Standard No.:	GB/T 1551-2009
English Name:	Test method for measuring resistivity of monocrystal silicon
Chinese Name:	硅单晶电阻率测定方法
Chinese Classification:	H80    Semimetal and semiconductor material in general
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Issued by:	AQSIQ; SAC
Issued on:	2009-10-30
Implemented on:	2010-6-1
Status:	superseded
Superseded by:	GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
Superseded on:	2021-12-1
Superseding:	GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
Language:	English
File Format:	PDF
Word Count:	12000 words
Price(USD):	360.0
Delivery:	via email in 1~3 business day

本方法规定了用直排四探针法测量硅单晶电阻率的方法。
本方法适用于测量试样厚度和从试样边缘与任一探针端点的最近距离二者均大于探针间距的4倍的硅单晶体电阻率以及测量直径大于探针间距10倍、厚度小于探针间距4倍的硅单晶圆片的电阻率。