Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB 7577-1987 180.0 via email in 1~3 business day superseded
GB/T 7577-1996 detail specification for case-rated bipolar transistors for low-frequency amplification 140.0 via email in 1~3 business day valid
GB/T 11590-1989 International data transmission services and optional user facilities in public data networks 90.0 via email in 1~3 business day abolished
GB 9511-1988 Detail specification for electronic components--Case-rated transistor for type 3DD401 silicon NPN for low frequency amplification 450.0 via email in 1~3 business day valid
SJ 50033/170-2007 semiconductro discrete devices detail specification for type 3da516 silicon microwave pulse power transistor 150.0 via email in 1~3 business day valid
GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 200.0 via email in 1~3 business day valid
SJ 50033/172-2007 semiconductro discrete devices detail specification for type 3da519 silicon microwave pulse power transistor 150.0 via email in 1~3 business day valid
GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) 710.0 via email in 1~3 business day valid
GB 9507-1988 Detail specification for electronic components--Ambient-rated transistor for type 3CG844 silicon PNP for high frequency amplification 450.0 via email in 1~3 business day valid
GB 9509-1988 410.0 via email in 1~3 business day superseded
SJ 797-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG161 105.0 via email in 1~3 business day valid
SJ 934-1975 Detail specification for silicon NPN low frequency high power high reversse voltage transistors Type 3DD100 60.0 via email in 1~3 business day valid
SJ 50033/166-2004 Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor 135.0 via email in 1~3 business day valid
SJ 50033/168-2004 Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor 150.0 via email in 1~3 business day valid
SJ/T 11227-2000 Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 165.0 via email in 1~3 business day valid
SJ 50033/167-2004 Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor 135.0 via email in 1~3 business day valid
GB/T 6217-1998 Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification 200.0 via email in 1~3 business day valid
GB 9520-1988 450.0 via email in 1~3 business day superseded
GB 6353-1986 Detail specification for electronic component--Forward AGC low-noise transistor for high-frequency amplification--Type 3 DG79 610.0 via email in 1~3 business day valid
GB/T 6571-1995 Semiconductor devices - Discrete devices - Part 3 : Signal(including switching)and regulator diodes 500.0 via email in 1~3 business day valid
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