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SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor (English Version)
Standard No.:	SJ/T 11226-2000	Status:	valid remind me the status change Email:
Language:	English	File Format:	PDF
Word Count:	5000 words	Price(USD):	150.0 remind me the price change Email:
Implemented on:	2000-10-1	Delivery:	via email in 1~3 business day

Standard No.:	SJ/T 11226-2000
English Name:	Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor
Chinese Name:	电子元器件详细规范 3DA505型L波段硅脉冲功率晶体管
Chinese Classification:	L42 Semiconductor triode
Professional Classification:	SJ Professional Standard - Electronics
ICS Classification:	31.080.30 31.080.30 Transistors 31.080.30
Issued by:	MIIT
Issued on:	2000-8-16
Implemented on:	2000-10-1
Status:	valid
Language:	English
File Format:	PDF
Word Count:	5000 words
Price(USD):	150.0
Delivery:	via email in 1~3 business day

Standard

SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor (English Version)
Standard No.	SJ/T 11226-2000
Status	valid
Language	English
File Format	PDF
Word Count	5000 words
Price(USD)	150.0
Implemented on	2000-10-1
Delivery	via email in 1~3 business day

Detail of SJ/T 11226-2000

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Introduction of SJ/T 11226-2000

本规范适用于3DA505型L波段硅脉冲功率晶体管，它是按照GB/T 7576-1998《半导体器件分立器件第7部分双极型晶体管第四篇高频放大管壳额定双极型晶体管空白详细规范》标准制订的，符合GB/T 4589.1-1989《半导体器件分立器件和集成电路总规范》和GB/T 12560-1999《半导体器件分立器件分规范》的II类要求。本规范引用的标准有GB/T 4587-1994《半导体分立器件和集成电路第7部分双极型晶体管》、GB/T 4589.1-1989《半导体器件分立器件和集成电路总规范》、GB/T 4937-1995《半导体器件机械和气候试验方法》和GJB 128A-97《半导体分立器件试验方法》。

Contents of SJ/T 11226-2000

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