2025-12-6 10.1.6.65
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
T/INFOCA 8-2022 Quality of Experience (QoE) evaluation method for mobile live broadcast audience via email in business day valid,,2022-10-31
YD/T 638.11-1993 Type Designation for Digital Communication Equipment 100.0 via email in 1~3 business day valid,,1994-2-1
SJ 1553-1980 General specification for negative temperature coefficient thermistors for temperature measurement 544.0 via email in 1~3 business day superseded,1987-8-1,1980-10-1
SJ/T 11048-1996 Detailed specifications for electronic components - Varistors for surge suppression - MYG1 varistors for over-voltage protection - Assessment level E (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ 50033.54-1994 Semiconductor discrete device - Detail specification for type CS0532 GaAs microwave power field effect transistor 180.0 via email in 1~3 business day valid,,1994-12-1
SJ/Z 9011.4-1987 Measurement of photosensitive devices--Part 4: Methods of measurement for photomultipliers 220.0 via email in 1~3 business day valid,,1987-9-14
SJ 50033/61-1995 Semiconductor discrete device - Detail specification for Type 3DK6547 high-voltage and power switching transistor 150.0 via email in 1~3 business day valid,,1995-12-1
SJ 2028-1982 Generic specification for directly heated positive temperature coefficient thermistors 180.0 via email in 1~3 business day abolished2017-05-12 ,,1982-9-1
SJ 2215.5-1982 Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes) 30.0 via email in 1~3 business day superseded,2015-10-1,1983-7-1
SJ 50033/94-1995 Semiconductor discrete devices - Detail specification for Type 3DG143 NPN silicon high-frequency low-noise low-power transistor 150.0 via email in 1~3 business day valid,,1996-10-1
SJ 50033.51-1994 Semiconductor discreted devices - Detail specification for type CS0558 GaAs microwave dual gate FET 180.0 via email in 1~3 business day valid,,1994-12-1
SJ 1560-1980 Negative temperature coefficient thermistors used as voltage regulators for Type MF21 and MF22 220.0 via email in 1~3 business day abolished2010-01-20 ,,1980-10-1
SJ 50033/60-1995 Semiconductor discrete device-Detail specification for Type 3DK40 power switching transistor 160.0 via email in 1~3 business day valid,,1995-12-1
SJ 1555-1980 Bead thermistors for Type MF52 180.0 via email in 1~3 business day abolished2010-02-01 ,,1980-10-1
SJ/Z 9011.1-1987 Measurement of photosensitive devices - Part 1: Basic recommendations 360.0 via email in 1~3 business day valid,,1987-9-14
SJ/Z 9011.3-1987 Measurement of photosensitive devices - Part 3: Methods of measurement for photoconductive cells for use in the visible spectrum 150.0 via email in 1~3 business day valid,,1987-9-14
SJ 50033/96-1995 Semiconductor discrete devices-Detail specification for Type 3DG216 NPN silicon low-power difference matched-pair transistor 150.0 via email in 1~3 business day valid,,1996-10-1
SJ 50033/99-1995 Semiconductor optoelectronic devices-Detail specification for o/G double colour light emitting diode for Type GF511 150.0 via email in 1~3 business day valid,,1996-10-1
SJ 50033/93-1995 Semiconductor discrete devices - Detail specification for Type 3DG142 NPN silicon high-frequency low-noise low-power transistor 150.0 via email in 1~3 business day valid,,1996-10-1
SJ 1887-1981 Major technical parameters for thermistors 180.0 via email in 1~3 business day abolished2010-02-01 ,,1982-7-1
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T/INFOCA 8-2022 Quality of Experience (QoE) evaluation method for mobile live broadcast audience 
  Issued on: 2022-10-31   Price(USD):
YD/T 638.11-1993 Type Designation for Digital Communication Equipment 
  Issued on: 1993-8-17   Price(USD): 100.0
SJ 1553-1980 General specification for negative temperature coefficient thermistors for temperature measurement 
  Issued on: 1980-02-04   Price(USD): 544.0
SJ/T 11048-1996 Detailed specifications for electronic components - Varistors for surge suppression - MYG1 varistors for over-voltage protection - Assessment level E (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ 50033.54-1994 Semiconductor discrete device - Detail specification for type CS0532 GaAs microwave power field effect transistor 
  Issued on: 1994-9-30   Price(USD): 180.0
SJ/Z 9011.4-1987 Measurement of photosensitive devices--Part 4: Methods of measurement for photomultipliers 
  Issued on: 1987-09-14   Price(USD): 220.0
SJ 50033/61-1995 Semiconductor discrete device - Detail specification for Type 3DK6547 high-voltage and power switching transistor 
  Issued on: 1995-5-25   Price(USD): 150.0
SJ 2028-1982 Generic specification for directly heated positive temperature coefficient thermistors 
  Issued on: 1982-01-30   Price(USD): 180.0
SJ 2215.5-1982 Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes) 
  Issued on: 1982-11-30   Price(USD): 30.0
SJ 50033/94-1995 Semiconductor discrete devices - Detail specification for Type 3DG143 NPN silicon high-frequency low-noise low-power transistor 
  Issued on: 1996-6-14   Price(USD): 150.0
SJ 50033.51-1994 Semiconductor discreted devices - Detail specification for type CS0558 GaAs microwave dual gate FET 
  Issued on: 1994-9-30   Price(USD): 180.0
SJ 1560-1980 Negative temperature coefficient thermistors used as voltage regulators for Type MF21 and MF22 
  Issued on: 1980-02-04   Price(USD): 220.0
SJ 50033/60-1995 Semiconductor discrete device-Detail specification for Type 3DK40 power switching transistor 
  Issued on: 1995-05-25   Price(USD): 160.0
SJ 1555-1980 Bead thermistors for Type MF52 
  Issued on: 1980-02-04   Price(USD): 180.0
SJ/Z 9011.1-1987 Measurement of photosensitive devices - Part 1: Basic recommendations 
  Issued on: 1987-9-14   Price(USD): 360.0
SJ/Z 9011.3-1987 Measurement of photosensitive devices - Part 3: Methods of measurement for photoconductive cells for use in the visible spectrum 
  Issued on: 1987-9-14   Price(USD): 150.0
SJ 50033/96-1995 Semiconductor discrete devices-Detail specification for Type 3DG216 NPN silicon low-power difference matched-pair transistor 
  Issued on: 1996-06-14   Price(USD): 150.0
SJ 50033/99-1995 Semiconductor optoelectronic devices-Detail specification for o/G double colour light emitting diode for Type GF511 
  Issued on: 1996-06-14   Price(USD): 150.0
SJ 50033/93-1995 Semiconductor discrete devices - Detail specification for Type 3DG142 NPN silicon high-frequency low-noise low-power transistor 
  Issued on: 1996-6-14   Price(USD): 150.0
SJ 1887-1981 Major technical parameters for thermistors 
  Issued on: 1981-12-07   Price(USD): 180.0
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