2026-3-18 10.6.5.91
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 47097-2026 Polished monocrystalline aluminum nitride wafers 270.0 via email in 1~3 business day to be valid,,2026-8-1
GB/T 30858-2025 Polished mono-crystalline sapphire substrate wafer 270.0 via email in 1~3 business day to be valid,,2026-5-1
GB/T 30856-2025 GaAs substrates for LED epitaxial chips 150.0 via email in 1~3 business day valid,,2026-2-1
GB/T 43885-2024 Silicon carbide epitaxial wafers 270.0 via email in 1~3 business day valid,,2024-11-1
GB/T 43662-2024 Patterned sapphire substrate 285.0 via email in 1~3 business day valid,,2024-10-1
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers 255.0 via email in 1~3 business day valid,,2023-10-1
GB/T 30652-2023 Trichlorosilane for silicon epitaxial 165.0 via email in 1~3 business day valid,,2024-3-1
GB/T 31092-2022 Monocrystalline sapphire bar 135.0 via email in 1~3 business day valid,,2023-7-1
GB/T 20229-2022 Gallium phosphide single crystal 200.0 via email in 1~3 business day valid,,2022-10-1
GB/T 20230-2022 Indium phosphide single crystal 255.0 via email in 1~3 business day valid,,2022-10-1
GB/T 20228-2021 Gallium arsenide single crystal 170.0 via email in 1~3 business day valid,,2021-12-1
GB/T 11094-2020 Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method 180.0 via email in 1~3 business day valid,,2021-8-1
YS/T 13-2015 High pure germanium tetrachloride 225.0 via email in 1~3 business day valid,,2015-10-1
GB/T 36706-2018 Polycrystalline indium phosphide 100.0 via email in 1~3 business day valid,,2019-6-1
YS/T 988-2014 Carboxyethyl-germanium sesquioxide 105.0 via email in 1~3 business day valid,,2015-4-1
DB44/T 1647-2015 LED modules for Downlights Interchangeability specifications via email in business day abolished2025-08-31,,2015-11-3
GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers 90.0 via email in 1~3 business day superseded,2026-2-1,2015-2-1
GB/T 30856-2014 GaAs substrates for LED epitaxial chips 220.0 via email in 1~3 business day superseded,2026-2-1,2015-4-1
GB/T 35308-2017 Epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell 220.0 via email in 1~3 business day valid,,2018-7-1
GB/T 30854-2014 Gallium nitride based epitaxial layer for LED lighting 370.0 via email in 1~5 business day valid,,2015-4-1
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GB/T 47097-2026 Polished monocrystalline aluminum nitride wafers 
  Issued on: 2026-01-28   Price(USD): 270.0
GB/T 30858-2025 Polished mono-crystalline sapphire substrate wafer 
  Issued on: 2025-10-31   Price(USD): 270.0
GB/T 30856-2025 GaAs substrates for LED epitaxial chips 
  Issued on: 2025-8-1   Price(USD): 150.0
GB/T 43885-2024 Silicon carbide epitaxial wafers 
  Issued on: 2024-4-25   Price(USD): 270.0
GB/T 43662-2024 Patterned sapphire substrate 
  Issued on: 2024-3-15   Price(USD): 285.0
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers 
  Issued on: 2023-03-17   Price(USD): 255.0
GB/T 30652-2023 Trichlorosilane for silicon epitaxial 
  Issued on: 2023-08-06   Price(USD): 165.0
GB/T 31092-2022 Monocrystalline sapphire bar 
  Issued on: 2022-12-30   Price(USD): 135.0
GB/T 20229-2022 Gallium phosphide single crystal 
  Issued on: 2022-03-09   Price(USD): 200.0
GB/T 20230-2022 Indium phosphide single crystal 
  Issued on: 2022-03-09   Price(USD): 255.0
GB/T 20228-2021 Gallium arsenide single crystal 
  Issued on: 2021-05-21   Price(USD): 170.0
GB/T 11094-2020 Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method 
  Issued on: 2020-09-29   Price(USD): 180.0
YS/T 13-2015 High pure germanium tetrachloride 
  Issued on: 2015-04-30   Price(USD): 225.0
GB/T 36706-2018 Polycrystalline indium phosphide 
  Issued on: 2018-09-17   Price(USD): 100.0
YS/T 988-2014 Carboxyethyl-germanium sesquioxide 
  Issued on: 2014-10-14   Price(USD): 105.0
DB44/T 1647-2015 LED modules for Downlights Interchangeability specifications 
  Issued on: 2015-08-03   Price(USD):
GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers 
  Issued on: 2014-07-24   Price(USD): 90.0
GB/T 30856-2014 GaAs substrates for LED epitaxial chips 
  Issued on: 2014-07-24   Price(USD): 220.0
GB/T 35308-2017 Epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell 
  Issued on: 2017-12-29   Price(USD): 220.0
GB/T 30854-2014 Gallium nitride based epitaxial layer for LED lighting 
  Issued on: 2014-07-24   Price(USD): 370.0
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