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| Position: Chinese Standard in English/GB/T 14863-1993 |
| GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes (English Version) | |||
| Standard No.: | GB/T 14863-1993 | Status: | superseded remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 5000 words | Translation Price(USD): | 150.0 remind me the price change |
| Implemented on: | 1994-10-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | GB/T 14863-1993 |
| English Name: | test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes |
| Chinese Name: | 用栅控和非栅控二极管的电压-电容关系测定硅外延层中净载流子浓度的标准方法 |
| Chinese Classification: | L41 Semiconductor diode |
| Professional Classification: | GB National Standard |
| Source Content Issued by: | AQSIQ |
| Issued on: | 1993-1-2 |
| Implemented on: | 1994-10-1 |
| Status: | superseded |
| Superseded by: | GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes |
| Superseded on: | 2014-8-15 |
| Abolished on: | 2014-08-15 |
| Target Language: | English |
| File Format: | |
| Word Count: | 5000 words |
| Translation Price(USD): | 150.0 |
| Delivery: | via email in 1~3 business day |