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Position: Chinese Standard in English/GB/T 37051-2018 |
GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer (English Version) | |||
Standard No.: | GB/T 37051-2018 | Status: | valid remind me the status change |
Language: | English | File Format: | |
Word Count: | 5500 words | Price(USD): | 160.00 remind me the price change |
Implemented on: | 2019-4-1 | Delivery: | via email in 1~3 business day |
Standard No.: | GB/T 37051-2018 |
English Name: | Test method for determination of crystal defect density in PV silicon ingot and wafer |
Chinese Name: | 太阳能级多晶硅锭、硅片晶体缺陷密度测定方法 |
Chinese Classification: | H80 Semimetal and semiconductor material in general |
Professional Classification: | GB National Standard |
ICS Classification: | 29.045 Semiconducting materials |
Issued on: | 2018-12-28 |
Implemented on: | 2019-4-1 |
Status: | valid |
Language: | English |
File Format: | |
Word Count: | 5500 words |
Price(USD): | 160.00 |
Delivery: | via email in 1~3 business day |
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Keywords: | ||
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