Code of China Chinese Classification Professional Classification ICS Classification Latest Value-added Services

LoginRegister

Title Standard No. Implemented On
International data transmission services and optional user facilities in public data networksGB/T 11590-1989
Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT)GB/T 29332-20122013-6-1
semiconductro discrete devices detail specification for type 3da516 silicon microwave pulse power transistorSJ 50033/170-20072008-2-1
semiconductro discrete devices detail specification for type 3da519 silicon microwave pulse power transistorSJ 50033/172-20072008-2-1
semiconductro discrete devices detail specification for type 3da523 silicon microwave pulse power transistorSJ 50033/176-20072008-2-1
Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistorSJ 50033/166-20042004-12-1
Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistorSJ 50033/168-20042004-12-1
Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistorSJ 50033/167-20042004-12-1
Semiconductor discrete devices Detail specification for type 3DA510 silicon microwave pulse power transistorSJ 50033/169-20042004-12-1
Semiconductor discrete device Detail specification of type 3DK457 for power switching transistorsSJ 50033/163-20032004-3-1
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistorSJ/T 11227-20002000-10-1
Detail specification for electronic components Type 3DA505 L band silicon pulse power transistorSJ/T 11226-20002000-10-1
Detail specification for electronic components Type 3DA504 S band silicon pulse power transistorSJ/T 11225-20002000-10-1
Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHzGB/T 6219-19981999-6-1
Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplificationGB/T 6217-19981999-6-1
devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplificationGB/T 7576-19981999-6-1
detail specification for case-rated bipolar transistors for low-frequency amplificationGB/T 7577-19961997-1-1
Semiconductor devices - Discrete devices - Part 3 : Signal(including switching)and regulator diodesGB/T 6571-19951996-4-1
Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistorsGB/T 4587-19941995-8-1
Semiconductor devices-Discrete devices-Part 8: Field-effect transistorsGB/T 4586-19941995-8-1
Detail specification for electronic components--Case-rated transistor for type 3DD401 silicon NPN for low frequency amplificationGB 9511-19881989-2-1
Detail specification for electronic components--Ambient-rated transistor for type 3CG844 silicon PNP for high frequency amplificationGB 9507-19881989-2-1
Detail specification for electronic components--Ambie-nt-rated transistor for type 3DG1815 silicon NPN for high frequency amplificationGB 9522-19881989-2-1
Detail specification for electronic components--Case-rated transistor for type 3CD546 silicon PNP for low frequency amplificationGB 9512-19881989-2-1
of outlines for semiconductor discrete devicesGB/T 7581-19871987-11-1
Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK107A, 3DK107BGB 7150-19871987-9-1
Detail specification for electronic components--Single-gate junction type field-effect transistors of types CS111, CS112, CS113, CS114, CS115, CS116GB 7148-19871987-9-1
Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK105A, 3DK105BGB 7149-19871987-9-1
Detail specification for electronic components--Ambint-rated bipolar transistors for high frequency amplification type 3DG80GB 7147-19871987-9-1
Detail specification for electronic component--Forward AGC low-noise transistor for high-frequency amplification--Type 3 DG79GB 6353-19861987-1-1
Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3DX201A, 3DX201B, 3DX201CGB 6357-19861986-12-1
Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CX201A, 3CX201B, 3CX201CGB 6356-19861986-12-1
Detail specification for silicon NPN low frequency high power high reverse voltage transistors Type 3DD101 and 3DD102SJ 935-19751976-6-1
Detail specification for silicon NPN low frequency high power high reversse voltage transistors Type 3DD100SJ 934-19751976-1-1
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG161SJ 797-19741974-10-1
About Us Contact Us Payment
Tel: +86-10-8572 5655 | Fax: +86-10-8581 9515 Email: coc@codeofchina.com | Send me a messageQQ: 672269886
Copyright: Codeofchina Inc 2008-2020