Standard No.:	GB/T 25188-2010
English Name:	Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy
Chinese Name:	硅晶片表面超薄氧化硅层厚度的测量 X射线光电子能谱法
Chinese Classification:	G04    Basic standards and general methods
Professional Classification:	GB    National Standard
ICS Classification:	71.040.40 71.040.40    Chemical analysis 71.040.40
Issued by:	AQSIQ;SAC
Issued on:	2010-9-26
Implemented on:	2011-8-1
Status:	valid
Language:	English
File Format:	PDF
Word Count:	6000 words
Price(USD):	180.00
Delivery:	via email in 1~3 business day

本标准规定了一种准确测量硅晶片表面超薄氧化硅层厚度的方法,即X 射线光电子能谱法(XPS)。本标准适用于热氧化法在硅晶片表面制备的超薄氧化硅层厚度的准确测量;通常,本标准适用的氧化硅层厚度不大于6nm。