2026-1-31 10.6.7.32
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 16515-2023 Potentiometers for use in electronic equipment—Part 5: Sectional specification—Single-turn rotary low-power wirewound and non-wirewound potentiometers 400.0 via email in 1~3 business day valid,,2024-1-1
GB/T 21039.1-2007 Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specification 180.0 via email in 1~3 business day valid,,2007-11-1
SJ 20957-2006 General specification for large power semiconductor laser diode array 300.0 via email in 1~3 business day valid,,2006-12-30
GB/T 6589-2002 Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (e 180.0 via email in 1~3 business day valid,,2003-5-1
SJ 50033/150-2002 Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2DW230~236 120.0 via email in 1~3 business day valid,,2003-3-1
SJ 50033/153-2002 Semiconductor discrete devices Detail specification for type 2CK141 microwave switch diode 100.0 via email in 1~3 business day valid,,2003-3-1
SJ 50033/161-2002 Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210~251 120.0 via email in 1~3 business day valid,,2003-3-1
SJ 50033/152-2002 Semiconductor discrete devices Detail specification for type 2CK140 microwave switch diode 120.0 via email in 1~3 business day valid,,2003-3-1
SJ 50033/151-2002 Semiconductor discrete device Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 150.0 via email in 1~3 business day valid,,2003-3-1
GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlle 150.0 via email in 1~3 business day valid,,2001-10-1
GB/T 4023-1997 Semiconductor devices Discrete devices and integrated circuits Part 2：Rectifier diodes 570.0 via email in 1~3 business day abolished2017-01-01,2017-1-1,1998-9-1
GB/T 15177-1994 Blank detail specification for mircowave detectors and mixer diodes 160.0 via email in 1~3 business day abolished2005-10-14,,1995-4-1
GB/T 15137-1994 Blank detail specification for Gunn diodes 410.0 via email in 1~3 business day abolished2005-10-14 ,,1995-4-1
GB/T 15178-1994 Blank detail specification for variable capacitance diodes 410.0 via email in 1~3 business day abolished2005-10-14 ,,1995-4-1
GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes 150.0 via email in 1~3 business day abolished2014-08-15,2014-8-15,1994-10-1
QJ 2362-1992 Screening Specification for Step Recovery Diodes 75.0 via email in 1~3 business day valid,,1992-12-1
GB/T 13066-1991 Blank detail specification for unijunction transistors 190.0 via email in 1~3 business day abolished2005-10-14,,1992-3-1
GB/T 13063-1991 Blank detail specification for current-regulator and current-reference diodes 190.0 via email in 1~3 business day abolished2005-10-14,,1992-3-1
GB/T 12562-1990 Blank detail specification for PIN diodes 410.0 via email in 1~3 business day abolished2005-10-14 ,,1991-10-1
GB 9595-1988 Detail specification for electronic component--Semiconductor integrated circuit--cw574cs voltage stabilizer for electronic tuner 150.0 via email in 1~3 business day superseded,1997-1-1,1989-3-1
Previous Page     Next Page



Code of China
Search

GB/T 16515-2023 Potentiometers for use in electronic equipment—Part 5: Sectional specification—Single-turn rotary low-power wirewound and non-wirewound potentiometers 
  Issued on: 2023-9-7   Price(USD): 400.0
GB/T 21039.1-2007 Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specification 
  Issued on: 2007-6-29   Price(USD): 180.0
SJ 20957-2006 General specification for large power semiconductor laser diode array 
  Issued on: 2006-8-7   Price(USD): 300.0
GB/T 6589-2002 Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (e 
  Issued on: 2002-12-4   Price(USD): 180.0
SJ 50033/150-2002 Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2DW230~236 
  Issued on: 2002-10-30   Price(USD): 120.0
SJ 50033/153-2002 Semiconductor discrete devices Detail specification for type 2CK141 microwave switch diode 
  Issued on: 2002-10-30   Price(USD): 100.0
SJ 50033/161-2002 Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210~251 
  Issued on: 2002-10-30   Price(USD): 120.0
SJ 50033/152-2002 Semiconductor discrete devices Detail specification for type 2CK140 microwave switch diode 
  Issued on: 2002-10-30   Price(USD): 120.0
SJ 50033/151-2002 Semiconductor discrete device Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 
  Issued on: 2002-10-30   Price(USD): 150.0
GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlle 
  Issued on: 2000-10-17   Price(USD): 150.0
GB/T 4023-1997 Semiconductor devices Discrete devices and integrated circuits Part 2：Rectifier diodes 
  Issued on: 1997-10-7   Price(USD): 570.0
GB/T 15177-1994 Blank detail specification for mircowave detectors and mixer diodes 
  Issued on: 1994-08-20   Price(USD): 160.0
GB/T 15137-1994 Blank detail specification for Gunn diodes 
  Issued on: 1994-06-25   Price(USD): 410.0
GB/T 15178-1994 Blank detail specification for variable capacitance diodes 
  Issued on: 1994-08-20   Price(USD): 410.0
GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes 
  Issued on: 1993-1-2   Price(USD): 150.0
QJ 2362-1992 Screening Specification for Step Recovery Diodes  
  Issued on: 1992-03-05   Price(USD): 75.0
GB/T 13066-1991 Blank detail specification for unijunction transistors 
  Issued on: 1991-07-06   Price(USD): 190.0
GB/T 13063-1991 Blank detail specification for current-regulator and current-reference diodes 
  Issued on: 1991-07-06   Price(USD): 190.0
GB/T 12562-1990 Blank detail specification for PIN diodes 
  Issued on: 1990-01-02   Price(USD): 410.0
GB 9595-1988 Detail specification for electronic component--Semiconductor integrated circuit--cw574cs voltage stabilizer for electronic tuner 
  Issued on:   Price(USD): 150.0
About Us   |    Contact Us   |    Terms of Service   |    Privacy   |    Cancellation & Refund Policy   |    Payment
Contact us via WeChat
Tel: +86-10-8572 5655 | Fax: +86-10-8581 9515 | Email: coc@codeofchina.com | QQ: 3680948734
Copyright: Beijing COC Tech Co., Ltd. 2008-2040