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Title Standard No. Implemented On
Network Security Emergency Handling Team Construct GuidelinesYD/T 1826-20082008-11-1
Network Incident Object Description Exchange FormatYD/T 1827-20082008-11-1
Framework of Information Security Operation CenterYD/T 1800-20082008-6-1
IP over WDM integrated network management system technical specificationYD/T 1293-20032003-12-30
Management Arrangement for TechnologicalDocuments in Posts and Telecommunication’IndustryYD/T 996-19981999-6-1
Type designation system for sensing elements and sensing devices and transducers/sensorsSJ/T 11167-19981998-5-1
Detail specification for electronic components - Surge suppression varistors - Type MYL1 zinc oxide varistors for use in lightning arrester - Assessment level ESJ/T 2307.1-19971998-1-1
Basic requirement of quality manual for communications equipment production enterprises - telecommunication equipment partYD/T 932-19971998-1-1
Semiconductor optoelectronic devices-Detail specification for o/G double colour light emitting diode for Type GF511SJ 50033/99-19951996-10-1
Semiconductor discrete devices - Detail specification for Type 3DG143 NPN silicon high-frequency low-noise low-power transistorSJ 50033/94-19951996-10-1
Detail specification for semiconductor laser diode modules for Type GJ1325SJ 50033/101-19951996-10-1
Semiconductor discrete devices-Detail specification for Type 2CJ60 step recovery diodesSJ 50033/100-19951996-10-1
Semiconductor discrete devices-Detail specification for Type 3DG144 NPN silicon high-frequency low-noise low-power transistorSJ 50033/95-19951996-10-1
Semiconductor discrete devices - Detail specification for Type 3DG142 NPN silicon high-frequency low-noise low-power transistorSJ 50033/93-19951996-10-1
Semiconductor discrete devices - Detail specification for Type 2CJ4011, 2CJ4012, 2CJ4021 and 2CJ4022 step recovery diodesSJ 50033/97-19951996-10-1
Semiconductor discrete devices-Detail specification for Type 3DG216 NPN silicon low-power difference matched-pair transistorSJ 50033/96-19951996-10-1
Semiconductor discrete devices-Detail specification for Type 2CJ4211 and 2CJ4212 step recovery diodesSJ 50033/98-19951996-10-1
Semiconductor discrete device-Detail specification for Type PIN342 series for PIN diodeSJ 50033/71-19951995-12-1
Semiconductor discrete devices-Detail specification for Type CS0524 GaAs microwave power FETSJ 50033/81-19951995-12-1
Semiconductor discrete devices-Detail specification for Type 3CD100 low-frequency and high-power transistorSJ 50033/92-19951995-12-1
Semiconductor discrete device-Detail specification for Type 3DK40 power switching transistorSJ 50033/60-19951995-12-1
Semiconductor discrete device-Detail specification for Type 3DK39 power switching transistorSJ 50033/59-19951995-12-1
Semiconductor discrete devices-Detail specification for Type CS4091~CS4093 silicon N-channel deplition mode field-effect transistorSJ 50033/87-19951995-12-1
Semiconductor discrete devices - Detail specification for Type CS0464 GaAs microwave FETSJ 50033/78-19951995-12-1
Semiconductor discrete devices-Detail specification for Type CS0513 GaAs microwave power FETSJ 50033/80-19951995-12-1
Semiconductor discrete devices-Detail specification for Type 3CD030 low-frequency and high-power transistorSJ 50033/91-19951995-12-1
Semiconductor discrete devices - Detail specification for Type 3DA331 silicon microwave power transistorSJ 50033/77-19951995-12-1
Semiconductor discrete devices - Detail specification for Type CS140 silicon N-channel MOS deplition mode field-effect transistorSJ 50033/84-19951995-12-1
Examining Procedures for Standardization of New Products for Posts and Communications IndustryYD/T 756-19951995-12-1
Semiconductor discrete devices - Detail specification for Type CS141 silicon N-channel MOS deplition mode field-effect transistorSJ 50033/85-19951995-12-1
Semiconductor discrete device - Detail specification for Type 3DD103 high-voltage, low-frequency and high-power transistorSJ 50033/67-19951995-12-1
Semiconductor discrete device-Detail specification for Type 3DD880 low-frequency and high-power transistorSJ 50033/66-19951995-12-1
Semiconductor discrete devices-Detail specification for Type CS6768 and CS6770 silicon N-channel enhancement mode field effect transistorSJ 50033/89-19951995-12-1
Semiconductor discrete devices - Detail specification for Type 3DK100 NPN silicon low-power switching transistorSJ 50033/82-19951995-12-1
Semiconductor discrete devices-Detail specification for Type CS0536 GaAs microwave power FETSJ 50033/79-19951995-12-1
Semiconductor discrete devices - Detail specification for Type CS5114~CS5116 silicon P-channel deplition mode field-effect transistorSJ 50033/86-19951995-12-1
Semiconductor optoelectronic device - Detail specification for green light emitting diode for Type GF413SJ 50033/58-19951995-12-1
Semiconductor discrete device-Detail specification for Type 3CD010 low-frequency and high-power transistorSJ 50033/64-19951995-12-1
Semiconductor discrete devices-Detail specification for Type 3DA325 silicon microwave power transistorSJ 50033/74-19951995-12-1
Semiconductor discrete device - Detail specification for Type 3DD175 low-frequency and high-power transistorSJ 50033/65-19951995-12-1
Semiconductor discrete device - Detail specification for Type 3DK406 high-voltage and power switching transistorSJ 50033/62-19951995-12-1
Semiconductor discrete devices - Detail specification for Type 3DG218 silicon microwave low-noise transistorSJ 50033/76-19951995-12-1
Semiconductor discrete device-Detail specification for Type PIN30 series for PIN diodeSJ 50033/69-19951995-12-1
Semiconductor discrete device - Detail specification for Type 3CD020 low-frequency and high-power transistorSJ 50033/63-19951995-12-1
Semiconductors discrete device - Detail specification for Type BT51 NPN-silicon small power difference matched-pair transistorSJ 50033/68-19951995-12-1
Semiconductor discrete device Detail specification for type QL74 silicon single phase bridge rectifierSJ 50033/73-19951995-12-1
Semiconductor discrete device - Detail specification for Type PIN35 series for PIN diodeSJ 50033/70-19951995-12-1
Semiconductor discrete devices - Detail specification for Type 3DK106 NPN silicon low-power switching transistorSJ 50033/90-19951995-12-1
Semiconductor discrete device - Detail specification for Type PIN323 series for PIN diodeSJ 50033/72-19951995-12-1
Semiconductor discrete devices-Detail specification for Type 3DG135 silicon ultra high frequency low-power transistorSJ 50033/75-19951995-12-1
Semiconductor discrete device - Detail specification for Type 3DK6547 high-voltage and power switching transistorSJ 50033/61-19951995-12-1
Semiconductor discrete devices-Detail specification for Type CS139 silicon P-channel MOS enhancement mode field-effect transistorSJ 50033/83-19951995-12-1
Semiconductor discrete devices-Detail specification for Type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistorSJ 50033/88-19951995-12-1
Design Document Management System for Posts and Telecommunications IndustryYD/T 166-19941994-12-1
Semiconductor discrete device - Detail specification for type CS0530 and CS0531 GaAs microwave power field effect transistorSJ 50033.53-19941994-12-1
Semiconductor discrete device - Detail specification for type CS0532 GaAs microwave power field effect transistorSJ 50033.54-19941994-12-1
Design Document Assortment Tables for Posts and Telecommunications IndustryYD/T 167-19941994-12-1
Semiconductor discrete device-Detail specification for type CS0529 GaAs microwave power field effect transistorSJ 50033.52-19941994-12-1
Semiconductor discrete device-Detail specification for type 2CK85 silicon switching diodeSJ 50033.56-19941994-12-1
Graphical symbols for electrical diagrams sensorSJ/T 10555-19941994-12-1
Technological Document Formats for Posts and Telecommunications IndustryYD/T 172-19941994-12-1
Semiconductor discrete device - Detail specification for type 2CK82 silicon switching diodeSJ 50033.55-19941994-12-1
Letter symbols for sensorSJ/T 10554-19941994-12-1
Semiconductor discreted devices - Detail specification for type CS0558 GaAs microwave dual gate FETSJ 50033.51-19941994-12-1
Blank detail specification for the plenoresistive pressure transducer Assessment level ESJ/T 10430-19931994-6-1
Resistance type humidity sensors for use in electronic equipment-Part 1:General specificationSJ/T 10432-19931994-6-1
General specification for the piezoresistive pressure transducerSJ/T 10429-19931994-6-1
Humidity generators and humidity testing methods for the humidity sensorsSJ/T 10431-19931994-6-1
Type Designation System for Optical Communication EquipmentYD/T 638.2-19931994-2-1
Type Designation for Products of Posts and Telecommunications Industry General RulesYD/T 638.1-19931994-2-1
Type Designation for Accessory Equipments of Telephone ExchangeYD/T 638.13-19931994-2-1
Type Designation for Radio, Microwave and Satellite Communication EquipmentsYD/T 638.10-19931994-2-1
Type Designation for Telegraph Communication EquipmentYD/T 638.6-19931994-2-1
Type Designation System for Telephone SetsYD/T 638.14-19931994-2-1
Type Designation for Facsimile Communication Equipments and Automated Office EquipmentYD/T 638.8-19931994-2-1
Detail specification for zinc oxide varistors for over-voltage protection for Type MYG3SJ/T 10349-19931993-10-1
Detail specification for zinc oxide varistors for over-voltage protection for Type MYG2SJ/T 10348-19931993-3-25
Type Designation System for Telephone SwitchboardsYD/T 638.5-19931993-2-1
Measurement of photosensitive devices - Part 3: Methods of measurement for photoconductive cells for use in the visible spectrumSJ/Z 9011.3-19871987-9-14
Measurement of photosensitive devices--Part 4: Methods of measurement for photomultipliersSJ/Z 9011.4-19871987-9-14
Measurement of photosensitive devices - Part 1: Basic recommendationsSJ/Z 9011.1-19871987-9-14
Directly heated positive temperature coefficient thermistors used for temperature compensation for Type MZ11SJ 2028.1-19831983-10-1
Positive temperature coefficient thermistors used for temperature control for Type MZ61SJ 2028.2-19831983-10-1
Method of measurement for pulse rise fall delay and storage time of semiconductor photocouplersSJ 2215.11-19821983-7-1
Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistorsSJ 2214.9-19821983-7-1
General procedures of measurement for semiconductor photodiodes and phototransistorsSJ 2214.1-19821983-7-1
Method of measurement for direct current transfer ratio of semiconductor photocouplersSJ 2215.10-19821983-7-1
Method of measurement for forward current of semiconductor photocouplers (diodes)SJ 2215.3-19821983-7-1
Method of measurement for collector-emitter reverse breakdown voltage of semiconductor photocouplers (diodes)SJ 2215.7-19821983-7-1
Method of measurement for forward voltage of semiconductor photocouplers (diodes)SJ 2215.2-19821983-7-1
Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)SJ 2215.5-19821983-7-1
Silicon photodiodesSJ 2216-19821983-7-1
Method of measurement for dark current of semiconductor photodiodesSJ 2214.3-19821983-7-1
Method of measurement for input-to-output capacitance of semiconductor photocouplersSJ 2215.12-19821983-7-1
Silicon phototransistorsSJ 2217-19821983-7-1
Method of measurement for junction capacitance of semiconductor photodiodesSJ 2214.5-19821983-7-1
Method of measurement for reverse break-down voltage of semiconductor photodiodesSJ 2214.4-19821983-7-1
Method of measurement for dark current voltage of semiconductor phototransistorsSJ 2214.8-19821983-7-1
Method of measurement for light current of semiconductor photodiodes and phototransistorsSJ 2214.10-19821983-7-1
General procedures of measurement for semiconductor photocouplersSJ 2215.1-19821983-7-1
Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)SJ 2215.8-19821983-7-1
Method of measurement for input-to-output isolation voltage of semiconductor photocouplersSJ 2215.14-19821983-7-1
Method of measurement for reverse current of semiconductor photocouplers (diodes)SJ 2215.4-19821983-7-1
Method of measurement for junction capacitance of semiconductor photocouplers (diodes)SJ 2215.6-19821983-7-1
Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistorsSJ 2214.6-19821983-7-1
Method of measurement for input-to-output isolation resistance of semiconductor photocouplersSJ 2215.13-19821983-7-1
Method of measurement for reverse cut-off current of semiconductor photocouplers transistorsSJ 2215.9-19821983-7-1
Method of measurement for saturation voltage of semiconductor phototransistorsSJ 2214.7-19821983-7-1
Method of measurement for forward voltage of semiconductor photodiodesSJ 2214.2-19821983-7-1
Generic specification for directly heated positive temperature coefficient thermistorsSJ 2028-19821982-9-1
General specification for indirectly heated temperature coefficient themistorsSJ 1557-19801980-10-1
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