2025-12-5 10.1.6.65
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 46567.1-2025 Intelligent computing - Test method for memristor - Part 1: Basic characteristics 240.0 via email in 1~3 business day valid,,2025-10-31
GB/T 45722-2025 Semiconductor devices—Constant current electromigration test 270.0 via email in 1~3 business day valid,,2025-9-1
GB/T 45721.1-2025 Semiconductor devices—Stress migration test—Part 1: Copper stress migration test 435.0 via email in 1~5 business day valid,,2025-9-1
GB/T 45718-2025 Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers 315.0 via email in 1~5 business day valid,,2025-9-1
GB/T 45719-2025 Semiconductor devices—Hot carrier test on metal-oxide semiconductor(MOS) transistors 270.0 via email in 1~3 business day valid,,2025-9-1
GB/T 45716-2025 Semiconductor devices—Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs) 270.0 via email in 1~3 business day valid,,2025-9-1
T/CASAS 044-2024 High voltage high temperature high humidity reverse bias test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) via email in business day valid,,2024-11-19
T/CASAS 045-2024 Dynamic gate stress test method for silicon carbide metal-oxide semiconductor field effect transistor（SiC MOSFET） via email in business day valid,,2024-11-19
T/CASAS 043-2024 High temperature reverse bias test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) via email in business day valid,,2024-11-19
T/CASAS 046-2024 Dynamic reverse bias (DRB) test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) via email in business day valid,,2024-11-19
T/CASAS 042-2024 High temperature gate bias test method for silicon carbide metal oxide semiconductor filed effect transistors (SiC MOSFET) via email in business day valid,,2024-11-19
T/CASAS 033-2024 Switching dynamic test method for sillicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) power device via email in business day valid,,2024-11-19
T/CASAS 021-2024 Threshold voltage test method for silicon carbide metal-oxide semiconductor field effect transistor(SiC MOSFETs) via email in business day valid,,2024-11-19
DB32/T 4894-2024 Test method for performance of micro-electromechanical systems semiconductor gas sensor via email in business day valid,,2024-12-7
GB 4938-1985 Acceptance and reliability for discrete semiconductor devices 105.0 via email in 1~3 business day valid,,1985-11-1
GB/T 4937.35-2024 Semiconductor devices—Mechanical and climatic test methods—Part 35: Acoustic microscopy for plastic encapsulated electronic components 330.0 via email in 1~3 business day valid,,2024-7-1
GB/T 4937.34-2024 Semiconductor devices—Mechanical and climatic test methods—Part 34:Power cycling 210.0 via email in 1~3 business day valid,,2024-7-1
ZB N 05005-1988 via email in business day superseded,2000-1-1,1989-7-1
T/CIE 145-2022 Measurement method of radiation induced traps by deep level transient spectroscopy 225.0 via email in 1~3 business day valid,,
GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors 1275.0 via email in 1~5 business day valid,,2024-4-1
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GB/T 46567.1-2025 Intelligent computing - Test method for memristor - Part 1: Basic characteristics 
  Issued on: 2025-10-31   Price(USD): 240.0
GB/T 45722-2025 Semiconductor devices—Constant current electromigration test 
  Issued on: 2025-05-30   Price(USD): 270.0
GB/T 45721.1-2025 Semiconductor devices—Stress migration test—Part 1: Copper stress migration test 
  Issued on: 2025-05-30   Price(USD): 435.0
GB/T 45718-2025 Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers 
  Issued on: 2025-05-30   Price(USD): 315.0
GB/T 45719-2025 Semiconductor devices—Hot carrier test on metal-oxide semiconductor(MOS) transistors 
  Issued on: 2025-05-30   Price(USD): 270.0
GB/T 45716-2025 Semiconductor devices—Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs) 
  Issued on: 2025-05-30   Price(USD): 270.0
T/CASAS 044-2024 High voltage high temperature high humidity reverse bias test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 045-2024 Dynamic gate stress test method for silicon carbide metal-oxide semiconductor field effect transistor（SiC MOSFET） 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 043-2024 High temperature reverse bias test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 046-2024 Dynamic reverse bias (DRB) test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 042-2024 High temperature gate bias test method for silicon carbide metal oxide semiconductor filed effect transistors (SiC MOSFET) 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 033-2024 Switching dynamic test method for sillicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) power device 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 021-2024 Threshold voltage test method for silicon carbide metal-oxide semiconductor field effect transistor(SiC MOSFETs) 
  Issued on: 2024-11-19   Price(USD):
DB32/T 4894-2024 Test method for performance of micro-electromechanical systems semiconductor gas sensor 
  Issued on: 2024-11-07   Price(USD):
GB 4938-1985 Acceptance and reliability for discrete semiconductor devices 
  Issued on: 1985-02-06   Price(USD): 105.0
GB/T 4937.35-2024 Semiconductor devices—Mechanical and climatic test methods—Part 35: Acoustic microscopy for plastic encapsulated electronic components 
  Issued on: 2024-3-15   Price(USD): 330.0
GB/T 4937.34-2024 Semiconductor devices—Mechanical and climatic test methods—Part 34:Power cycling 
  Issued on: 2024-3-15   Price(USD): 210.0
ZB N 05005-1988  
  Issued on:   Price(USD):
T/CIE 145-2022 Measurement method of radiation induced traps by deep level transient spectroscopy 
  Issued on: 2022-12-31   Price(USD): 225.0
GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors 
  Issued on: 2023-9-7   Price(USD): 1275.0
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