Code of China Chinese Classification Professional Classification ICS Classification Latest Value-added Services

LoginRegister

Title Standard No. Implemented On
Integrated test specification for high power conversion system in fusion deviceT/CPSS 1006-2018
Low voltage active power filterT/CPSS 1002-2018
Low-voltage static var generatorT/CPSS 1003-2018
Short-circuit test method for high power converter in fusion deviceT/CPSS 1007-2018
Low voltage distribution network active unbalance compensation deviceT/CPSS 1001-2018
Technical specification for performance test of PV-storage integrated converterT/CPSS 1004-2018
Thyristor valves for HVDC transmissionGB/T 36559-20182019-2-1
Specification of system design for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)GB/T 35703-20172018-7-1
Power losses in voltage sourced converter(VSC)valves for high-voltage direct current(HVDC)systems―Part 1:General requirementsGB/T 35702.1-20172018-7-1
Power losses in voltage sourced converter(VSC)valves for high-voltage directcurrent (HVDC) systems―Part 2:Modular multilevel convertersGB/T 35702.2-20172018-7-1
Variable-frequency drive of 1 kV and below―Part 3:Safety requirementsGB/T 30844.3-20172018-4-1
Variable-frequency drive above 1 kV and not exceeding 35 kV―Part 3:Safety requirementsGB/T 30843.3-20172018-4-1
General requirements for press-pack insulate gate bipolar transistors (IGBT) for flexible transmissionT/CEC 155-20182018-4-1
Terminology for voltage-sourced converters ( VSC) for high voltage direct current (HVDC) systemsGB/T 34118-20172018-2-1
Motor soft-start device--Method of type designationGB/T 33595-20172018-2-1
Motor soft-start device--TerminologyGB/T 33984-20172018-2-1
Technical code of converter for photovoltaic air-conditionerT/CEEIA 292-20172017-12-29
Semiconductor devices―Discrete devices and integrated circuits― Part 2: Rectifier diodesGB/T 4023-20152017-1-1
Semiconductor devices — Part 6: ThyristorsGB/T 15291-20152017-1-1
Variable-frequency drive for machine toolGB/T 32505-20162016-9-1
Thyristor valves of multistage controlled shunt reactors in extra high-voltage transmission systemsGB/T 32516-20162016-9-1
Variable-frequency drive for injection molding machineGB/T 32515-20162016-9-1
Direct current de-icing devices―Part 3:TestsGB/T 31487.3-20152015-12-1
Direct current de-icing devices―Part 1:System design and application guideGB/T 31487.1-20152015-12-1
Direct current de-icing devices―Part 2:Thyristor valvesGB/T 31487.2-20152015-12-1
Variable-frequency drive of 1kV and below—Part 2:Test methodsGB/T 30844.2-20142015-1-22
Variable-frequency drive above 1kV and not exceeding 35kV—Part 2: Test methodsGB/T 30843.2-20142015-1-22
Variable-frequency drive of 1 kV and below—Part 1: Technical conditionsGB/T 30844.1-20142015-1-22
Variable-frequency drive above 1kV and not exceeding 35kV—Part 1: Technical conditionsGB/T 30843.1-20142015-1-22
High-voltage Direct Current Power Transmission Using Voltage Sourced ConvertersGB/T 30553-20142014-10-28
Design guidelines of thyristor valves for high voltage direct current(HVDC)power transmissionGB/Z 30424-20132014-7-13
Water Cooling Equipment for Converter Valves for High Voltage Direct Current (HVDC) Power TransmissionGB/T 30425-20132014-7-13
Static var compensators(SVC)—System design and application guidelinesGB/Z 29630-20132013-12-2
Semiconductor converters—General requirements and line commutated converters—Part 1-1:Specification of basic requirementsGB/T 3859.1-20132013-12-2
Semiconductor converters—General requirements and line commutated converters—Part 1-3:Transformers and reactorsGB/T 3859.3-20132013-12-2
Semiconductor converters—Electrical test methodsGB/T 13422-20132013-12-2
Semiconductor converters—General requirements and line commutated converters—Part 1-2:Application guideGB/T 3859.2-20132013-12-2
Water cooling equipment for static var compensatorsGB/T 29629-20132013-12-2
Electrical testing of thyristor valves for ±800 kV ultra high voltage direct current (UHVDC) power transmissionGB/T 28563-20122012-11-1
Low-voltage active power filter (APF)JB/T 11067-20112012-4-1
Low-voltage reactive power dynamic compensation equipment with zero transitionGB/T 25839-20102011-9-1
Charging equipment for industrial batteriesJB/T 10095-20102010-7-1
AC solid-state relaysJB/T 11050-20102010-7-1
Rectifier equipment for DC system in electric power engineeringJB/T 10979-20102010-7-1
Thyristor a.c. power controllersJB/T 3283-20102010-7-1
General requirements for light-trigged thyristors for HVDC transmissionGB/T 21420-20082008-9-1
Semiconductor convertors - Identification code for convertor connectionsGB/T 21226-20072008-5-20
General requirements for thyristors for HVDC transmissionGB/T 20992-20072008-2-1
Determination of power losses in high-voltage direct current(HVDC)converter stationsGB/T 20989-20072008-2-1
Thyristor valves for high voltage direct current(HVDC)power transmission—Part 1:Electrical testingGB/T 20990.1-20072008-2-1
Power electronics for electrical transmission and distribution systems—Testing of thyristor valves for static VAR compensatorsGB/T 20995-20072008-2-1
Performance of high-voltage direct current(HVDC)systems—Part 2:Faults and switchingGB/Z 20996.2-20072008-2-1
Performance of high-voltage direct current (HVDC)systems—Part 3:Dynamic conditionsGB/Z 20996.3-20072008-2-1
Performance of high-voltage direct current(HVDC) systems—Part 1:Steady-state conditionsGB/Z 20996.1-20072008-2-1
Terminology for high-voltage direct current(HVDC)transmissionGB/T 13498-20072008-2-1
Guide for compatibility and protection of interference effects between semiconductor convertors and power supply systemGB/T 10236-20062007-4-1
Technical Requirements and Testing Methods for Overvoltage and Overcurrent of IDC TerminationsYD/T 1541-20062007-1-1
High voltage variable frequency drive used in draft fan and pump of power plantDL/T 994-20062006-10-1
Technical Specifications for Energy Conservation Product Certification for Line Traps for AC Power SystemCCEC/T 06-20062006-2-23
Semiconductor devices discrete devices blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A GB/T 13150-20052005-10-1
Semiconductor devices - Discrete devices - Part 6: thyristors - Section three - Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents GB/T 13151-20052005-10-1
Ceramic parts of case for power semiconductor devicesJB/T 10501-20052005-9-1
Rings for dies of semiconductor devicesJB/T 5842-20052005-9-1
Components of gate terminal for power semiconductor devicesJB/T 5835-20052005-9-1
Connectors for power semiconductor devicesJB/T 5843-20052005-9-1
Semiconductor converter - Self-commutated semiconductor converters including direct d.c.convertersGB/T 3859.4-20042004-12-2
Measuring method of thermal resistance and input fluid-output fluid pressure difference of heat sink for power semiconductor deviceGB/T 8446.2-19872004-8-1
Heat sink for power semiconductor device—Part 1:Casting kind seriesGB/T 8446.1-20042004-8-1
Heat sink for power semiconductor device - Part 2: Measuring method of thermal resistance and imput fluid-output fluid pressure differenceGB/T 8446.2-20042004-8-1
Semiconductor power convertors--Adjustable speed electric drive systems--General requirements--Part 1:Rating specifications,particularly for d.c.motor drivesGB/T 3886.1-20012002-6-1
Selecting guide of heat sink for power semiconductor deviceJB/T 9684-20002000-10-1
Case for power semiconductor deviceJB/T 10097-20002000-10-1
Selection guidance of case for power semiconductor deviceJB/T 10096-20002000-10-1
Semiconductor converter - Part 6: Application guide for the protection of semiconductor converters against overcurrent by fuses GB/T 17950-20002000-8-1
Insulated Gate Bipolar Transistor Modules Arm and Pair of ArmsJB/T 8951.2-19992000-1-1
Insulated Gate Bipolar TransistorJB/T 8951.1-19992000-1-1
Rectifying Equipment for Traction SubstationsJB/T 9689-19992000-1-1
Thyristor rectifiers intended to be used in charging and float charging of batteriesJB/T 10095-19992000-1-1
Rectifier Diodes for Rotating ExcitationJB/T 9686-19992000-1-1
Type designation for power semiconductor deviceJB/T 2423-19992000-1-1
Outline dimensions of extruded heat sink for power semiconductor devicesJB/T 8175-19992000-1-1
High Voltage Rectifier StackJB/T 9685-19992000-1-1
Type Designation of Measuring Equipments for Power Semiconductor DevicesJB/T 4219-19992000-1-1
Molybdenum Disk for Power Semiconductor DevicesJB/T 9687.1-19992000-1-1
General Rectifier Diodes with Electric Current Lower than 100AJB/T 8949.1-19992000-1-1
Heat sink for power semiconductor deviceGB/T 8446.1-19871999-5-1
Semiconductor direct d. c. convertorsGB/T 7677-19871999-5-1
Semiconductor self-commutated convertorsGB/T 7678-19871999-5-1
Selection Guidance of Case for Power Semiconductor DeviceJB/T 10096-19991999-4-5
Hot Pipe Radiators Intended to be Used in Power Semiconductor DevicesJB/T 8757-19981998-12-1
Criteria for Value Determination of Parameters of ThyristorJB/T 8758-19981998-12-1
Rectifier for electrochemistryJB/T 8740-19981998-11-1
Aluminum Nitride Ceramics Substrate Intended to Be Used in Power Semiconductor ModulesJB/T 8736-19981998-11-1
Measuring methods for insulated-gate bipolar transistorGB/T 17007-19971998-8-1
Terminology and letter symbols for insulated-gate bipolar transistorGB/T 17008-19971998-8-1
Terminal markings for valve device stacks and assemblies and for power convertor equipmentGB/T 16859-19971998-3-1
Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100AGB/T 16894-19971998-3-1
Rectifier Intended to Be Used in Electrophoretic CoatingJB/T 8675-19971998-2-1
Construction Parts of Electric Semiconductor ModulesJB/T 8661-19971998-2-1
Semiconductor Frequency Changing Unit Intended to Be Used in Medium Frequency Induction HeatingJB/T 8669-19971998-2-1
Bi-directional ThyristorJB/T 4192-19961997-7-1
Single-phase Bridge Module for MTQ (MFQ) Series ThyristorsJB/T 7826.2-19961997-1-1
High Frequency ThyristorsJB/T 8454-19961997-1-1
Packing of Power Semiconductor PartsJB/T 4277-19961997-1-1
Single-phase Bridge Module for MTS (MFS) Series ThyristorsJB/T 7826.3-19961997-1-1
Coated Quartz Glass Tubes Intended to Be Used in the Production Process of Power Semiconductor DevicesJB/T 8320-19961996-10-1
Avalanche Rectifier Diode and Accessories Intended to Be Used in Motor Vehicles - UB Series Bridge Avalanche Rectifier Assemblies Intended to Be Used in Motor VehiclesJB/T 7821-19951996-7-1
Avalanche Rectifier Diode and Accessories Intended to Be Used in Motor Vehicles - Avalanche Rectifier Intended to Be Used in Diode ZQ Series 15A-50A Motor VehiclesJB/T 7820-19951996-7-1
MT and MF Series Thyristor Modules with Pair of ArmsJB/T 7826.1-19951996-7-1
Sampling Method for Test of Power Semiconductor DevicesJB/T 7786-19951996-1-1
Measuring methods for thyristor - Gate turn-off thyristorGB/T 15293-19941995-10-1
Semiconductor devices Part 6 ThyristorsGB/T 15291-19941995-10-1
Measuring methods for thyristor Reverse conducting triode thyristorGB/T 15292-19941995-10-1
UDC Series Triphase High Voltage Rectifier AssembliesJB/T 7560-19941995-6-1
Compensation Type AC Voltage RegulatorsJB/T 7620-19941995-6-1
Case of Rectifier Diodes Intended to Be Used in Motor VehiclesJB/T 7623-19941995-6-1
Test Method for Two-way Triple Pole ThyristorsJB/T 7619-19941995-6-1
Test Method for Thyristor Modules - Pair of Arms and Anti-parallel Pair of ArmsJB/T 7625.2-19941995-6-1
Test Method for Thyristor Modules - Single-phase Bridges and Triphase BridgesJB/T 7625.3-19941995-6-1
High alumina refractory mortarsGB/T 2994-19941995-1-1
Rated Voltage and Current of Power Semiconductor DevicesJB/T 7063-19931994-1-1
Silicon Wafers Intended to Be Used in Power Semiconductor DevicesJB/T 7061-19931994-1-1
KB Series Two Pole Thyristors for Overvoltage ProtectionJB/T 7060-19931994-1-1
Guide for Preparation of Standard for Power Semiconductor ModulesJB/T 7059-19931994-1-1
Terminology for high-voltage direct current transmissionGB/T 13498-19921993-3-1
Test Method for Power Semiconductor Module Arm and Pair of Arms of Bipolar TransistorJB/T 6307.4-19921993-1-1
Thyristors Intended to be Used in KE Model 50A-500A Welding MachinesJB/T 6324-19921993-1-1
Test Method for Power Semiconductor Module Single-phase Bridge Rectifier DiodesJB/T 6307.2-19921993-1-1
Hot-chamber diecasting machine Part 2: Testing of the accuracyJB/T 6307.1-19921993-1-1
Centrifugal casting machine -- Technical requiremnetsJB/T 6305-19921993-1-1
ZQ Series 5A-50A Rectifier Diodes Intended to be Used in Motor VehiclesJB/T 6321-19921993-1-1
Test Method for Power Semiconductor Module Triphase Bridge Rectifier DiodeJB/T 6307.3-19921993-1-1
Blank detail specification for reverse blocking triode thyristors, ambient or case-rated, above 100AGB 13151-19911992-5-1
Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100AGB/T 13150-19911992-5-1
Blank detail specification for gate turn-off thyristors, ambient or case-rated, 5A and aboveGB/T 13153-19911992-5-1
Blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5A/5A and above GB/T 13152-19911992-5-1
Guide for evaluuation of interference effects and com-patibility technology between semiconductor convertorsand power supply systenGB 10236-19881990-1-1
Insulators and fasteners for heat sink for power semiconductor deviceGB/T 8446.3-19881989-9-1
Method for Designing Types of Power Semiconductor ConvertersJB/T 1505-19751975-7-1
About Us Contact Us Payment
Tel: +86-10-8572 5655 | Fax: +86-10-8581 9515 Email: coc@codeofchina.com | Send me a messageQQ: 672269886
Copyright: Codeofchina Inc 2008-2020