Standard No.:	GB/T 43493.3-2023
English Name:	Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence
Chinese Name:	半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法
Chinese Classification:	L90    Special electronic technology material
Professional Classification:	GB    National Standard
ICS Classification:	31.080.99 31.080.99    Other semiconductor devices 31.080.99
Source Content Issued by:	SAMR; SAC
Issued on:	2023-12-28
Implemented on:	2024-7-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	12500 words
Translation Price(USD):	375.0
Delivery:	via email in 1~3 business day

Semiconductor device - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence 1 Scope This document provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers. 2 Normative references There are no normative references in this document. 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. ISO and IEC maintain terminological databases for use in standardization at the following addresses: ——IEC Electropedia: available at http://www.electropedia.org/ ——ISO Online browsing platform: available at http://www.iso.org/obp 3.1 Photoluminescence; PL emission of light from materials as a subsequence of electronic excitation by absorption of photons 3.2 photoluminescence imaging; PL imaging technique for capturing, processing and analysing images of defects using light source for electronic excitation, focusing optics, optical filter, optical image sensor and computer systems 3.3 focusing optics lens system used for magnifying and capturing optical images 3.4 optical filter optical component designed to transmit only a specific wavelength region and to block other regions 3.5 optical image sensor device to transform an optical image into digital data 3.6 image capturing process of creating a two-dimensional original digital image of defects in the wafer 3.7 original digital image digitized image acquired by an optical image sensor, without performing any image processing Note: An original digital image consists of pixels divided by a grid, and each pixel has a grey level. 3.8 charge-coupled device image sensor; CCD image sensor light-sensitive integrated circuit chip that converts detected optical information to electrical signals Note: A CCD consists of fine elements, each of which corresponds to a pixel of original digital images. 3.9 pixel smallest formative element of original digital images, to which a grey level is assigned 3.10 resolution number of pixels per unit length (or area) of original digital images Note: If resolutions in the X- and Y-directions are different, both values have to be recorded. 3.11 spatial resolution ability to distinguish two closely spaced points as two independent points 3.12 grey level degree of brightness defined in a greyscale Note: Degree of brightness is usually represented as a positive integer taken from greyscale. 3.13 greyscale range of grey shades from black to white EXAMPLE 8-bit greyscale has two-to-the-eighth-power (= 256) grey levels. Grey level 0 (the 1st level) corresponds to black, grey level 255 (the 256th level) to white. 3.14 image processing software manipulation of original digital images to prepare for subsequent image analysis Note: For example, image processing can be used to eliminate mistakes generated during image capturing or to reduce image information to the essential. 3.15 binary image image in which either 0 (black) or 1 (white) is assigned to each pixel 3.16 brightness average grey level of a specified part of optical images 3.17 contrast difference between the grey levels of two specified parts of optical images 3.18 shading correction software method for correcting non-uniformity of the illumination over the wafer surface 3.19 thresholding process of creating a binary image out of a greyscale image by setting exactly those pixels whose value is greater than a given threshold to white and setting the other pixels to black Note: To make a binary image, the grey level of each pixel in the original greyscale image is replaced with 0 (black) or 1 (white), depending on whether the grey level is greater than or less than or equal to a given threshold. 3.20 edge detection method of isolating and locating edges of defects and surface features in a given digital image 3.21 image analysis extraction of imaging information from processed digital images by software 3.22 image evaluation process of relating a series of values resulting from image analysis of one or more characteristic images via a classification scheme of defects 3.23 reference wafer specified wafer used for parameter settings, which has already been evaluated for checking the reproducibility and repeatability of optical inspection process for defects 3.24 test wafer semiconductor wafer under test to evaluate defects 3.25 crystal direction direction, usually denoted as [uvw], representing a vector direction in multiples of the basis vectors describing the a, b and c crystal axes Note 1: In 4H-SiC showing a hexagonal symmetry, four-digit indices [uvtw] are frequently used for crystal directions. Note 2: For the equivalent crystal orientation families of cubic symmetry and hexagonal symmetry, they are represented by (UV) and (UUTW), respectively. [SOURCE: ISO 24173:2009, 3.3, modified - The original note has been replaced by note 1 and note 2.] 3.26 defect crystalline imperfection 3.27 micropipe hollow tube extending approximately normal to the basal plane 3.28 threading screw dislocation; TSD screw dislocation penetrating through the crystal approximately normal to the basal plane 3.29 threading edge dislocation; TED edge dislocation penetrating through the crystal approximately normal to the basal plane 3.30 basal plane dislocation; BPD dislocation lying on the basal plane 3.31 scratch trace dense row of dislocations caused by mechanical damages on the substrate surface 3.32 stacking fault planar crystallographic defect in monocrystalline material, characterized by an error in the stacking sequence of crystallographic planes