Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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Position: Search valid to be valid superseded to be superseded abolished to be abolished
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GB/T 13389-2014 435.0 via email in 1~5 business day valid
GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single crystal and cutting wafer 180.0 via email in 1~3 business day valid
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption 180.0 via email in 1~3 business day valid
YS/T 224-1994 Thallium 30.0 via email in 1~3 business day to be superseded
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge 180.0 via email in 1~3 business day valid
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 180.0 via email in 1~3 business day valid
YS/T 223-1996 Selenium 105.0 via email in 1~3 business day superseded
GB/T 20229-2006 Gallium phosphide single crystal 90.0 via email in 1~3 business day valid
GB/T 25076-2010 Monocrystalline silicon of solar cell 180.0 via email in 1~3 business day valid
YS/T 23-1992 Thickness determination for silicon epitaxial layers - Stacking fault method 60.0 via email in 1~3 business day superseded
GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells 180.0 via email in 1~3 business day valid
GB/T 19199-2003 Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method 90.0 via email in 1~3 business day abolished
GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices 120.0 via email in 1~3 business day valid
YS/T 982-2014 165.0 via email in 1~3 business day valid
YS/T 13-2015 225.0 via email in 1~3 business day valid
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array 180.0 via email in 1~3 business day valid
GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry 180.0 via email in 1~3 business day valid
GB/T 12964-2003 Monocrystalline silicon polished wafers 150.0 via email in 1~3 business day valid
GB/T 12962-2005 Monoccrystalline silicon 150.0 via email in 1~3 business day superseded
GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance 390.0 via email in 1~3 business day valid
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