| Title |
Standard No. |
Implemented On |
| Residential and commercial water treatment equipment | T/NHAIA 004-2016 | |
| Assessment guidelines for the ability of exhibition construction enterprise | GB/T 37073-2018 | 2019-7-1 |
| Information description of product for electronic commerce transaction—Coal | GB/T 36603-2018 | 2019-4-1 |
| Rating requirements for knowledge diffusion competence of innovation method | GB/T 37098-2018 | 2018-12-28 |
| Electric power enterprise standardization—Evaluation and improvement | T/CEC 181-2018 | 2018-9-1 |
| Enterprise standardization—Evaluation and improvement | GB/T 19273-2017 | 2018-7-1 |
| Evaluation system of industrialization for scientific and technical achievement | T/CSPSTC 3-2017 | 2018-2-1 |
| Transformation guidelines of geographical names from foreign languages into Chinese―Part 9:Persian | GB/T 17693.9-2017 | 2017-12-29 |
| Evaluation systems for enterprise innovation influence | T/CSPSTC 1-2017 | 2017-12-15 |
| Evaluation systems for industrial park innovation influence | T/CSPSTC 2-2017 | 2017-12-15 |
| Specification for inspecting exit cultural relics--Part 14：Lacquerware | GB/T 33290.14-2016 | 2017-7-1 |
| Corrosion control engineering life cycle--General requirements | GB/T 33314-2016 | 2017-7-1 |
| Specification for inspecting exit cultural relics--Part 12: Clock and watch | GB/T 33290.12-2016 | 2017-7-1 |
| Specification for inspecting exit cultural relics--Part 4: Instruments | GB/T 33290.4-2016 | 2017-7-1 |
| Specification for inspecting exit cultural relics--Part 13: Weapon | GB/T 33290.13-2016 | 2017-7-1 |
| Specification for inspecting exit cultural relics--Part 15: Musical instrument | GB/T 33290.15-2016 | 2017-7-1 |
| Specification for inspecting exit cultural relics--Part 5: Ceremonial article | GB/T 33290.5-2016 | 2017-7-1 |
| Specification for inspecting exit cultural relics--Part 16: Writing brush, ink stick, paper and inkstone | GB/T 33290.16-2016 | 2017-7-1 |
| Specification for inspecting exit cultural relics--Part 17: Snuff bottle and fan | GB/T 33290.17-2016 | 2017-7-1 |
| Specification for welfare-lottery-system-document test | MZ/T 081-2017 | 2017-1-6 |
| Specification for welfare-lottery-game-rules test | MZ/T 077-2017 | 2017-1-6 |
| Specification for welfare-lottery-system-software test | MZ/T 079-2017 | 2017-1-6 |
| Specification for welfare-lottery-game-rules conformity-testing | MZ/T 078-2017 | 2017-1-6 |
| Specification for welfare-lottery-system-software security-testing | MZ/T 080-2017 | 2017-1-6 |
| Regulation on compiling construction standard for land consolidation and rehabilitation engineering | TD/T 1045-2016 | 2016-8-1 |
| Industry water-use quota | DB21/T 1237-2015 | 2015-7-18 |
| Rating specification for applied competence of innovation method | GB/T 31769-2015 | 2015-7-1 |
| Mobile laboratory―Guidance on ergonomic principles | GB/T 31019-2014 | 2015-2-1 |
| Mobile laboratory―Modular design guide | GB/T 31018-2014 | 2015-2-1 |
| Requirement on Services of Dangerous Goods Transportation for International Freight Forwarders | GB/T 30347-2013 | 2014-7-1 |
| Norms of Credit Management on International Logistics Enterprises | GB/T 30345-2013 | 2014-7-1 |
| Requirement on Services of International Exhibit Transportation | GB/T 30348-2013 | 2014-7-1 |
| Specification for the structure of E-CO | SB/T 11006-2013 | 2013-11-1 |
| Design principles and basic requirements for mobile laboratory | GB/T 29475-2012 | 2013-7-31 |
| Evaluating guide for raw material saving of industrial enterprises | GB/T 29115-2012 | 2013-6-1 |
| General principles for calculation of raw material consumption in industrial enterprises | GB/T 29116-2012 | 2013-6-1 |
| Requirments on services of preparation for international freight forwarding documents | GB/T 28832-2012 | 2012-12-1 |
| Credit evaluating index elements for international logistics enterprises | GB/T 28836-2012 | 2012-12-1 |
| Valuation standard for ready-mixed mortar and equipment enterprises | SB/T 10723-2012 | 2012-11-1 |
| Quality management specification of dry-mixed mortar | SB/T 10647-2011 | 2012-1-1 |
| Chinese restaurant kitchen management regulations in the catering industry | DB31/T 526-2011 | 2011-11-1 |
| Rehabilitation service information guidelines for the old and individuals with disabilities | GB/T 24433-2009 | 2009-12-1 |
| Project management - Areas of knowledge | GB/Z 23693-2009 | 2009-10-1 |
| Code for technology of bulk cement deliver goods station of country | SB/T 10516-2008 | 2009-8-1 |
| Requirement on services of international freight forwarders | GB/T 22154-2008 | 2008-12-1 |
| General specification for the logistics center operation | GB/T 22126-2008 | 2008-12-1 |
| International freight forwarders trading conditions | GB/T 22153-2008 | 2008-12-1 |
| Qualifications and evaluation indicators for international freight forwarding enterprises | GB/T 22155-2008 | 2008-12-1 |
| Logistics quantitative forecast | WB/T 1039-2008 | 2008-12-1 |
| Basic technical condition of cotton processing enterprise | GB/T 18353-2001 | 2001-6-1 |
| Guidelines for complaints handling | GB/T 17242-1998 | 1998-10-1 |
| Solder wire for soldering cleanout-free | SJ/T 11168-1998 | 1998-5-1 |
| General specification for surface mounting adhesives | SJ/T 11187-1998 | 1998-5-1 |
| Encapsulation materials of phenolic series for use in electronic components | SJ/T 11126-1997 | 1998-1-1 |
| Encapsulation materials of epoxy series for use in electronic components | SJ/T 11125-1997 | 1998-1-1 |
| Zirconium dioxide used for electronic ceramics | SJ/T 11136-1997 | 1998-1-1 |
| Management system for design documents Part 5: Revisions of design documents | SJ/T 211.5-1997 | 1998-1-1 |
| Determination of Co2O3 NiO and MnO2 in electronic glass - Atomic absorption method | SJ/T 10897-1996 | 1997-1-1 |
| Test method for gold,silver and their alloy brazing for electronic devices-Test method for spittering | SJ/T 10755-1996 | 1997-1-1 |
| Analytical methods for silver copper brazing for electron device Determination of lead by atomic absorption spectrophotometry | SJ/T 11025-1996 | 1997-1-1 |
| Test method for chromium film and photoresist thickness of chrome blanks | SJ/T 10859-1996 | 1997-1-1 |
| Methods of analysis for silver-copper brazing for electronic devices - Determination of bismuth (spectrophotometric-atomic absorption method) | SJ/T 11023-1996 | 1997-1-1 |
| Test method for annealing point and strain point of electronic glass | SJ/T 11039-1996 | 1997-1-1 |
| Method of analysis for pure silver brazing for electronic devices - Determination of magnesium and zinc (spectrophotometric-atomic absorption method) | SJ/T 11012-1996 | 1997-1-1 |
| Determination of arsenic (As2O3) in electronic glass | SJ/T 10900-1996 | 1997-1-1 |
| prepreg for use as bonding sheet material in the fabrication of multilayer printed boards | SJ/T 11050-1996 | 1997-1-1 |
| Tungsten heater element | SJ/T 11063-1996 | 1997-1-1 |
| Preparation of outline drawings of cathode-ray tubes | SJ/T 11081-1996 | 1997-1-1 |
| Test method for softening point of electronic glass | SJ/T 11038-1996 | 1997-1-1 |
| Methods of analysis for gold-copper brazing for electronic devices - Determination of copper (Volumetric - EDTA method) | SJ/T 11028-1996 | 1997-1-1 |
| Test method for d.c. disruptive strength of electronic glass | SJ/T 11034-1996 | 1997-1-1 |
| Stranded tungsten wire | SJ/T 11062-1996 | 1997-1-1 |
| Determination of lead oxide in electronic glass - Extraction/EDTA complexometric titration method | SJ/T 10905-1996 | 1997-1-1 |
| Dumet wire | SJ/T 11064-1996 | 1997-1-1 |
| Test method for high frequency dielectric losses and permittivity of electronic glass | SJ/T 11043-1996 | 1997-1-1 |
| Type designation system for glass used in electronic applications | SJ/T 10794-1996 | 1997-1-1 |
| Methods of measurement for camera tube yoke assemblies | SJ/T 10918-1996 | 1997-1-1 |
| Methods of analysis for pure silver drazing fro electronic devices - Determination of phosphorus (spectrophotometric phosphomolybdate method) | SJ/T 11017-1996 | 1997-1-1 |
| Test methods of VSWR of the waveguide feed-system for marine radar | SJ/T 11098-1996 | 1997-1-1 |
| Measurements of electrical properties of disk-seal tubes-Methods of measurement resonator unloaded Q | SJ/T 10867-1996 | 1997-1-1 |
| Determination of zirconia in electronic glass | SJ/T 10899-1996 | 1997-1-1 |
| Methods of analysis for pure silver brazing for electronic devices-Determination of sulfur (iodimetric combustion method) | SJ/T 11018-1996 | 1997-1-1 |
| Potassium silicate solution for use in electronic industry - Methods of calculation of concentration and modulus | SJ/T 10925-1996 | 1997-1-1 |
| Measurements of electrical properties of disk-seal tubes - Methods of measurement for the frequency response characteristic | SJ/T 10865-1996 | 1997-1-1 |
| Methods of analysis for gold-copper and gold-nickel brazing for electronic devices-Determination of zinc (spectrophotometric atomic absorption method) | SJ/T 11032-1996 | 1997-1-1 |
| Terms for glass used in electronic applications | SJ/T 10793-1996 | 1997-1-1 |
| Methods of analysis for pure silver brazing for electronic devices - Determination of bismuth (spectrophotometric strychnine-potasssium iodide method) | SJ/T 11016-1996 | 1997-1-1 |
| Methods of analysis for silver-copper brazing for electronic devices - Determination of magnesium (spectrophotometric-atomic absorption method) | SJ/T 11027-1996 | 1997-1-1 |
| Determination of Li2O Na20 and K20 in electronic glass - Atomic absorption method | SJ/T 10894-1996 | 1997-1-1 |
| Test method for gold, silver and their alloy brazing for electronic devices - Test method for cleanness | SJ/T 10754-1996 | 1997-1-1 |
| Determination of alumina (Al2O3) and zine oxide (ZnO) in electronic glass - EDTA complexiometric titration method | SJ/T 10908-1996 | 1997-1-1 |
| Measurements of electrical properties of disk-seal tubes - Methods of measurement for AM - PM conversion coefficient | SJ/T 10870-1996 | 1997-1-1 |
| Potassium silicate solution for use in electronic industry - Methods of determination of nickel | SJ/T 10928-1996 | 1997-1-1 |
| Determination of boron oxide(B2O3) in electronic glass | SJ/T 10903-1996 | 1997-1-1 |
| Methods of analysis for gold-copper and gold-nickel brazing for elelctronic devices - Determination of phophorus (spectrophotometric method) | SJ/T 11031-1996 | 1997-1-1 |
| Method of measurement for residue stress in color picture tube bulbs | SJ/T 10936-1996 | 1997-1-1 |
| Requirements for camera tube yoke assemblies | SJ/T 10917-1996 | 1997-1-1 |
| Method of analysis for pure silver brazing for electronic devices - Determination of lead (spectrophotometric-dithizone method) | SJ/T 11011-1996 | 1997-1-1 |
| Determination of manganese dioxide in electronic glass - Potassium periodate oxidation method | SJ/T 10901-1996 | 1997-1-1 |
| Potassium silicate solution for use in electronic industry - Methods for determination of chlorite | SJ/T 10930-1996 | 1997-1-1 |
| Methods of analysis for pure silver brazing for electronic devices-Determination of Pb, Bi, Zn, Cd, Fe, Mg, Al, Sn and Sb (spectrochemical method) | SJ/T 11019-1996 | 1997-1-1 |
| Test method for thermal shock of electronic glass | SJ/T 11037-1996 | 1997-1-1 |
| Methods of analysis for pure silver brazing for electronic devices - Determination of iron (spectrophotometric-O-phenanthroline method) | SJ/T 11015-1996 | 1997-1-1 |
| Gold,silver and their alloy brazing for electronic devices | SJ/T 10753-1996 | 1997-1-1 |
| Determination of iron oxide and titania in electronic glass - Photometric method | SJ/T 10898-1996 | 1997-1-1 |
| Test method for chemical stability for water resistance of electronic glass | SJ/T 11035-1996 | 1997-1-1 |
| Designations for names and models of structure ceramic materials for electronic components | SJ/T 10760-1996 | 1997-1-1 |
| Determination of baryta (BaO) in electronic glass-Barium sulfate weight method | SJ/T 10906-1996 | 1997-1-1 |
| Methods of analysis for pure silver brazing for electronic devices - Determination of antimony (spectrophotometric-malichite green method) | SJ/T 11014-1996 | 1997-1-1 |
| Measurement of electrical properties of disk-seal tubes-General | SJ/T 10864-1996 | 1997-1-1 |
| Methods of analysis for silver-copper brazing for electronic devices-Determination of antimony (spectrophotometric-atomic absorption method) | SJ/T 11024-1996 | 1997-1-1 |
| Determination of ZnO PbO Al2O3 and Sb2O3 in electronic glass - Atomic absorption method | SJ/T 10896-1996 | 1997-1-1 |
| General specification for lead-tinned for electronic components | SJ/T 11091-1996 | 1997-1-1 |
| Methods of analysis for gold-copper and gold-nickel brazing for electronic devices-Determination of lead (spectrophotometric dithizone method) | SJ/T 11030-1996 | 1997-1-1 |
| Determination of alumina (A12O3) in electronic glass - EDTA complexicretric titration method | SJ/T 10907-1996 | 1997-1-1 |
| Potassium silicate solution for use in electronic industry - Methods of determination of silica content | SJ/T 10924-1996 | 1997-1-1 |
| General rules for chemical analysis of electronic glass | SJ/T 10893-1996 | 1997-1-1 |
| Test method for viscosity of electronic glass at high temperature | SJ/T 11040-1996 | 1997-1-1 |
| Methods of analysis for silver-copper brazing for electronic devices - Determination of tin (spectrophotometric C21H38BrN absorption method) | SJ/T 11022-1996 | 1997-1-1 |
| Measurements of electrical properties of disk-seal tubes - Methods of measurement for self-neutralization frequency | SJ/T 10868-1996 | 1997-1-1 |
| Test method for density of electronic glass - Sink-float comparator method | SJ/T 11033-1996 | 1997-1-1 |
| Determination of K2O Na2O and Li2O electronic glass - Flame spectroscopy | SJ/T 10909-1996 | 1997-1-1 |
| Potassium silicate solution for use in electronic industry - Methods of determination of copper | SJ/T 10927-1996 | 1997-1-1 |
| Potassium silicate solution for use in electronic industry - Methods for determination of potassium carbonate | SJ/T 10921-1996 | 1997-1-1 |
| Potassium silicate solution for use in electronic industry - Methods of determination of total alkalinity | SJ/T 10923-1996 | 1997-1-1 |
| Methods of analysis for pure silver brazing for electronic devices - Determination of cadmium (spectrophotometric-atomic absorption method) | SJ/T 11013-1996 | 1997-1-1 |
| Test method for optical density of chrome blanks | SJ/T 10861-1996 | 1997-1-1 |
| Potassium silicate solution for use in electronic industry - Methods of determination of iron | SJ/T 10926-1996 | 1997-1-1 |
| Glossary of terms for production of tungsten and molybdenum wires | SJ/T 10744-1996 | 1997-1-1 |
| The properties and the test methods for antistatic silk fabric of synthetic filament in electronic industry | SJ/T 11090-1996 | 1997-1-1 |
| Measurements of electrical properties of disk-seal tubes - Methods of measurement for power gain | SJ/T 10869-1996 | 1997-1-1 |
| Methods of analysis for silver-copper brazing for electronic devices - Determination of Pb, Bi, Zn, Cd, Fe, Mg, Al, Sn and Sb (spectrochemical method) | SJ/T 11021-1996 | 1997-1-1 |
| Detail specification for electronic components - Electronic tube of type FC-306 (Applicable for certification) | SJ/T 11078-1996 | 1997-1-1 |
| Test method for surface reflectivity of chromium film on chrome blanks | SJ/T 10860-1996 | 1997-1-1 |
| Test methods for surface flatness of glass substrate and chromium film | SJ/T 10858-1996 | 1997-1-1 |
| Test method for temperature (Tk-100) of electronic glass with volume resistivity of 100MΩ.cm | SJ/T 11042-1996 | 1997-1-1 |
| Measurements of electrical properties of disk-seal tubes - Methods of measurement for frequency position | SJ/T 10866-1996 | 1997-1-1 |
| Determination of fluorine in electronic glass - Specific ion electrode methods | SJ/T 10904-1996 | 1997-1-1 |
| Determination of silica (SiO2) in electronic glass | SJ/T 10902-1996 | 1997-1-1 |
| Methods of analysis for gold-nickel brazing for electronic devices - Determination of nickel (Volumetric - EDTA method) | SJ/T 11029-1996 | 1997-1-1 |
| Test method for impact resistance of electronic glass | SJ/T 11041-1996 | 1997-1-1 |
| Methods of analysis for silver-copper brazing for electronic devices - Determination of copper (iodimetric method) | SJ/T 11020-1996 | 1997-1-1 |
| Test method for average linear thermal expansion coefficent of electronic glass | SJ/T 11036-1996 | 1997-1-1 |
| Determination of CaO SrO and MgO in electronic glass - Atomic absorption method | SJ/T 10895-1996 | 1997-1-1 |
| Potassium silicate solution for use in electronic industry - General rules of analysis | SJ/T 10922-1996 | 1997-1-1 |
| Methods of analysis for silver-copper brazing for electronic devices - Determination of iron, cadmium and zinc (spectrophotometric-atomic absorption method) | SJ/T 11026-1996 | 1997-1-1 |
| Symbol and notation for brazing, soldering and sealing | SJ/T 10667-1995 | 1996-1-1 |
| General specification for compact fluorescent lamps | SJ/T 10673-1995 | 1996-1-1 |
| Cobalt oxide powder for electronic industry | SJ/T 10676-1995 | 1996-1-1 |
| Nickel oxide powder for electronic industry | SJ/T 10677-1995 | 1996-1-1 |
| Bismuth trioxide powder for electronic industry | SJ/T 10678-1995 | 1996-1-1 |
| Detail specification for electronic components-Fixed low-power non-wirewound fixed resistors - Type RT13 carbon film fixed resistors Assessment level E | SJ/T 10617-1995 | 1995-10-1 |
| Management system for CAD design documents-Signature of design documents | SJ/T 10629.4-1995 | 1995-10-1 |
| Atomic-absorption spectrophotometry of impurties in alumina for electron ceramic raw materials | SJ/T 10633-1995 | 1995-10-1 |
| Technical guides for evaluating the saving on steel products in enterprises | GB/T 15512-1995 | 1995-1-2 |
| SJ 2003 7.2-1994 Detail specification for Type LGB2A0606 fixed inductors | SJ 2003 7.2-1994 | 1994-12-1 |
| Method for measurement of average dislocation density of Aluminium foil for electroytic capacitor | SJ/T 10557.3-1994 | 1994-12-1 |
| Method of emission spectrochemical analysis of impurities in ZrO2 for use in electron ceramics | SJ/T 10553-1994 | 1994-12-1 |
| Tungsten-Thorium alloy rod | SJ/T 10536.2-1994 | 1994-12-1 |
| Detail specification for air dielectric tubular (piston type) trimmer variable capacitors,Model CWG27,CWG28 and CWG29 | SJ 20032/1-1994 | 1994-12-1 |
| Test method for gas emission characteristics of colloidal graphite in vacuum for use in electron tube | SJ/T 10550-1994 | 1994-12-1 |
| Specification for Aluminium foil for electrolytic capacitor | SJ/T 10557.1-1994 | 1994-12-1 |
| Blank detail specification for compact fluorescent lamps | SJ/T 10547-1994 | 1994-12-1 |
| Detail specification for electronic components - Fixed precision, Type RJ74 metal film precision resistors Assessment level E | SJ/T 10572-1994 | 1994-12-1 |
| Detail specification for electronic components-Fixed precision resistors, Type RJ73 metal precision resistors Assessment level E | SJ/T 10571-1994 | 1994-12-1 |
| Blank detail specification for electron gun of black-and white picture tube | SJ/T 10545-1994 | 1994-12-1 |
| Detail specification for electronic components-Fixed precision resistors, Type RJ75 metal film precision resistors Assessment level E | SJ/T 10573-1994 | 1994-12-1 |
| SJ 2003 7.1-1994 Detail specification for Type LGA2A0410 fixed inductors | SJ 2003 7.1-1994 | 1994-12-1 |
| Blank detail specification for panel of colour picture tue bulbs | SJ/T 10548-1994 | 1994-12-1 |
| Method of emission specthochemical analysis of impurities in TiO2 for use in electron ceramics | SJ/T 10552-1994 | 1994-12-1 |
| General specification for particular fluorescent lamps | SJ/T 10546-1994 | 1994-12-1 |
| General specification for colour picture tube bulbs | SJ/T 10543-1994 | 1994-12-1 |
| Blank detail specification for funnel of colour picture tube bulbs | SJ/T 10549-1994 | 1994-12-1 |
| Method of emission spectrochemical analysis of impurities in AL203 for use in electron ceramics | SJ/T 10551-1994 | 1994-12-1 |
| Detail specification for electronic components-Fixed precision resistors,Type RJ76 metal film precision resistors Assessment level E | SJ/T 10574-1994 | 1994-12-1 |
| Exterior collidal graphite for black and white picture tubes | SJ/T 10556-1994 | 1994-12-1 |
| Blank detail specification for colour display tubes | SJ/T 10544-1994 | 1994-12-1 |
| Tungsten-Thorium alloy wires | SJ/T 10536.1-1994 | 1994-12-1 |
| Generic specification for traffic speed measuring redar at zero angle | SJ/T 10443-1993 | 1994-6-1 |
| Test methods for bulk resistivity of organic film for use in capacitors | SJ/T 1146-1993 | 1994-6-1 |
| Test method for breakdown strength of organic film for use in capacitors | SJ/T 1148-1993 | 1994-6-1 |
| Quality control pivot of production for high power ceramic transmitting tubes | SJ/T 10421-1993 | 1994-6-1 |
| Glass powder for passivation packaging for use in semiconductor devices | SJ/T 10424-1993 | 1994-6-1 |
| Generic specification for electron gun of black-and-white picture tubes | SJ/T 10408-1993 | 1994-6-1 |
| Blank detail specification for black-and-white picture tube bulbs | SJ/T 10409-1993 | 1994-6-1 |
| Generic specification for traffic speed measuring radar at one angle | SJ/T 10442-1993 | 1994-6-1 |
| Guidelines of quality engineering control for electronic beam tubes | SJ/T 10467-1993 | 1994-6-1 |
| CAD symbol base for use in electronic products drawings | SJ/T 10385-1993 | 1994-1-1 |
| Filling-in for technological document format | SJ/T 10375-1993 | 1993-12-1 |
| General terms used for technological clocuments | SJ/T 10376-1993 | 1993-12-1 |
| CAD table base for use in electronic products | SJ/T 10378-1993 | 1993-12-1 |
| Organic film paint for black and white picture tubes | SJ/T 10343-1993 | 1993-10-1 |
| SJ 2005 7-1992 Semiconductor discrete device - Detail specification for silicon NPN low power switching transistor of Type 3DK104 | SJ 2005 7-1992 | 1993-5-1 |
| Semiconductor discrete device-Detail specification for silicon NPN high-frequency low power transistor of Type 3DG111 | SJ 20059-1992 | 1993-5-1 |
| Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK101 | SJ 20054-1992 | 1993-5-1 |
| Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK105 | SJ 20058-1992 | 1993-5-1 |
| Semiconductor discrete device-Detail specification for silicon NPN high-frequency low power transistor of Type 3DG120 | SJ 20060-1992 | 1993-5-1 |
| SJ 2005 5-1992 Semiconductor discrete device - Detail specification for silicon NPN low power switching transistor of Type 3DK102 | SJ 2005 5-1992 | 1993-5-1 |
| Ceramic base body for use in metal film fixed resistors | SJ/T 10322-1992 | 1992-12-1 |
| Completeness of technological document | SJ/T 10324-1992 | 1992-12-1 |
| SJ 2005 2-1992 Detail specification for switch, waveguide, electromechanical operated, 1P2T, fail-safe, Model KB-84 | SJ 20052-1992 | 1992-5-1 |
| Methods of measurement for short wave single sideband set | SJ 20043-1992 | 1992-5-1 |
| Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes | SJ 20012-1992 | 1992-5-1 |
| SJ 2002 8-1992 General specification for VHF/FM vehicle radio | SJ 2002 8-1992 | 1992-5-1 |
| SJ 2004 9-1992 Electrization installation requirement for fiber-optical communication equipment of stationary ground | SJ 2004 9-1992 | 1992-5-1 |
| General specification of mechanical and physical design and manufacturing for military electronic equipments | SJ 20053-1992 | 1992-5-1 |
| General specification for VHF/FM vehicle radio | SJ 20028-1992 | 1992-5-1 |
| Safety requirements for short wave single sideband communication equipment | SJ 20044-1992 | 1992-5-1 |
| SJ 2004 6-1992 General specification for portable non - Metallic mine detectors | SJ 2004 6-1992 | 1992-5-1 |
| Rotary solenoid,General specification for | SJ 20038-1992 | 1992-5-1 |
| Generic specification for 4800bit/s wire voice-band modems | SJ 20040-1992 | 1992-5-1 |
| Evaluation method of residual intelligibility for analog-voice scramblers (RIAVS) | SJ 20041-1992 | 1992-5-1 |
| SJ 2003 9-1992 Brushless miniature D.C. blower, General specification for | SJ 2003 9-1992 | 1992-5-1 |
| General specification for air-conduction dynamic and electro magnetic transmitters | SJ 20045-1992 | 1992-5-1 |
| SJ 2002 0-1992 Detail specification for transmitting tube of Type FU100F | SJ 2002 0-1992 | 1992-5-1 |
| Measuring methods of traveling wave tube | SJ 20024-1992 | 1992-5-1 |
| SJ 2001 8-1992 Detail specification for disk-seal tube of Type FM24 | SJ 20018-1992 | 1992-5-1 |
| Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes | SJ 20014-1992 | 1992-5-1 |
| Generic specification for gas snesors of metal-oxide semiconductor | SJ 20025-1992 | 1992-5-1 |
| Detail specification for air dielectric tubular (piston type) trimmer variable capacitor,Model JCWG31 | SJ 20033-1992 | 1992-5-1 |
| Detail specification for air dielectric tubular (piston type) trimmer variable capacitor,Model JCWG32 | SJ 20035-1992 | 1992-5-1 |
| SJ 2004 8-1992 Machinery installation requirement for fiber-optical communication equipment of statuionary ground | SJ 2004 8-1992 | 1992-5-1 |
| Generic specification of vacuum capacitors | SJ 20030-1992 | 1992-5-1 |
| Detail specification for air dielectric tubular (piston type) trimmer variable capacitor,Model JCWG26 | SJ 20034-1992 | 1992-5-1 |
| SJ 2003 7-1992 Coils fixed and variable, radio frequercy, General specification for | SJ 2003 7-1992 | 1992-5-1 |
| General specification for air dielectric vare trimmer variable capacitors | SJ 20031-1992 | 1992-5-1 |
| SJ 2004 0-1992 General specification for 4800bit/s wire voice-band modems | SJ 2004 0-1992 | 1992-5-1 |
| Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes | SJ 20016-1992 | 1992-5-1 |
| Detail specification for MF11 directly heated negatice temperature coefficient thermistor | SJ 20047-1992 | 1992-5-1 |
| Measuring methods for gas sensors of metal oxide semiconductor | SJ 20026-1992 | 1992-5-1 |
| Specification for Barium sodium polassium glass for military electronic devices and components | SJ 20036-1992 | 1992-5-1 |
| SJ 2004 2-1992 Methods of measurement for tropsphering scattering communication equipment | SJ 2004 2-1992 | 1992-5-1 |
| Detail specification for tranmitting tube of Type FU251F | SJ 20022-1992 | 1992-5-1 |
| SJ 2002 1-1992 Detail specification for transmitting tube of Type FU101F | SJ 2002 1-1992 | 1992-5-1 |
| Principles and requirements for preparing diagrams of STANDARD system | GB/T 13016-1991 | 1992-4-1 |
| Detail specification for electronic components-Photo tube of type GD-24 (Applicable for certification) | SJ/T 10248-1991 | 1992-1-1 |
| Methods of determination for density of potassium silicate solution for use in electronic industry | SJ/T 10226-1991 | 1991-12-1 |
| Graphic and Symbol base for electronic products CAD drawing standard architecture part graphic | SJ/T 10224-1991 | 1991-12-1 |
| A-Ceramic for microwave dielectric materials | SJ/T 10246-1991 | 1991-12-1 |
| Graphic base of electronic components graphics of semiconductor discrete device | SJ/T 10149-1991 | 1991-12-1 |
| Key points for manufacture quality control of picture-tubes(black and white picture-tubes) | SJ/T 10220-1991 | 1991-12-1 |
| Microwave ceramic dielectric materials-Alumina ceramic substrates for microwave integrated circuits | SJ/T 10243-1991 | 1991-12-1 |
| Microwave ceramic dielectric materials-Microwave composite dielectric substrate | SJ/T 10245-1991 | 1991-12-1 |
| Methods of determination for viscosity of potassium silicate solution for use in electronic industry | SJ/T 10227-1991 | 1991-12-1 |
| Model 714 Weather radar | SJ/T 10192-1991 | 1991-12-1 |
| Test methods for frequency character of marine radar transmitters | SJ/T 10295-1991 | 1991-12-1 |
| Microwave ceramic dielectric materials-Rutile for microwave dielectric materials | SJ/T 10244-1991 | 1991-12-1 |
| Graphic base of electronic components graphics for resistor capacitor and inductor | SJ/T 10150-1991 | 1991-12-1 |
| Key points for manufacture quality control of thin film resistors | SJ/T 10219-1991 | 1991-12-1 |
| Cadmium sulfide for use in phosphors | SJ/T 10089-1991 | 1991-7-1 |
| Methods of chemical analysis for glass raw materials for colour picture tubes - Methods for chemical analysis of cerium hydrate | SJ/T 10087.6-1991 | 1991-7-1 |
| Methods of chemical analysis for glass raw materials for colour picture tubes - Methods for chemical analysis for arenaceous quartz | SJ/T 10087.1-1991 | 1991-7-1 |
| Test methods for complex permittivity of solid dielectric in microwave frequency band - Method for reentering into gravity | SJ/T 10143-1991 | 1991-7-1 |
| Detail specification for electronic components. Silicon-target vidicon of type SF-1303 | SJ/T 10032-1991 | 1991-7-1 |
| Methods of chemical analysis for glass raw materials for colour pictrue tubes - Methods for chemical analysis of feldspar | SJ/T 10087.3-1991 | 1991-7-1 |
| Detail specification for electronic components Electronic tube of type FU-605 (Applicable for certification) | SJ/T 10036-1991 | 1991-7-1 |
| Methods of chemical analysis for glass raw materials for colour picture tubes - Methods for chemical analysis of Sodium fluorosilicate | SJ/T 10087.7-1991 | 1991-7-1 |
| Zine sulfide for use in phosphors | SJ/T 10088-1991 | 1991-7-1 |
| Hydrogen thyratron,Type ZQM1-325/16 | SJ/T 10033-1991 | 1991-7-1 |
| Methods of chemical analysis for glass raw materials for colour picture tubes-Methods for chemical analysis of dolomite | SJ/T 10087.2-1991 | 1991-7-1 |
| Detail specification for electronic components Electronic tube of type FC-620F (Applicable for certification) | SJ/T 10035-1991 | 1991-7-1 |
| The methods for detemination of ZnS and CdS for use in phosphors | SJ/T 10090-1991 | 1991-7-1 |
| Preparation methods for electrical skeletons--Terminology, classification and preparation principles | SJ/T 10148.1-1991 | 1991-7-1 |
| Terms for cryelectronics | SJ/T 10141-1991 | 1991-7-1 |
| Methods for chemical analysis for glass raw materials for colour picture tubes - Methods for chemical analysis of sodium pyroautimonate | SJ/T 10087.8-1991 | 1991-7-1 |
| Test methods for complex pemittivity of dielectric material in microwave frequency band-Method for terminal open circuit of coaxial feeder | SJ/T 10142-1991 | 1991-7-1 |
| Methods of chemical analysis for glass raw materials for colour picture tubes - Methods for chemical analysis of litharge | SJ/T 10087.5-1991 | 1991-7-1 |
| Terms for superconductor electronics | SJ/T 10140-1991 | 1991-7-1 |
| Methods of chemical analysis for glass raw materials for colour picture tubes - Methods for chemical analysis of limestone | SJ/T 10087.4-1991 | 1991-7-1 |
| Completeness,preparation and revision of design documents for household electronic products | SJ 2907-1987 | 1989-5-1 |
| Copper-plated Iron wire and Nickel-plated Iron wire for vacuum divices | SJ 3269-1989 | 1989-3-25 |
| Determination of Lead in high purity arenaceous quartz | SJ 3228.10-1989 | 1989-3-25 |
| General specification for packaging materials for use in electronic components | SJ 3262-1989 | 1989-3-25 |
| Methods of measurement for chromium concentration in semi-insulation Gallium arsenide by infra-red absorpti | SJ 3249.3-1989 | 1989-3-25 |
| Determination of Chromium in high purity arenaceous quartz | SJ 3228.7-1989 | 1989-3-25 |
| Specification for high purty arenaceous quartz for use in electronic industry | SJ 3228.1-1989 | 1989-3-25 |
| Supports and glass bar of electron gun for vacuum electronic devices | SJ 3233-1989 | 1989-3-25 |
| Ribbon getter made of Zirconium and Aluminium | SJ 3235-1989 | 1989-3-25 |
| Determination of loss on ignition in high purity arenaceous quartz | SJ 3228.3-1989 | 1989-3-25 |
| Test method for dynamic relating to vacuum gas emission properties of electronic material | SJ 3234-1989 | 1989-3-25 |
| Ribbons of Nickel-coated Iron for use in vacuum tubes | SJ 3267-1989 | 1989-3-25 |
| Gallium arsenide epitaxy wafers | SJ 3242-1989 | 1989-3-25 |
| Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias | SJ 3244.5-1989 | 1989-3-25 |
| Determination of Copper in high purity arenaceous quartz | SJ 3228.6-1989 | 1989-3-25 |
| Determination of Iron in high purity arenaceous quartz | SJ 3228.5-1989 | 1989-3-25 |
| General requirements of inspection procedures for preparation of measuring equipment in electronic industry | SJ 3253-1989 | 1989-3-25 |
| General rules for methods of analysis for high purity arenaceous quartz | SJ 3228.2-1989 | 1989-3-25 |
| General requirement for gas chromatography analysis method | SJ 3239-1989 | 1989-3-25 |
| Double side Aluminium-plated Iron strips and Nickel-Iron-Aluminium alloy strips | SJ 3268-1989 | 1989-3-25 |
| Determination of silicon oxide in high purity arenaceous quartz | SJ 3228.4-1989 | 1989-3-25 |
| Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection | SJ 3248-1989 | 1989-3-25 |
| Determination of Alumiuium in high purity arenacous quartz | SJ 3228.8-1989 | 1989-3-25 |
| Test methods for power function of electronic matericals | SJ 3195-1989 | 1989-3-1 |
| General specification for antennas pedestal of shipborne radar | SJ 3219-1989 | 1989-3-1 |
| General specification for receiving system of ground radar | SJ 3218-1989 | 1989-3-1 |
| Terms related to radar countermeasures | SJ 3207-1989 | 1989-3-1 |
| Graphic base of electronic elements - IC Graphic | SJ 3181-1989 | 1989-3-1 |
| TP abrasive for colour and black-and-white picture tubes | SJ 3119-1988 | 1988-12-1 |
| Wafer holder | SJ 3118-1988 | 1988-12-1 |
| Detail specification for electronic components - Fixed power resistors - Fixed wirewound resistors for Type RXG5 Assessment level E | SJ 2862-1988 | 1988-10-1 |
| Detail specification for electronic components - Fixed low-power non-wirewound resistors - Fixed vitreous enamel resistors for Type RI40 Assessment level E | SJ 2867-1988 | 1988-10-1 |
| Detail specificatioin for electronic components-Fixed power resistors-Fixed wirewound resistors for Type RXG6 Assessment level E | SJ 2863-1988 | 1988-10-1 |
| Detail specification for electronic components - Fixed power resistors - Fixed wirewound resistors for Type RXG7 Assessment level E | SJ 2864-1988 | 1988-10-1 |
| Detail specification for electronic components-Fixed low-power non-wirewound resistors-Metal film resistors for Type RJ20 Assessment level E | SJ 2868-1988 | 1988-10-1 |
| Sockets for colour picture tubes,Type GZS8-6-2 | SJ 3160-1988 | 1988-10-1 |
| Detail specification for electronic components - Fixed power resistors - Fixed wirewound resistors for Type RXG2 Assessment level E | SJ 2859-1988 | 1988-10-1 |
| Sockets for colour picture tubes, Type GZS10-3-1 | SJ 3163-1988 | 1988-10-1 |
| Detail specification for electronic components-Fixed low-power non-wirewound resistors-Ceramic package fuse resistors for Type RF11 Assessment level E | SJ 2866-1988 | 1988-10-1 |
| Sockets for colour picture tubes,Type GZS12-4-4 | SJ 3167-1988 | 1988-10-1 |
| Sockets for colour picture tubes,Type GZS12-4-1 | SJ 3164-1988 | 1988-10-1 |
| Detail specification for electronic components - Fixed low-power non-wirewound resistors - Coating fuse resistors for Type RF10 Assessment level E | SJ 2865-1988 | 1988-10-1 |
| Sockets for colour picture tubes,Type GZS12-4-3 | SJ 3166-1988 | 1988-10-1 |
| Detail specification for electronic components-Fixed power resistors-Fixed wirewound resistors for Type RXG4 Assessment level E | SJ 2861-1988 | 1988-10-1 |
| Detail specification for electronic components - Fixed power resistors - Fixed wirewound resistors for Type RXG3 | SJ 2860-1988 | 1988-10-1 |
| Tests for flammability of plastic materials used for parts and components in electric devices and equipment | SJ/Z 9132-1987 | 1988-1-5 |
| Provision and requirements for preparation and revision of technical standards for electronic industry-Procedures for review of standards drafs by correspondence | SJ 1.5-1987 | 1988-1-1 |
| Requirements for complete documents and related materials when standards drafts submitted for approval | SJ 1.7-1987 | 1988-1-1 |
| Provision and requirements for preparation and revision of technical standards for electronic industry-Requirements for contents of submitted reports concerning draft standards | SJ 1.11-1987 | 1988-1-1 |
| Requirements for review of draft standards by technical committees for professional standardization | SJ 1.12-1987 | 1988-1-1 |
| Provision and requirements for preparation and revision of technical standards for electronic industry-Principles and procedures for regulation of standards-preparation plans | SJ 1.2-1987 | 1988-1-1 |
| Principles and procedures for return of submitted standards drafts for approval | SJ 1.9-1987 | 1988-1-1 |
| Development of responsibilities for lead units responsible for technical standards preparation in electronic industry | SJ 1.3-1987 | 1988-1-1 |
| Provision and requirements for preparation and revision of technical standards for electronic industry-Requirements that should be followed during standards-writing | SJ 1.8-1987 | 1988-1-1 |
| Provision and requirements for preparation and revision of technical standards for electronic industry - Main contents of minutes made at meetings for reviewing draft standards | SJ 1.10-1987 | 1988-1-1 |
| Procedures and provision for submission and approval of technical standards in electronic industry | SJ 1.6-1987 | 1988-1-1 |
| Major procedures and requirements for working out of annual plans relating to technical standards in electronic industry | SJ 1.1-1987 | 1988-1-1 |
| Stages - Division and requirements for implementation of standards-preparation in electronic industry | SJ 1.4-1987 | 1988-1-1 |
| Method of analysis for overall activation process of non-evaporable getrters (catmasphere method) | SJ/Z 2782-1987 | 1987-12-31 |
| Nickel and Nickel alloy bars for vacuum tubes | SJ 1539-1987 | 1987-12-1 |
| Method for chemical analysis of Nickel and Nickel alloy for vacuum tubes | SJ 1542-1987 | 1987-12-1 |
| Method for spectral analysis of Nickel and Nickel aloy for vacuum tubes | SJ 1543-1988 | 1987-12-1 |
| Nickel and Nickel alloy strips for vacuum tubes | SJ 1541-1987 | 1987-12-1 |
| Nickel and Nickel alloy wires for use in vacuum devices | SJ 1540-1987 | 1987-12-1 |
| Compositions of Nickel and Nickel alloy for vacuum tubes | SJ 1538-1987 | 1987-12-1 |
| Guide for the choice of colour to be used for the marking of capacitors and resistors | SJ/Z 9022.1-1987 | 1987-10-12 |
| Attached documents for radar products | SJ 2785-1987 | 1987-10-1 |
| Detail specification for electronic components-Fixed power resistors-Fixed wirewound power resistors for Type RXG1 Assessment level E | SJ 2746-1987 | 1987-10-1 |
| Character styles and symbols for electronic products | SJ 2715-1986 | 1987-10-1 |
| Measurements of electrical properties of electronic tubes - Part 14: Methods of measurement of radar and osciloscope cathode-ray tubes | SJ/Z 9010.14-1987 | 1987-9-14 |
| Measurements of electrical properties of electronic tubes - Part 24: Methods of measurement for cathode-ray charge-storage tubes | SJ/Z 9010.24-1987 | 1987-9-14 |
| Methods for measurement of direct interelectrode capacitances of electronic tubes and valves | SJ/Z 9009-1987 | 1987-9-14 |
| Measurement of electrical properties of microwave tubes - Part 2: General measurements | SJ/Z 9008.2-1987 | 1987-9-14 |
| Measurements of incidental ionizing radation from electronic tubes | SJ/Z 9013-1987 | 1987-9-14 |
| Measurement of electrical properties of microwave tubes--Part 7: Gas-filled microwave switching devices | SJ/Z 9008.6-1987 | 1987-9-14 |
| Measurements of electrical properties of electronic tubes and valves--Part 20: Methods of measurement for thyratron pulse modulators | SJ/Z 9010.20-1987 | 1987-9-14 |
| Measurements of electrical properties of electronic tubes and valves--Part 15: Methods of measurement for spurious and unwanted electrode currents | SJ/Z 9010.15-1987 | 1987-9-14 |
| Measurement of electrical properties of electronic tubes Part 26 Methods of measurement for camera tubes | SJ/Z 9010.26-1987 | 1987-9-14 |
| Measurements of electrical properties of electronic tubes and valves - Part 21: Methods of measurement for cross-modulation in electronic tubes and valves | SJ/Z 9010.21-1987 | 1987-9-14 |
| Measurements of electrical properties of electronic tubes and valves--Part 9: Methods of measuring the cathode-interface impedance | SJ/Z 9010.9-1987 | 1987-9-14 |
| Measurement of electrical properties of microwave tubes - Part 4: Magnetrons | SJ/Z 9008.3-1987 | 1987-9-14 |
| Measurements of electrical properties of electronic tubes and valves--Part 17: Methods of measurement for gasfilled tubes and valves | SJ/Z 9010.17-1987 | 1987-9-14 |
| Measurement of electrical properties of microwave tubes - Part 9: Crossed-field amlifier tubes | SJ/Z 9008.8-1987 | 1987-9-14 |
| Mechanical standardization of semiconductor devices - Part 1: Preparation of drawings of semiconductor devices | SJ/Z 9021.1-1987 | 1987-9-14 |
| Numbering of electrodes and designation of units in electronic tubes and valves | SJ/Z 9018-1987 | 1987-9-14 |
| Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors | SJ 2757-1987 | 1987-7-1 |
| Test procedures for antennas - Determination of radiation efficiency | SJ 2534.11-1987 | 1987-6-1 |
| Test procedures for antennas-Special measurement for angle-tracking antennas | SJ 2534.12-1987 | 1987-6-1 |
| Test procedures for antennas - Electromagnetic radiation hazards | SJ 2534.13-1987 | 1987-6-1 |
| Drawing rules for electronic products | SJ 2735-1986 | 1986-12-1 |
| Detail specification for electronic components - Fixed low-power non-wirewound resistors - Fixed metal film resistor, Type RJ17 Assessment level E | SJ 2675-1986 | 1986-10-1 |
| Specification of marine navigational radar equipment for Type 756 | SJ 2662-1986 | 1986-10-1 |
| Method for defermination of Tungsten by spectrometry | SJ 2656-1986 | 1986-10-1 |
| Test methods for resin type flux for soft solder | SJ 2660-1986 | 1986-10-1 |
| Collection of single crystal Germaninm defects | SJ/Z 2655-1986 | 1986-10-1 |
| Test procedrues for antennas - Phase measurement | SJ 2534.8-1986 | 1986-10-1 |
| Mothod of molybdeuum spectral analysis | SJ 2657-1986 | 1986-10-1 |
| Test procedures for antennas-On-site measurements of amplitude pattens | SJ 2534.7-1986 | 1986-10-1 |
| Detail specification for electronic components - Fixed low-power non-wirewound resistors - Fixed metal film resistors for Type RJ16 Assessment level E | SJ 2674-1986 | 1986-10-1 |
| Resin-core solder tin wire for electronic industry | SJ 2659-1986 | 1986-10-1 |
| Test procedures for antennas - Measurement of power gain and directivity | SJ 2534.10-1986 | 1986-10-1 |
| Test procedures for antennas-Antenna-range operation | SJ 2534.6-1985 | 1986-7-1 |
| Test procedures for antennas-Measurement of impedances | SJ 2534.14-1985 | 1986-7-1 |
| Test procedures for antennas - Environmental factors | SJ 2534.15-1987 | 1986-7-1 |
| Test procedures for antennas-Antenna-range evaluation | SJ 2534.4-1985 | 1986-7-1 |
| Test procedures for antennas-Special measurement techniques | SJ 2534.5-1985 | 1986-7-1 |
| Test procedures for antennas-Measurement of power-capacity | SJ 2534.16-1987 | 1986-7-1 |
| Test procedures for antennas-Antenna-range design | SJ 2534.2-1985 | 1986-7-1 |
| Test procedures for antennas-Polarization measurement | SJ 2534.9-1985 | 1986-7-1 |
| Reliability monitoring programs for use during research and development of radar equipment | SJ 2585-1985 | 1986-1-1 |
| Pure silicon tetrachloride | SJ 2593-1985 | 1986-1-1 |
| Single crystal silicon rods and wafers for solar cells | SJ 2572-1985 | 1985-10-1 |
| Prefered series of camera tubes | SJ 2526-1984 | 1985-7-1 |
| General specification for high-voltage and high-power pulse generating networks used in radar | SJ 2532-1984 | 1985-7-1 |
| General specification for high-voltage and high-power pulse transformers used in radar | SJ 2533-1984 | 1985-7-1 |
| Test procedures for antennas - Antenna-range instrumentation | SJ 2534.1-1984 | 1985-7-1 |
| Test procedures for antennas - Antenna-range measurements of radiation patterns | SJ 2534.3-1984 | 1985-7-1 |
| Test method of heater intermittence for transmitting tubes | SJ 2477-1984 | 1985-1-1 |
| Methods for tensile testing of fine metal wires | SJ 2425-1983 | 1984-10-1 |
| Optimum diameters of leads of capacitors and resistors | SJ 2420-1983 | 1984-6-1 |
| Test methods for elasticity modulus and loss factor of paper stock for loudspeakers | SJ 2317-1983 | 1983-10-1 |
| Specification for paper stock for use in loudspeakers | SJ 2316-1983 | 1983-10-1 |
| Gas-filled microwave switching tubes,Type RX-54 | SJ 2244-1982 | 1983-7-1 |
| Epoxy powder for coatings | SJ 2168-1982 | 1983-7-1 |
| Method of measurement of granularity of cathode carbonate | SJ 2253-1982 | 1983-7-1 |
| General requirements for analysis of cathode carbonate (Provisional) | SJ 2254-1982 | 1983-7-1 |
| Pulsed magnetrons, Type CKM-29B, CKM-29D, CKM-29E, CKM-29F, CKM-29G | SJ 2109-1982 | 1983-1-1 |
| Method of accelerated life test for oxide cathode | SJ 2133-1982 | 1983-1-1 |
| Interior graduation for cathode-ray tubes | SJ 2130-1982 | 1983-1-1 |
| Miorocrystal glass substrates for use in thick film integrated circuits | SJ 2154-1982 | 1983-1-1 |
| Power travelling wave tubes, Type B-211 | SJ 2012-1982 | 1982-7-1 |
| Electronic tubes, Type FU-824S(F) | SJ 1676-1981 | 1982-6-1 |
| Fluorescent character indicator tubes, Type YS9-3 | SJ 1861-1981 | 1982-6-1 |
| Fluorescent character indicator tubes,Type YS13-3 | SJ 1862-1981 | 1982-6-1 |
| Measurement of AM-PM conversion coefficient of power klystrons | SJ 1860-1981 | 1982-6-1 |
| Electronic tubes,Type FU-113Z(F) | SJ 1802-1981 | 1982-1-1 |
| Gas-filled microwave switching tubes,Type RX-56 | SJ 1724-1981 | 1981-7-1 |
| Method of accelerated life test of low power electronic tubes | SJ 1703-1981 | 1981-7-1 |
| Pulsed magnetrons,Type CKM-14H | SJ 1627-1980 | 1981-3-1 |
| Pulse modulator tubes,Type TM-90(J) | SJ 1620-1980 | 1981-1-1 |
| Method of analysis of Thorium oxide and Rhenium in Thorium-Tungsten-Rhenium wire for use in vacuum devices | SJ 1591-1980 | 1981-1-1 |
| Spiral anode X-ray tubes, Type XD51-20. 40/100 and XD51-20. 40/125 | SJ 1596-1980 | 1981-1-1 |
| Tungsten-Thorium-Rhenium wires for vacuum tubes | SJ 1587-1980 | 1981-1-1 |
| Methods for analysis of Cerium oxide in Cerium-Tungsten powder,plates and bars | SJ 1590-1980 | 1981-1-1 |
| Transmitting tubes, Type FU23S(Z) | SJ 1598-1980 | 1980-12-1 |
| Electronic tubes,Type FM-150 | SJ 1666-1980 | 1980-11-11 |
| Electronic tubes,Type FM-12F | SJ 1667-1980 | 1980-11-11 |
| Continuous wave magnetrons,Type CK-140B | SJ 1546-1979 | 1980-6-1 |
| Continuous wave magnetrons,Type CK-141 | SJ 1547-79 | 1980-6-1 |
| Pulsed magnetrons,Type CKM-120 | SJ 1545-79 | 1980-6-1 |
| Continuous wave magnetrons,Type CK-141 | SJ 1547-1979 | 1980-6-1 |
| Method for spectral analysis of Nickel- Tungsten-Magnesium alloy | SJ/Z 1544-79 | 1980-6-1 |
| Method for spectral analysis of Nickel- Tungsten-Magnesium alloy | SJ/Z 1544-1979 | 1980-6-1 |
| Method of life test for low power electronic tubes | SJ 26-79 | 1980-6-1 |
| Pulsed magnetrons,Type CKM-120 | SJ 1545-1979 | 1980-6-1 |
| Silicon epitaxial wafers (Provisional) | SJ 1549-1979 | 1980-6-1 |
| Continuous wave magnetrons,Type CK-140B | SJ 1546-79 | 1980-6-1 |
| Method of life test for low power electronic tubes | SJ 26-1979 | 1980-6-1 |
| Silicon epitaxial wafers (Provisional) | SJ 1549-79 | 1980-6-1 |
| ~ | SJ 1532-1979 | 1979-12-1 |
| Transmitting tubes,Type FU-433S | SJ 1533-1979 | 1979-12-1 |
| ~ | SJ 1532-79 | 1979-12-1 |
| Contact diameter series for leading ring of ceramic-metal electronic tubes | SJ 1531-1979 | 1979-12-1 |
| Transmitting tubes,Type FU-433S | SJ 1533-79 | 1979-12-1 |
| Contact diameter series for leading ring of ceramic-metal electronic tubes | SJ 1531-79 | 1979-12-1 |
| Method of chemical analysis of ceramic blank | SJ/Z 1465-79 | 1979-11-27 |
| Method of chemical analysis of raw materials for use in chemical engineering | SJ/Z 1466-1979 | 1979-11-27 |
| Method of chemical analysis of raw materials for use in chemical engineering | SJ/Z 1466-79 | 1979-11-27 |
| General requirements for chemical analysis of electronic ceramic materials | SJ/Z 1463-79 | 1979-11-27 |
| Method of chemical analysis of ore materials | SJ/Z 1464-79 | 1979-11-27 |
| Method of chemical analysis of ore materials | SJ/Z 1464-1979 | 1979-11-27 |
| General requirements for chemical analysis of electronic ceramic materials | SJ/Z 1463-1979 | 1979-11-27 |
| Method of chemical analysis of ceramic blank | SJ/Z 1465-1979 | 1979-11-27 |
| Methods of measurement for filament current and filament voltage of noise-generator diodes | SJ 1387-1978 | 1979-7-1 |
| Pulsed magnetron,Type CKM-114B | SJ 1439-78 | 1979-7-1 |
| Electronic tubes,Type FU-822Z(F) | SJ 1382-78 | 1979-7-1 |
| Pulsed magnetron, Type CKM-104B | SJ 1437-1978 | 1979-7-1 |
| Methods of measurement for nonliearity factor of excess noise power of noise-generator diodes | SJ 1390-78 | 1979-7-1 |
| Methods of measurement for anode conductance of noise-generator diodes | SJ 1388-1978 | 1979-7-1 |
| Methods of measurement for excess noise power of noise-generator diodes | SJ 1392-78 | 1979-7-1 |
| Structure and technology of test diode | SJ 1381-1978 | 1979-7-1 |
| Methods of measurement for cathode preheating time of gas discharge noise tubes | SJ 1393-1978 | 1979-7-1 |
| Methods of measurement for nonliearity factor of excess noise power of noise-generator diodes | SJ 1390-1978 | 1979-7-1 |
| Electronic tubes,Type FU-104Z(F) | SJ 1383-1978 | 1979-7-1 |
| Methods of measurement for firing voltage of gas discharge noise tubes | SJ 1394-1978 | 1979-7-1 |
| Methods of measurement for voltage standing wave ratio on cold conditions of noise-generator diodes | SJ 1391-1978 | 1979-7-1 |
| Methods of measurement for anode current and tube voltage drop of gas discharge noise tubes | SJ 1395-78 | 1979-7-1 |
| Electronic tubes,Type FU-822Z(F) | SJ 1382-1978 | 1979-7-1 |
| Pulsed magnetron, Type CKM-104 | SJ 1436-1978 | 1979-7-1 |
| Pulsed magnetron, Type CKM-114 | SJ 1438-1978 | 1979-7-1 |
| Methods of measurement for voltage standing wave ratio of gas discharge noise tubes | SJ 1396-78 | 1979-7-1 |
| General specification for noise-generator diodes and gas discharge noise tubes | SJ 1385-1978 | 1979-7-1 |
| General specification for noise-generator diodes and gas discharge noise tubes | SJ 1385-78 | 1979-7-1 |
| Measurement conditions for noise-generator diodes and gas discharge noise tubes | SJ 1386-78 | 1979-7-1 |
| Methods of measurement for voltage standing wave ratio of gas discharge noise tubes | SJ 1396-1978 | 1979-7-1 |
| Electronic tubes,Type FU-104Z(F) | SJ 1383-78 | 1979-7-1 |
| Measurement conditions for noise-generator diodes and gas discharge noise tubes | SJ 1386-1978 | 1979-7-1 |
| Methods of measurement for cathode preheating time of gas discharge noise tubes | SJ 1393-78 | 1979-7-1 |
| Pulsed magnetron, Type CKM-104 | SJ 1436-78 | 1979-7-1 |
| Methods of measurement for anode conductance of noise-generator diodes | SJ 1388-78 | 1979-7-1 |
| Pulsed magnetron,Type CKM-114B | SJ 1439-1978 | 1979-7-1 |
| Methods of measurement for anode current and tube voltage drop of gas discharge noise tubes | SJ 1395-1978 | 1979-7-1 |
| Methods of measurement for diodes leakage current between electrodes of noise-generator diodes | SJ 1389-78 | 1979-7-1 |
| Pulsed magnetron, Type CKM-104B | SJ 1437-78 | 1979-7-1 |
| Methods of measurement for excess noise power of noise-generator diodes | SJ 1392-1978 | 1979-7-1 |
| Methods of measurement for voltage standing wave ratio on cold conditions of noise-generator diodes | SJ 1391-78 | 1979-7-1 |
| Methods of measurement for filament current and filament voltage of noise-generator diodes | SJ 1387-78 | 1979-7-1 |
| Methods of measurement for decaying characteristic of gas discharge noise tubes | SJ 1397-1978 | 1979-7-1 |
| Methods of measurement for decaying characteristic of gas discharge noise tubes | SJ 1397-78 | 1979-7-1 |
| Methods of measurement for excess noise ratio and nonstationary characteristic of gas discharge noise tubes | SJ 1398-78 | 1979-7-1 |
| Methods of measurement for diodes leakage current between electrodes of noise-generator diodes | SJ 1389-1978 | 1979-7-1 |
| Methods of measurement for firing voltage of gas discharge noise tubes | SJ 1394-78 | 1979-7-1 |
| Pulsed magnetron, Type CKM-114 | SJ 1438-78 | 1979-7-1 |
| Methods of measurement for excess noise ratio and nonstationary characteristic of gas discharge noise tubes | SJ 1398-1978 | 1979-7-1 |
| Structure and technology of test diode | SJ 1381-78 | 1979-7-1 |
| Electronic tubes,Type FU-101F and F-101Z | SJ 1287-1977 | 1978-6-1 |
| Electronic tubes,Type FU-101F and F-101Z | SJ 1287-77 | 1978-6-1 |
| Phosphor Y12 | SJ 1168-77 | 1977-12-1 |
| Phosphor Y6 | SJ 1165-77 | 1977-12-1 |
| Phosphor Y12 | SJ 1168-1977 | 1977-12-1 |
| Phosphor Y6 | SJ 1165-1977 | 1977-12-1 |
| Electronic tubes,Type FU-105Z | SJ 1286-1977 | 1977-10-1 |
| Preferred series and types of fluorescent display tubes | SJ/Z 1122-1976 | 1977-10-1 |
| Preferred series and types of fluorescent display tubes | SJ/Z 1122-76 | 1977-10-1 |
| Electronic tubes,Type FU-105Z | SJ 1286-77 | 1977-10-1 |
| Low noise travelling wave tubes,Type B-101 | SJ 1143-77 | 1977-7-1 |
