Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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GB 9522-1988 Detail specification for electronic components--Ambie-nt-rated transistor for type 3DG1815 silicon NPN for high frequency amplification 490.0 via email in 1~3 business day valid
GB 6356-1986 Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CX201A, 3CX201B, 3CX201C 490.0 via email in 1~3 business day valid
SJ/T 11227-2000 Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 165.0 via email in 1~3 business day valid
GB 7577-1987 180.0 via email in 1~3 business day superseded
GB/T 4586-1994 Semiconductor devices-Discrete devices-Part 8: Field-effect transistors 500.0 via email in 1~3 business day valid
GB 7147-1987 Detail specification for electronic components--Ambint-rated bipolar transistors for high frequency amplification type 3DG80 450.0 via email in 1~3 business day valid
SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 150.0 via email in 1~3 business day valid
SJ 50033/167-2004 Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor 135.0 via email in 1~3 business day valid
SJ 934-1975 Detail specification for silicon NPN low frequency high power high reversse voltage transistors Type 3DD100 60.0 via email in 1~3 business day valid
SJ 50033/166-2004 Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor 135.0 via email in 1~3 business day valid
GB 7150-1987 Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK107A, 3DK107B 450.0 via email in 1~3 business day valid
SJ 50033/170-2007 semiconductro discrete devices detail specification for type 3da516 silicon microwave pulse power transistor 150.0 via email in 1~3 business day valid
GB/T 6217-1998 Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification 200.0 via email in 1~3 business day valid
GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 200.0 via email in 1~3 business day valid
SJ 50033/163-2003 Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors 150.0 via email in 1~3 business day valid
GB/T 7577-1996 detail specification for case-rated bipolar transistors for low-frequency amplification 140.0 via email in 1~3 business day valid
SJ 797-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG161 105.0 via email in 1~3 business day valid
SJ/T 11225-2000 Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor 165.0 via email in 1~3 business day valid
GB 7149-1987 Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK105A, 3DK105B 450.0 via email in 1~3 business day valid
GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) 710.0 via email in 1~3 business day valid
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