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Title Standard No. Implemented On
General requirements for press-pack insulate gate bipolar transistors (IGBT) for flexible transmissionT/CEC 155-20182018-4-1
Semiconductor devices — Part 6: ThyristorsGB/T 15291-20152017-1-1
General requirements for light-trigged thyristors for HVDC transmissionGB/T 21420-20082008-9-1
General requirements for thyristors for HVDC transmissionGB/T 20992-20072008-2-1
Semiconductor devices discrete devices blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A GB/T 13150-20052005-10-1
Semiconductor devices - Discrete devices - Part 6: thyristors - Section three - Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents GB/T 13151-20052005-10-1
Semiconductor devices -Discrete devices -Part 6:Thyristors- Section Two-Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated,up to 100AGB/T 6590-19981999-6-1
Semiconductor devices Discrete devices Part 6:Thyristors-Section One--Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100AGB/T 6352-19981999-6-1
Measuring methods for thyristor - Gate turn-off thyristorGB/T 15293-19941995-10-1
Semiconductor devices Part 6 ThyristorsGB/T 15291-19941995-10-1
Measuring methods for thyristor Reverse conducting triode thyristorGB/T 15292-19941995-10-1
Blank detail specification for reverse blocking triode thyristors, ambient or case-rated, above 100AGB 13151-19911992-5-1
Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100AGB/T 13150-19911992-5-1
Blank detail specification for gate turn-off thyristors, ambient or case-rated, 5A and aboveGB/T 13153-19911992-5-1
Blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5A/5A and above GB/T 13152-19911992-5-1
Blank detail specification for unijunction transistorsGB/T 13066-19911992-3-1
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