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Chinese National Standard List: Semiconductor diode

Title Standard No. Implemented On
Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specificationGB/T 21039.1-20072007-11-1
General specification for large power semiconductor laser diode arraySJ 20957-20062006-12-30
Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (eGB/T 6589-20022003-5-1
Semiconductor discrete device Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18SJ 50033/151-20022003-3-1
Semiconductor discrete devices Detail specification for type 2CK141 microwave switch diodeSJ 50033/153-20022003-3-1
Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2DW230~236SJ 50033/150-20022003-3-1
Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210~251SJ 50033/161-20022003-3-1
Semiconductor discrete devices Detail specification for type 2CK140 microwave switch diodeSJ 50033/152-20022003-3-1
Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlleGB/T 6588-20002001-10-1
Semiconductor devices Discrete devices and integrated circuits Part 2：Rectifier diodesGB/T 4023-19971998-9-1
Blank detail specification for mircowave detectors and mixer diodesGB/T 15177-19941995-4-1
test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodesGB/T 14863-19931994-10-1
Screening Specification for Step Recovery Diodes QJ 2362-19921992-12-1
Blank detail specification for current-regulator and current-reference diodesGB/T 13063-19911992-3-1
Blank detail specification for unijunction transistorsGB/T 13066-19911992-3-1
Detail specification for electronic component--Silicon switching diodes for types 2CK111 2CK112 and 2CK113GB 9524-19881989-2-1
Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2cc23 and 2cc28GB 9527-19881989-2-1
Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2CC22 and 2CC27GB 9526-19881989-2-1
Detail specification for electronic components--Switching rectifier diodes for types 2CZ201, 2CZ202 and 2CZ203GB 7152-19871987-9-1
Blank detail specification for general purpose signal and/or switching semiconductor diodesGB 6588-19861987-7-1
Detail specification for electronic component--Glass passivated high voltage rectifier silicon stack for types 2CL61, 2CL62, 2CL63, 2CL64, 2CL65, 2CL66, 2CL67, 2CL68GB 6802-19861987-7-1
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