Standard No.:	GB/T 43493.1-2023
English Name:	Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects
Chinese Name:	半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类
Chinese Classification:	L90    Special electronic technology material
Professional Classification:	GB    National Standard
ICS Classification:	31.080.99 31.080.99    Other semiconductor devices 31.080.99
Source Content Issued by:	SAMR; SAC
Issued on:	2023-12-28
Implemented on:	2024-7-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	12500 words
Translation Price(USD):	375.0
Delivery:	via email in 1~3 business day

Semiconductor device - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects 1 Scope This document gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images. 2 Normative references There are no normative references in this document. 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. ISO and IEC maintain terminological databases for use in standardization at the following addresses: ——IEC Electropedia: available at http://www.electropedia.org/ ——ISO Online browsing platform: available at http://www.iso.org/obp 3.1 silicon carbide; SiC semiconductor crystal composed of silicon and carbon, which exhibits a large number of polytypes such as 3C, 4H, and 6H Note: A symbol like 4H gives the number of periodic stacking layers (2, 3, 4,…) and the crystal symmetry (H = hexagonal, C = cubic) of each polytype. 3.2 3C-SiC SiC crystal with zinc blende structure, in which three Si-C layers are periodically arranged along the <111 > direction 3.3 4H-SiC SiC crystal showing a hexagonal symmetry, in which four Si-C layers are periodically arranged along the crystallographic c-axis Note: The crystal structure of 4H-SiC is similar to wurtzite with a unit cell having four periodical occupied sites along the <0001> direction. 3.4 6H-SiC SiC crystal showing a hexagonal symmetry, in which six Si-C layers are periodically arranged along the crystallographic c-axis Note: The crystal structure of 6H-SiC is similar to wurtzite with a unit cell having six periodical occupied sites along the <0001> direction. 3.5 crystal plane plane, usually denoted as (hkl), representing the intersection of a plane with the a-, b- and c-axes of the unit cell at distances of 1 /h, 1 /k and 1 /l, where h, k and l are integers Note 1: The integers h, k and l are usually referred to as the Miller indices of a crystal plane. Note 2: In 4H-SiC showing a hexagonal symmetry, four-digit indices are frequently used for planes (hkil). [SOURCE: ISO 24173:2009, 3.2, modified - Note 2 has been entirely redrafted.] 3.6 crystal direction direction, denoted as [uvw], representing a vector direction in multiples of the basis vectors describing the a-, b- and c-axes Note 1: In 4H-SiC showing a hexagonal symmetry, four-digit indices [uvtw] are frequently used for crystal directions. Note 2: Families of symmetrically equivalent directions are written by and for cubic and hexagonal symmetries, respectively. [SOURCE: ISO 24173:2009, 3.3, modified - Note 1 and Note 2 have been added.] 3.7 polytypism phenomenon where a material occurs in several structural modifications, each of which can be regarded as built up by stacking layers of identical structure and chemical composition 3.8 polytype one of the modifications of monocrystalline material which shows polytypism 3.9 substrate material on which homoepitaxial layer is deposited 3.10 homoepitaxial layer thin monocrystalline film epitaxially-formed on a substrate of the same material and crystallographic orientation, inheriting the atomic order of the substrate 3.11 crystal monocrystalline material 3.12 lattice site arrangement position of the atoms in crystal 3.13 basal plane plane perpendicular to the crystallographic c-axis in a hexagonal crystal 3.14 prism plane plane parallel to the crystallographic c-axis in a hexagonal crystal 3.15 crystallographic c-axis principal axis in a hexagonal crystal 3.16 defect crystalline imperfection Note 1: Defect of SiC homoepitaxial wafers including point defect, extended defects, surface defects, and others. 3.17 crystal defect local alteration of crystal periodicity Note: Crystal defect is generally classified into point and extended defects. 3.18 point defect crystal defect that occurs at or around a single lattice site, such as a vacancy, interstitial, antisite, impurity and complex 3.19 vacancy lattice site of a lack of atom in crystal 3.20 interstitial atom that occupies a site in monocrystalline material, at which atoms usually do not exist 3.21 extended defect crystal defect extended in space in one, two or three-dimension 3.22 dislocation linear crystallographic defect in monocrystalline material 3.23 micropipe hollow tube extending approximately normal to the basal plane 3.24 threading screw dislocation; TSD screw dislocation penetrating through the crystal approximately normal to the basal plane 3.25 threading edge dislocation; TED edge dislocation penetrating through the crystal approximately normal to the basal plane 3.26 basal plane dislocation; BPD dislocation lying on the basal plane