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International Standard List: Semiconducting materials

GB/T 29852-2013 Test Method for Measuring Phosphorus, Arsenic and Antimony in Silicon Materials Used for Photovoltaic Applications by Secondary Ion Mass Spectrometry 
  Issued on: 2013-11-12   Translation Price(USD): 110.0
GB/T 29849-2013 Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry 
  Issued on: 2013-11-12   Translation Price(USD): 160.0
GB/T 29851-2013 Test method for measuring boron and aluminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry 
  Issued on: 2013-11-12   Translation Price(USD): 120.0
GB/T 29507-2013 Test method for measuring flatness, thickness and total thickness vsriation on silicon wafers. Automated non-contact scanning 
  Issued on: 2013-05-09   Translation Price(USD): 260.0
GB/T 29504-2013 300 mm monocrystalline silicon 
  Issued on: 2013-5-9   Translation Price(USD): 120.0
GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices 
  Issued on: 2013-5-9   Translation Price(USD): 140.0
GB/T 29506-2013 300 mm polished monocrystalline silicon wafers 
  Issued on: 2013-5-9   Translation Price(USD): 160.0
GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer 
  Issued on: 2013-5-9   Translation Price(USD): 430.0
GB/T 29055-2012 Multi-crystalline silicon wafer for solar cell 
  Issued on: 2012-12-31   Translation Price(USD): 120.0
GB/T 29054-2012 Solar-grade casting multi-crystalline silicon brick 
  Issued on: 2012-12-31   Translation Price(USD): 120.0
GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy 
  Issued on: 2012-12-31   Translation Price(USD): 270.0
YS/T 838-2012 Cadmium Telluride 
  Issued on: 2012-11-7   Translation Price(USD): 210.0
YS/T 792-2012 Carbon-carbon composites crucible used in single crystal furnace 
  Issued on: 2012-11-7   Translation Price(USD): 180.0
YS/T 43-2011 High-purity arsenic 
  Issued on: 2011-12-20   Translation Price(USD): 120.0
GB/T 26069-2010 Specification for silicon annealed wafers 
  Issued on: 2011-1-10   Translation Price(USD): 180.0
GB/T 26072-2010 Germanium single crystal for solar cell 
  Issued on: 2011-1-10   Translation Price(USD): 120.0
GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells 
  Issued on: 2011-1-10   Translation Price(USD): 180.0
GB/T 26066-2010 Practice for shallow etch pit detection on silicon 
  Issued on: 2011-1-1   Translation Price(USD): 120.0
GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance 
  Issued on: 2011-1-10   Translation Price(USD): 390.0
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 
  Issued on: 2011-1-10   Translation Price(USD): 180.0
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