| Title |
Standard No. |
Implemented On |
| Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specification | GB/T 21039.1-2007 | 2007-11-1 |
| General specification for large power semiconductor laser diode array | SJ 20957-2006 | 2006-12-30 |
| Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (e | GB/T 6589-2002 | 2003-5-1 |
| Semiconductor discrete device Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 | SJ 50033/151-2002 | 2003-3-1 |
| Semiconductor discrete devices Detail specification for type 2CK141 microwave switch diode | SJ 50033/153-2002 | 2003-3-1 |
| Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2DW230~236 | SJ 50033/150-2002 | 2003-3-1 |
| Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210~251 | SJ 50033/161-2002 | 2003-3-1 |
| Semiconductor discrete devices Detail specification for type 2CK140 microwave switch diode | SJ 50033/152-2002 | 2003-3-1 |
| Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlle | GB/T 6588-2000 | 2001-10-1 |
| Semiconductor devices Discrete devices and integrated circuits Part 2：Rectifier diodes | GB/T 4023-1997 | 1998-9-1 |
| Blank detail specification for mircowave detectors and mixer diodes | GB/T 15177-1994 | 1995-4-1 |
| test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes | GB/T 14863-1993 | 1994-10-1 |
| Screening Specification for Step Recovery Diodes | QJ 2362-1992 | 1992-12-1 |
| Blank detail specification for current-regulator and current-reference diodes | GB/T 13063-1991 | 1992-3-1 |
| Blank detail specification for unijunction transistors | GB/T 13066-1991 | 1992-3-1 |
| Detail specification for electronic component--Semiconductor integrated circuit--cw574cs voltage stabilizer for electronic tuner | GB 9595-1988 | 1989-3-1 |
| Detail specification for electronic component--Silicon switching diodes for types 2CK111 2CK112 and 2CK113 | GB 9524-1988 | 1989-2-1 |
| Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2cc23 and 2cc28 | GB 9527-1988 | 1989-2-1 |
| Detail specification for electronic component--Silicon switching diodes for types 2CK111 2CK112 and 2CK113 | GB 9525-1988 | 1989-2-1 |
| Detail specification for electronic component--Silicon frequency modulated variable capacitance diodes for types 2CC24 and 2CC29 | GB 9529-1988 | 1989-2-1 |
| Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2CC22 and 2CC27 | GB 9526-1988 | 1989-2-1 |
| Detail specification for electronic components--Switching rectifier diodes for types 2CZ201, 2CZ202 and 2CZ203 | GB 7152-1987 | 1987-9-1 |
| Blank detail specification for general purpose signal and/or switching semiconductor diodes | GB 6588-1986 | 1987-7-1 |
| Detail specification for electronic component--Glass passivated high voltage rectifier silicon stack for types 2CL61, 2CL62, 2CL63, 2CL64, 2CL65, 2CL66, 2CL67, 2CL68 | GB 6802-1986 | 1987-7-1 |
| Measuring methods for low-power signal diodes, voltage reference diodes and voltage regulator diodes | GB 6571-1986 | 1987-7-1 |
