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Title Standard No. Implemented On
Monocrystalline gallium arsenide polished wafers for solar cellGB/T 35305-20172018-7-1
Epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cellGB/T 35308-20172018-7-1
High pure germanium tetrachlorideYS/T 13-20152015-10-1
Polished monocrystalline silicon carbide wafersGB/T 30656-20142015-9-1
Gallium nitride based epitaxial layer for LED lightingGB/T 30854-20142015-4-1
Carbon/carbon composites guide shield of single crystal furnaceYS/T 978-20142015-4-1
GaP substrates for LED epitaxial chipsGB/T 30855-20142015-4-1
GaAs substrates for LED epitaxial chipsGB/T 30856-20142015-4-1
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafersGB/T 30867-20142015-2-1
GB/T 30868-2014GB/T 30868-20142015-2-1
Carbon-carbon composites crucible used in single crystal furnaceYS/T 792-20122013-3-1
Indium antimonide polycrystal,single crystals and as-cut slicesGB/T 11072-20092010-6-1
The sapphire substrates for nitride based light-emitting diodeSJ/T 11396-20092010-1-1
Horizontal bridgman grown gallium arsenide single crystal and cutting waferGB/T 11094-20072008-2-1
Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slicesGB/T 11093-20072008-2-1
Indium phosphide single crystalGB/T 20230-20062006-10-1
Gallium arsenide single crystalGB/T 20228-20062006-10-1
Gallium phosphide single crystalGB/T 20229-20062006-10-1
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