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Position: Chinese Standard in English/GB/T 1551-1995
GB/T 1551-1995   Test method for resistivity of silicon and germanium bars using a two-point probe (English Version)
Standard No.: GB/T 1551-1995 Status:superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 6000 words Translation Price(USD):450.0 remind me the price change

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Implemented on:1995-1-2 Delivery: via email in 1~3 business day

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,2010-6-1,1995-1-2,ED45A98D3D6D30FB1513905622523
Standard No.: GB/T 1551-1995
English Name: Test method for resistivity of silicon and germanium bars using a two-point probe
Chinese Name: 硅、锗单晶电阻率测定直流两探针法
Chinese Classification: H21    Metal physical property test method
Professional Classification: GB    National Standard
ICS Classification: 77.040.30 77.040.30    Chemical analysis of metals 77.040.30
Source Content Issued by: SBTS
Issued on: 1995-04-18
Implemented on: 1995-1-2
Status: superseded
Superseded by:GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
Superseded on:2010-6-1
Superseding:GB 1551-1979 Test method for resistivity of silicon bars using a two-point probe
GB 5253-1985 Test method for resistivity of germanium bars using a two-point probe
Target Language: English
File Format: PDF
Word Count: 6000 words
Translation Price(USD): 450.0
Delivery: via email in 1~3 business day
本标准规定了用直流两探针测量硅和锗单晶锭电阻率的方法。本标准适用于测量截面积均匀的圆形、方形或矩形单晶锭的电阻率。
Code of China
Standard
GB/T 1551-1995  Test method for resistivity of silicon and germanium bars using a two-point probe (English Version)
Standard No.GB/T 1551-1995
Statussuperseded
LanguageEnglish
File FormatPDF
Word Count6000 words
Price(USD)450.0
Implemented on1995-1-2
Deliveryvia email in 1~3 business day
Detail of GB/T 1551-1995
Standard No.
GB/T 1551-1995
English Name
Test method for resistivity of silicon and germanium bars using a two-point probe
Chinese Name
硅、锗单晶电阻率测定直流两探针法
Chinese Classification
H21
Professional Classification
GB
ICS Classification
Issued by
SBTS
Issued on
1995-04-18
Implemented on
1995-1-2
Status
superseded
Superseded by
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
Superseded on
2010-6-1
Abolished on
Superseding
GB 1551-1979 Test method for resistivity of silicon bars using a two-point probe
GB 5253-1985 Test method for resistivity of germanium bars using a two-point probe
Language
English
File Format
PDF
Word Count
6000 words
Price(USD)
450.0
Keywords
GB/T 1551-1995, GB 1551-1995, GBT 1551-1995, GB/T1551-1995, GB/T 1551, GB/T1551, GB1551-1995, GB 1551, GB1551, GBT1551-1995, GBT 1551, GBT1551
Introduction of GB/T 1551-1995
本标准规定了用直流两探针测量硅和锗单晶锭电阻率的方法。本标准适用于测量截面积均匀的圆形、方形或矩形单晶锭的电阻率。
Contents of GB/T 1551-1995
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Keywords:
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