Semiconductor triode L42 - Chinese Standard Classification - Code of China

2025-12-25 10.8.118.215

Code of China

Chinese Classification Professional Classification ICS Classification Latest Value-added Services

Code of China

Chinese National Standard List: Semiconductor triode

GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT)
Issued on: 2012-12-31 Translation Price(USD): 750.0

SJ 50033/176-2007 semiconductro discrete devices detail specification for type 3da523 silicon microwave pulse power transistor
Issued on: 2008-1-24 Translation Price(USD): 120.0

SJ 50033/172-2007 semiconductro discrete devices detail specification for type 3da519 silicon microwave pulse power transistor
Issued on: 2008-1-24 Translation Price(USD): 150.0

SJ 50033/170-2007 semiconductro discrete devices detail specification for type 3da516 silicon microwave pulse power transistor
Issued on: 2008-1-24 Translation Price(USD): 150.0

SJ 50033/169-2004 Semiconductor discrete devices Detail specification for type 3DA510 silicon microwave pulse power transistor
Issued on: 2004-08-02 Translation Price(USD): 150.0

SJ 50033/168-2004 Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor
Issued on: 2004-08-02 Translation Price(USD): 150.0

SJ 50033/166-2004 Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor
Issued on: 2004-08-02 Translation Price(USD): 130.0

SJ 50033/167-2004 Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor
Issued on: 2004-8-2 Translation Price(USD): 130.0

SJ 50033/163-2003 Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors
Issued on: 2003-12-15 Translation Price(USD): 150.0

SJ/T 11225-2000 Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor
Issued on: 2000-08-16 Translation Price(USD): 160.0

SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor
Issued on: 2000-8-16 Translation Price(USD): 150.0

SJ/T 11227-2000 Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor
Issued on: 2000-8-16 Translation Price(USD): 160.0

GB/T 7576-1998 devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification
Issued on: 1998-1-1 Translation Price(USD): 210.0

GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
Issued on: 1998-1-1 Translation Price(USD): 210.0

GB/T 6217-1998 Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
Issued on: 1998-1-1 Translation Price(USD): 210.0

GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications
Issued on: 1996-7-1 Translation Price(USD): 180.0

GB/T 7577-1996 detail specification for case-rated bipolar transistors for low-frequency amplification
Issued on: 1996-7-9 Translation Price(USD): 150.0

GB/T 6571-1995 Semiconductor devices - Discrete devices - Part 3 : Signal(including switching)and regulator diodes
Issued on: 1995-7-2 Translation Price(USD): 520.0

GB/T 4587-1994 Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors
Issued on: 1994-12-31 Translation Price(USD): 900.0

GB/T 4586-1994 Semiconductor devices－Discrete devices－Part 8: Field-effect transistors
Issued on: 1994-12-31 Translation Price(USD): 520.0

About Us | Contact Us | Terms of Service | Privacy | Cancellation & Refund Policy | Payment

Tel: +86-10-8572 5655 | Fax: +86-10-8581 9515 Email: coc@codeofchina.com |

Send me a message

Copyright: Beijing COC Tech Co., Ltd. 2008-2040