GB/T 44292-2024 Electrostatic discharge susceptibility test for bypass diode applied in photovoltaic modules
1 Scope
This document describes a discrete component bypass diode electrostatic discharge (ESD) immunity test and data analysis method. The test method described subjects a bypass diode to a progressive ESD stress test and the analysis method provides a means for analyzing and extrapolating the resulting failures using the two-parameter Weibull distribution function.
It is the object of this document to establish a common and reproducible test method for determining diode surge voltage tolerance consistent with an ESD event during the manufacturing, packaging, transportation or installation processes of PV modules.
This document does not purport to address causes of electrostatic discharge or to establish pass or fail levels for bypass diode devices. It is the responsibility of the user to assess the ESD exposure level for their particular circumstances. The data generated by this procedure may support qualification of new design types, quality control for incoming material, and/or identify the need for additional ESD controls in the manufacturing process.
This document does not apply to large energy surge events such as direct or indirect lightning exposure, utility capacitor bank switching events, or the like.
2 Normative references
The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
GB/T 17626.2-2018 Electromagnetic compatibility - Testing and measurement techniques - Electrostatic discharge immunity test (IEC 61000-4-2:2008, IDT)
IEC TS 61836 Solar photovoltaic energy systems - Terms, definitions and symbols
3 Terms, definitions and abbreviated terms
For the purposes of this document, the terms and definitions of IEC TS 61836 and the following apply.
3.1
device under test
DUT
samples of device used in test, referred to as samples
3.2
contact discharge method
method of testing in which the electrode of the test generator is kept in contact with the DUT and the discharge is actuated by the discharge within the generator
Note: In this document, the contact is to the electrical lead of the DUT with no intervening electrical
3.3
diode check function
usage of a multimeter with diode function check to verify the diode is functional, short or open
3.4
direct application
application of the test surge directly to the DUT
Note: In this document, the surges are directed to bypass diodes for photovoltaic applications outside of the actual photovoltaic application (e.g., DUT are tested outside of the junction box and are not associated with the photovoltaic module itself).
3.5
surge relaxation time
amount of time necessary for the DUT to thermally stabilize in the event that surge application creates heat generation
4 General
Production line quality excursions due to bypass diode failure have been observed in the PV module manufacturing process due to changes in the electrostatic discharge (ESD) susceptibility of bypass diodes. This document provides a method to evaluate the susceptibility of bypass diodes to fail due to ESD events that may occur in the production, transport or installation of photovoltaic (PV) modules. ESD events occur whenever there is contact, or sufficiently close proximity between objects of different electrostatic charge. The magnitude of the ESD event is a function of the charge difference between the objects and the impedance associated with the charge transfer. Of specific interest in this document are relatively low energy, short-duration surges that may be associated with the manufacturing process, testing, or installation events where the bypass diodes are directly exposed to an ESD event.
Several standard ESD models exist for the evaluation of surge immunity. This document adopts the model provided by GB/T 17626.2-2018 that provides a method for assessing damage to electrical and electronic equipment subjected to static electricity discharges from operators directly, and from personnel to adjacent objects.
Note: See Annex A for instructions on the use of this document.
5 Sampling
Ten unconditioned diodes are required for this test. Several factors should be considered when making sample selection:
a) Diode types shall be identical. Different diode types will not provide useful surge immunity information. Each diode type that was tested during the development of this procedure yielded a different failure distribution indicating that mixed type testing would not be meaningful.
b) Diode date codes and factory location should be identical. The best characterization of a diode's surge immunity will be obtained when the diodes are from one manufacturing location and from a specific manufacturing batch. Comparison of the failure distributions that result from applying this procedure to several different date codes may provide the user with a qualitative understanding of the diode manufacturer's quality control from a surge immunity perspective. Similarity of results from different date codes would indicate a tighter quality control method.
c) Diodes are tested independently and outside of a module or junction box. The leads shall be in the form required before assembly into a junction box. Lead trimming or lead forming operations should be done before testing as these operations can create stress on the diode die that may have an impact on the diode's surge immunity.
6 Test equipment
Test equipment shall conform to the requirements stated in GB/T 17626.2-2018, Clause 6 using the discharge electrode for contact discharges. The discharge return connection from the surge generator shall be connected to a grounding block designed to accommodate the DUT samples, taking into account spacing requirements that may be required for formed leads as shown in Figure 1. Multiple DUT samples may be connected to a single grounding block, which shall meet the spacing requirements of sample leads, and the discharge loop of the surge generator is connected to the block.
The equipment shall be capable of positive polarity surges (with respect to earth ground), conducted in a single-surge mode, and with a voltage that can be incremented in 5 kV steps from 5 kV to a recommended 30 kV or higher capability. Equipment having a surge voltage limitation that is less than 30 kV may be used, but this may limit DUT failure information and subsequent data analysis for a very surge-resistant DUT.
Standard
GB/T 44292-2024 Electrostatic discharge susceptibility test for bypass diode applied in photovoltaic modules (English Version)
Standard No.
GB/T 44292-2024
Status
valid
Language
English
File Format
PDF
Word Count
9000 words
Price(USD)
270.0
Implemented on
2024-12-1
Delivery
via email in 1~3 business day
Detail of GB/T 44292-2024
Standard No.
GB/T 44292-2024
English Name
Electrostatic discharge susceptibility test for bypass diode applied in photovoltaic modules
GB/T 44292-2024 Electrostatic discharge susceptibility test for bypass diode applied in photovoltaic modules
1 Scope
This document describes a discrete component bypass diode electrostatic discharge (ESD) immunity test and data analysis method. The test method described subjects a bypass diode to a progressive ESD stress test and the analysis method provides a means for analyzing and extrapolating the resulting failures using the two-parameter Weibull distribution function.
It is the object of this document to establish a common and reproducible test method for determining diode surge voltage tolerance consistent with an ESD event during the manufacturing, packaging, transportation or installation processes of PV modules.
This document does not purport to address causes of electrostatic discharge or to establish pass or fail levels for bypass diode devices. It is the responsibility of the user to assess the ESD exposure level for their particular circumstances. The data generated by this procedure may support qualification of new design types, quality control for incoming material, and/or identify the need for additional ESD controls in the manufacturing process.
This document does not apply to large energy surge events such as direct or indirect lightning exposure, utility capacitor bank switching events, or the like.
2 Normative references
The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
GB/T 17626.2-2018 Electromagnetic compatibility - Testing and measurement techniques - Electrostatic discharge immunity test (IEC 61000-4-2:2008, IDT)
IEC TS 61836 Solar photovoltaic energy systems - Terms, definitions and symbols
3 Terms, definitions and abbreviated terms
For the purposes of this document, the terms and definitions of IEC TS 61836 and the following apply.
3.1
device under test
DUT
samples of device used in test, referred to as samples
3.2
contact discharge method
method of testing in which the electrode of the test generator is kept in contact with the DUT and the discharge is actuated by the discharge within the generator
Note: In this document, the contact is to the electrical lead of the DUT with no intervening electrical
3.3
diode check function
usage of a multimeter with diode function check to verify the diode is functional, short or open
3.4
direct application
application of the test surge directly to the DUT
Note: In this document, the surges are directed to bypass diodes for photovoltaic applications outside of the actual photovoltaic application (e.g., DUT are tested outside of the junction box and are not associated with the photovoltaic module itself).
3.5
surge relaxation time
amount of time necessary for the DUT to thermally stabilize in the event that surge application creates heat generation
4 General
Production line quality excursions due to bypass diode failure have been observed in the PV module manufacturing process due to changes in the electrostatic discharge (ESD) susceptibility of bypass diodes. This document provides a method to evaluate the susceptibility of bypass diodes to fail due to ESD events that may occur in the production, transport or installation of photovoltaic (PV) modules. ESD events occur whenever there is contact, or sufficiently close proximity between objects of different electrostatic charge. The magnitude of the ESD event is a function of the charge difference between the objects and the impedance associated with the charge transfer. Of specific interest in this document are relatively low energy, short-duration surges that may be associated with the manufacturing process, testing, or installation events where the bypass diodes are directly exposed to an ESD event.
Several standard ESD models exist for the evaluation of surge immunity. This document adopts the model provided by GB/T 17626.2-2018 that provides a method for assessing damage to electrical and electronic equipment subjected to static electricity discharges from operators directly, and from personnel to adjacent objects.
Note: See Annex A for instructions on the use of this document.
5 Sampling
Ten unconditioned diodes are required for this test. Several factors should be considered when making sample selection:
a) Diode types shall be identical. Different diode types will not provide useful surge immunity information. Each diode type that was tested during the development of this procedure yielded a different failure distribution indicating that mixed type testing would not be meaningful.
b) Diode date codes and factory location should be identical. The best characterization of a diode's surge immunity will be obtained when the diodes are from one manufacturing location and from a specific manufacturing batch. Comparison of the failure distributions that result from applying this procedure to several different date codes may provide the user with a qualitative understanding of the diode manufacturer's quality control from a surge immunity perspective. Similarity of results from different date codes would indicate a tighter quality control method.
c) Diodes are tested independently and outside of a module or junction box. The leads shall be in the form required before assembly into a junction box. Lead trimming or lead forming operations should be done before testing as these operations can create stress on the diode die that may have an impact on the diode's surge immunity.
6 Test equipment
Test equipment shall conform to the requirements stated in GB/T 17626.2-2018, Clause 6 using the discharge electrode for contact discharges. The discharge return connection from the surge generator shall be connected to a grounding block designed to accommodate the DUT samples, taking into account spacing requirements that may be required for formed leads as shown in Figure 1. Multiple DUT samples may be connected to a single grounding block, which shall meet the spacing requirements of sample leads, and the discharge loop of the surge generator is connected to the block.
The equipment shall be capable of positive polarity surges (with respect to earth ground), conducted in a single-surge mode, and with a voltage that can be incremented in 5 kV steps from 5 kV to a recommended 30 kV or higher capability. Equipment having a surge voltage limitation that is less than 30 kV may be used, but this may limit DUT failure information and subsequent data analysis for a very surge-resistant DUT.
