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Chinese National Standard Category: Metal nondestructive testing method

English Title: Test method for detection of oxidation induced defects in polished silicon wafers
Chinese Title: 硅抛光片氧化诱生缺陷的检验方法
Standard No.: GB/T 4058-1995
Category No.: H26
Issued by: China State Bureau of Technical Supervision
Issued on: 1995-04-18
Implemented on:
Status: superseded
Superseded by:GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
Superseded on:2010-6-1
Abolished on:2010-06-01
Superseding:GB 4058-1983
GB 6622-1986 Detects of swirls and striations in chemically polished silicon wafers
GB 6623-1986 Standard method for measuring the surface O. S. F of polished silicon wafers
Word Count:5000 words
Similar Standards: DB32/T 4485-2023   GB/T 14143-1993   GB/T 4058-1995   GB 246-1982   SDJ 67-1983   T/CIRA 14-2020   GB/T 242-1982   GB/T 3310-2023   NB/T 47013.14-2023   NB/T 47013.11-2023   GB/T 11260-2023   GB/T 42662-2023   GB/T 42673-2023   GB/T 42664-2023   GB/T 20490-2023   GB/T 42677-2023   GB/T 41966-2022   GB/T 4162-2022   GB/T 40791-2021   GB/T 40385-2021  
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