2026-2-7 10.1.71.44
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 4937.39-2025 Semiconductor devices—Mechanical and climatic test methods—Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components 315.0 via email in 1~5 business day to be valid,,2026-7-1
GB/T 4937.40-2025 Semiconductor devices—Mechanical and climatic test methods—Part 40: Board level drop test method using a strain gauge 375.0 via email in 1~5 business day to be valid,,2026-7-1
GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices 255.0 via email in 1~3 business day to be valid,,2026-7-1
GB/T 4937.33-2025 Semiconductor devices—Mechanical and climatic test methods—Part 33: Accelerated moisture resistance—Unbiased autoclave 165.0 via email in 1~3 business day to be valid,,2026-7-1
GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38: Soft error test method for semiconductor devices with memory 225.0 via email in 1~3 business day to be valid,,2026-7-1
GB/T 4937.36-2025 Semiconductor devices—Mechanical and climatic test methods—Part 36:Acceleration，steady state 165.0 via email in 1~3 business day to be valid,,2026-7-1
GB/T 46567.1-2025 Intelligent computing - Test method for memristor - Part 1: Basic characteristics 240.0 via email in 1~3 business day valid,,2025-10-31
GB/T 4937.16-2025 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection(PIND) 270.0 via email in 1~3 business day to be valid,,2026-5-1
GB/T 45721.1-2025 Semiconductor devices—Stress migration test—Part 1: Copper stress migration test 435.0 via email in 1~5 business day valid,,2025-9-1
GB/T 45722-2025 Semiconductor devices—Constant current electromigration test 270.0 via email in 1~3 business day valid,,2025-9-1
GB/T 45719-2025 Semiconductor devices—Hot carrier test on metal-oxide semiconductor(MOS) transistors 270.0 via email in 1~3 business day valid,,2025-9-1
GB/T 45718-2025 Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers 315.0 via email in 1~5 business day valid,,2025-9-1
GB/T 45716-2025 Semiconductor devices—Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs) 270.0 via email in 1~3 business day valid,,2025-9-1
T/CASAS 044-2024 High voltage high temperature high humidity reverse bias test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) via email in business day valid,,2024-11-19
T/CASAS 045-2024 Dynamic gate stress test method for silicon carbide metal-oxide semiconductor field effect transistor（SiC MOSFET） via email in business day valid,,2024-11-19
T/CASAS 043-2024 High temperature reverse bias test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) via email in business day valid,,2024-11-19
T/CASAS 046-2024 Dynamic reverse bias (DRB) test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) via email in business day valid,,2024-11-19
T/CASAS 042-2024 High temperature gate bias test method for silicon carbide metal oxide semiconductor filed effect transistors (SiC MOSFET) via email in business day valid,,2024-11-19
T/CASAS 033-2024 Switching dynamic test method for sillicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) power device via email in business day valid,,2024-11-19
T/CASAS 021-2024 Threshold voltage test method for silicon carbide metal-oxide semiconductor field effect transistor(SiC MOSFETs) via email in business day valid,,2024-11-19
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GB/T 4937.39-2025 Semiconductor devices—Mechanical and climatic test methods—Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components 
  Issued on: 2025-12-31   Price(USD): 315.0
GB/T 4937.40-2025 Semiconductor devices—Mechanical and climatic test methods—Part 40: Board level drop test method using a strain gauge 
  Issued on: 2025-12-31   Price(USD): 375.0
GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices 
  Issued on: 2025-12-2   Price(USD): 255.0
GB/T 4937.33-2025 Semiconductor devices—Mechanical and climatic test methods—Part 33: Accelerated moisture resistance—Unbiased autoclave 
  Issued on: 2025-12-2   Price(USD): 165.0
GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38: Soft error test method for semiconductor devices with memory 
  Issued on: 2025-12-2   Price(USD): 225.0
GB/T 4937.36-2025 Semiconductor devices—Mechanical and climatic test methods—Part 36:Acceleration，steady state 
  Issued on: 2025-12-2   Price(USD): 165.0
GB/T 46567.1-2025 Intelligent computing - Test method for memristor - Part 1: Basic characteristics 
  Issued on: 2025-10-31   Price(USD): 240.0
GB/T 4937.16-2025 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection(PIND) 
  Issued on: 2025-10-31   Price(USD): 270.0
GB/T 45721.1-2025 Semiconductor devices—Stress migration test—Part 1: Copper stress migration test 
  Issued on: 2025-05-30   Price(USD): 435.0
GB/T 45722-2025 Semiconductor devices—Constant current electromigration test 
  Issued on: 2025-05-30   Price(USD): 270.0
GB/T 45719-2025 Semiconductor devices—Hot carrier test on metal-oxide semiconductor(MOS) transistors 
  Issued on: 2025-05-30   Price(USD): 270.0
GB/T 45718-2025 Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers 
  Issued on: 2025-05-30   Price(USD): 315.0
GB/T 45716-2025 Semiconductor devices—Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs) 
  Issued on: 2025-05-30   Price(USD): 270.0
T/CASAS 044-2024 High voltage high temperature high humidity reverse bias test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 045-2024 Dynamic gate stress test method for silicon carbide metal-oxide semiconductor field effect transistor（SiC MOSFET） 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 043-2024 High temperature reverse bias test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 046-2024 Dynamic reverse bias (DRB) test method for silicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 042-2024 High temperature gate bias test method for silicon carbide metal oxide semiconductor filed effect transistors (SiC MOSFET) 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 033-2024 Switching dynamic test method for sillicon carbide metal-oxide semiconductor filed effect transistors (SiC MOSFET) power device 
  Issued on: 2024-11-19   Price(USD):
T/CASAS 021-2024 Threshold voltage test method for silicon carbide metal-oxide semiconductor field effect transistor(SiC MOSFETs) 
  Issued on: 2024-11-19   Price(USD):
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