Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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YS/T 1061-2015 Silicon core for polysilicon by improved siemens method 105.0 via email in 1~3 business day valid
GB/T 12963-2014 Electronic-grade polycrystalline silicon 90.0 via email in 1~3 business day valid
GB/T 32573-2016 Silicon powder―Determination of total carbon content―Infrared absorption method after combustion in an induction furnace 150.0 via email in 1~3 business day valid
GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers 165.0 via email in 1~3 business day valid
GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices 105.0 via email in 1~3 business day superseded
GB/T 12962-2015 Monocrystalline silicon 150.0 via email in 1~3 business day valid
GB/T 25076-2018 Monocrystalline silicon for solar cell via email in business day to be valid
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer 180.0 via email in 1~3 business day valid
GB/T 29055-2012 Multi-crystalline silicon wafer for solar cell 110.0 via email in 1~3 business day valid
YS/T 557-2006 Test method for bulk acoustic wave attenuation of piezoelectric lithium niobate crystals 105.0 via email in 1~3 business day valid
GB/T 26072-2010 Germanium single crystal for solar cell 130.0 via email in 1~3 business day valid
GB/T 29506-2013 300 mm polished monocrystalline silicon wafers 170.0 via email in 1~3 business day valid
GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices 120.0 via email in 1~3 business day superseded
GB/T 29054-2012 Solar-grade casting multi-crystalline silicon brick 110.0 via email in 1~3 business day valid
SJ 20858-2002 Measuring methods for electrical parameters of silicon carbide single crystal material 135.0 via email in 1~3 business day valid
YS/T 15-1991 Thcikness determination for silicon epitaxial layer and difussion layer - Angle lap-stain method 90.0 via email in 1~3 business day superseded
GB/T 29850-2013 Test method for measuring compensation degree of silicon materials used for photovoltaic applications 120.0 via email in business day valid
GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry 140.0 via email in 1~3 business day valid
GB/T 30861-2014 Germanium substrate for solar cell 135.0 via email in 1~3 business day valid
GB/T 29852-2013 Test Method for Measuring Phosphorus, Arsenic and Antimony in Silicon Materials Used for Photovoltaic Applications by Secondary Ion Mass Spectrometry 110.0 via email in 1~3 business day valid
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