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Position: Chinese Standard in English/GB/T 37051-2018
GB/T 37051-2018   Test method for determination of crystal defect density in PV silicon ingot and wafer (English Version)
Standard No.: GB/T 37051-2018 Status:valid remind me the status change
Language:English File Format:PDF
Word Count: 5500 words Price(USD):160.00 remind me the price change
Implemented on:2019-4-1 Delivery: via email in 1~3 business day
Standard No.: GB/T 37051-2018
English Name: Test method for determination of crystal defect density in PV silicon ingot and wafer
Chinese Name: 太阳能级多晶硅锭、硅片晶体缺陷密度测定方法
Chinese Classification: H80    Semimetal and semiconductor material in general
Professional Classification: GB    National Standard
ICS Classification: 29.045 29.045    Semiconducting materials 29.045
Issued on: 2018-12-28
Implemented on: 2019-4-1
Status: valid
Language: English
File Format: PDF
Word Count: 5500 words
Price(USD): 160.00
Delivery: via email in 1~3 business day
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