Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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SJ 2215.14-1982 Method of measurement for input-to-output isolation voltage of semiconductor photocouplers 30.0 via email in 1~3 business day abolished
YD/T 1826-2008 Network Security Emergency Handling Team Construct Guidelines 150.0 via email in 1~3 business day valid
SJ 2215.12-1982 Method of measurement for input-to-output capacitance of semiconductor photocouplers 30.0 via email in 1~3 business day superseded
SJ 50033/93-1995 Semiconductor discrete devices - Detail specification for Type 3DG142 NPN silicon high-frequency low-noise low-power transistor 150.0 via email in 1~3 business day valid
SJ/T 10348-1993 Detail specification for zinc oxide varistors for over-voltage protection for Type MYG2 225.0 via email in 1~3 business day valid
YD/T 996-1998 Management Arrangement for TechnologicalDocuments in Posts and Telecommunication’Industry 195.0 via email in 1~3 business day valid
SJ/T 10432-1993 Resistance type humidity sensors for use in electronic equipment-Part 1:General specification 210.0 via email in 1~3 business day valid
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes 30.0 via email in 1~3 business day superseded
SJ 2215.9-1982 Method of measurement for reverse cut-off current of semiconductor photocouplers transistors 30.0 via email in 1~3 business day superseded
YD/T 638.13-1993 Type Designation for Accessory Equipments of Telephone Exchange 60.0 via email in 1~3 business day valid
YD/T 638.11-1993 Type Designation for Digital Communication Equipment 60.0 via email in 1~3 business day valid
SJ 50033/92-1995 Semiconductor discrete devices-Detail specification for Type 3CD100 low-frequency and high-power transistor 180.0 via email in 1~3 business day valid
SJ 50033/94-1995 Semiconductor discrete devices - Detail specification for Type 3DG143 NPN silicon high-frequency low-noise low-power transistor 150.0 via email in 1~3 business day valid
SJ 2214.9-1982 Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors 30.0 via email in 1~3 business day abolished
SJ 2215.7-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor photocouplers (diodes) 15.0 via email in 1~3 business day superseded
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes 15.0 via email in 1~3 business day abolished
SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes) 15.0 via email in 1~3 business day superseded
SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors 15.0 via email in 1~3 business day abolished
SJ 50033/95-1995 Semiconductor discrete devices-Detail specification for Type 3DG144 NPN silicon high-frequency low-noise low-power transistor 180.0 via email in 1~3 business day valid
SJ 2028.2-1983 Positive temperature coefficient thermistors used for temperature control for Type MZ61 120.0 via email in 1~3 business day valid
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