Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
LoginRegister
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 13389-2014 410.0 via email in 1~5 business day valid
GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single crystal and cutting wafer 180.0 via email in 1~3 business day valid
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption 150.0 via email in 1~3 business day valid
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge 150.0 via email in 1~3 business day valid
YS/T 223-1996 Selenium 105.0 via email in 1~3 business day abolished
GB/T 25076-2010 Monocrystalline silicon of solar cell 150.0 via email in 1~3 business day valid
YS/T 23-1992 Thickness determination for silicon epitaxial layers - Stacking fault method 60.0 via email in 1~3 business day superseded
GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells 180.0 via email in 1~3 business day valid
GB/T 19199-2003 Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method 90.0 via email in 1~3 business day abolished
GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices 120.0 via email in 1~3 business day valid
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array 180.0 via email in 1~3 business day valid
GB/T 12964-2003 Monocrystalline silicon polished wafers 150.0 via email in 1~3 business day valid
GB/T 29851-2013 Test method for measuring boron and aluminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry 120.0 via email in business day valid
GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers 180.0 via email in 1~3 business day valid
GB/T 12963-2014 Electronic-grade polycrystalline silicon 95.0 via email in 1~3 business day valid
GB/T 12963-2009 Specification for Polycrystalline Silicon 40.0 via email in 1 business day superseded
GB/T 20230-2006 Indium phosphide single crystal 90.0 via email in 1~3 business day valid
GB/T 17170-1997 Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method 90.0 via email in 1~3 business day abolished
YS/T 792-2012 Carbon-carbon composites crucible used in single crystal furnace 180.0 via email in 1~3 business day valid
GB/T 30868-2014 GB/T 30868-2014 90.0 via email in 1~3 business day valid
About Us | Contact Us | Payment
Tel: +86-10-8572 5655 | Fax: +86-10-8581 9515 | Email: coc@codeofchina.com | Send me a messageQQ: 672269886
Copyright: Codeofchina Inc 2008-2020