Standard No.:	GB/T 13389-1992
English Name:	Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
Chinese Name:	掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程
Chinese Classification:	H21    Metal physical property test method
Professional Classification:	GB    National Standard
Issued by:	AQSIQ
Issued on:	1992-2-19
Implemented on:	1992-10-1
Status:	superseded
Superseded by:	GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon
Superseded on:	2015-9-1
Abolished on:	2015-09-01
Language:	English
File Format:	PDF
Word Count:	8000 words
Price(USD):	240.00
Delivery:	via email in 1~3 business day

本标准规定了23℃时掺硼掺磷硅单晶电阻率和掺杂剂浓度间的换算方法。本标准适用于掺杂剂浓度1012～1021cm-3(电阻率0.0001~10，000Ω・cm)掺硼硅单晶和1012~5×1020cm-3(电阻率0.0002~4,000Ω・cm)掺磷硅单晶电阻率与掺杂剂浓度的换算，也可扩展到硅中激活能与硼、磷相似的其他掺杂剂。