Standard No.:	GB/T 42907-2023
English Name:	Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers―Noncontact eddy-current sensor
Chinese Name:	硅锭、硅块和硅片中非平衡载流子复合寿命的测试 非接触涡流感应法
Chinese Classification:	H21    Metal physical property test method
Professional Classification:	GB    National Standard
Source Content Issued by:	SAMR; SAC
Issued on:	2023-08-06
Implemented on:	2024-3-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	8500 words
Translation Price(USD):	255.0
Delivery:	via email in 1~3 business day

本文件描述了用非接触式涡流感应法测试太阳能电池用单晶硅锭、硅块和硅片中非平衡载流子复合寿命的方法。本文件适用于非平衡载流子复合寿命在0.1 μs～10 000 μs、电阻率在0.1 Ω・cm～10 000 Ω・cm的硅锭、硅块和硅片的测试。其中瞬态光电导衰减法适用于非平衡载流子复合寿命小于100 μs时硅锭、硅块和硅片的测试，准稳态光电导法适用于非平衡载流子复合寿命大于200 μs时硅锭、硅块和硅片的测试，非平衡载流子复合寿命在100 μs～200 μs时，两种测试方法均适用。