Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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Position: Search valid to be valid superseded to be superseded abolished to be abolished
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GB 12963-1991 60.0 via email in 1~3 business day superseded
YS/T 14-1991 45.0 via email in 1~3 business day abolished
GB/T 19199-2003 Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method 90.0 via email in 1~3 business day abolished
GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices 120.0 via email in 1~3 business day valid
GB 12962-1991 105.0 via email in 1~3 business day superseded
GB/T 12964-2003 Monocrystalline silicon polished wafers 150.0 via email in 1~3 business day valid
GB/T 29851-2013 Test method for measuring boron and aluminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry 120.0 via email in business day valid
GB/T 12963-2014 Electronic-grade polycrystalline silicon 90.0 via email in 1~3 business day valid
GB/T 12963-2009 Specification for Polycrystalline Silicon 40.0 via email in 1 business day superseded
GB/T 25074-2010 Solar-grade polycrystalline silicon 100.0 via email in 1~3 business day valid
YS/T 15-1991 Thcikness determination for silicon epitaxial layer and difussion layer - Angle lap-stain method 90.0 via email in 1~3 business day superseded
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning 180.0 via email in 1~3 business day valid
GB/T 29504-2013 300 mm monocrystalline silicon 110.0 via email in 1~3 business day valid
GB/T 12962-1996 Monocrystalline silicon 120.0 via email in 1~3 business day abolished
GB/T 26072-2010 Germanium single crystal for solar cell 130.0 via email in 1~3 business day valid
GB 2881-1991 Technical requirements for silicon metal 45.0 via email in 1~3 business day abolished
GB/T 12964-1996 Monocrystalline silicon polished wafers 135.0 via email in 1~3 business day abolished
SJ 20858-2002 Measuring methods for electrical parameters of silicon carbide single crystal material 135.0 via email in 1~3 business day valid
GB/T 29849-2013 Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry 160.0 via email in business day valid
YS/T 557-2006 Test method for bulk acoustic wave attenuation of piezoelectric lithium niobate crystals 105.0 via email in 1~3 business day valid
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