GB/T 44519-2024 Micro-electromechanical system (MEMS) technology - Radio frequency MEMS circulators and isolators
1 Scope
This document specifies the terminology, essential ratings and characteristics, and measuring methods of RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) circulators and isolators.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
IEC 60747-1 :2010 Semiconductor devices - Part 1: General
IEC 60749-10 Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock
IEC 60749-12 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency
IEC 60749-21 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
IEC 60749-22 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength
IEC 62047-1 Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 62047-1 and the
following apply.
3.1 General terms
3.1.1
circulator
three-port device in which the incident wave to any port is transmitted to the next port according to an order of sequence determined by the sense of a static magnetic biasing field
Note 1: By reversing the magnetic biasing field, the order of sequence is reversed.
Note 2: This property may be used to switch electromagnetic waves.
[SOURCE: GB/T 14733.2-2008, 726-17-08, modified.]
3.1.2
isolator
two-port device having much greater attenuation in one direction of propagation than in the opposite direction
[SOURCE: GB/T 14733.2-2008, 726-17-19, modified.]
3.2 RF characteristics parameters
3.2.1
insertion loss
Lins
resulting from the insertion of a network into a transmission system, the ratio of the power delivered to that part of the system following the network, before insertion of the network, to the power delivered to that same part after insertion of the network
Note: The insertion loss is generally expressed in decibels.
[SOURCE: GB/T 14733.2-2008, 726-06-07]
3.2.2
isolation
Liso
amplitude of the power attenuation, in the reverse direction of signal transmitted
3.2.3
return loss
Lret
ratio of the incident power at the specified port to the reflected power at the same port
Note: Usually the return loss is expressed in decibels.
[SOURCE: IEC 60747-1 6-4:2004, 3.3 modified.]
3.2.4
magnetic leakage
Bleak
maximum spatial field intensity of a RF MEMS circulator/isolator
4 Essential ratings and characteristics
4.1 Identification and types
General description of the function of the RF MEMS circulator/isolator and their applications should be stated. The statement should include the details of manufacturing technologies about the RF MEMS circulator/isolator with different operation, configuration, and actuation mechanism. The statement should also include packaged form including terminal numbering and package materials.
The RF MEMS circulator/isolator shall be clearly and durably marked in the order given below:
a) manufacture’s name or trade mark;
b) device type and serial number;
c) year and week (or month) of manufacture;
d) terminal identification (optional);
e) factory identification code (optional).
4.2 Application and specification description
Information on application of the RF MEMS circulator/isolator shall be given. Block diagrams of the RF MEMS circulator/isolator and the applied systems should be also given. All terminals should be identified in the block diagram and their functions shall also be stated.
See Figure 1 and Figure 2.
4.3 Limiting values and operating conditions
This statement should include limiting conditions and values. In particular, electrical limiting values (input power, handling power, power dissipation, etc.) and temperature conditions (operating, ambient, storage, and soldering) shall be given in the statement. These values are indicated within Table 1 .
Standard
GB/T 44519-2024 Industrial valves—Gearbox for valves (English Version)
GB/T 44519-2024 Micro-electromechanical system (MEMS) technology - Radio frequency MEMS circulators and isolators
1 Scope
This document specifies the terminology, essential ratings and characteristics, and measuring methods of RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) circulators and isolators.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
IEC 60747-1 :2010 Semiconductor devices - Part 1: General
IEC 60749-10 Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock
IEC 60749-12 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency
IEC 60749-21 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
IEC 60749-22 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength
IEC 62047-1 Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 62047-1 and the
following apply.
3.1 General terms
3.1.1
circulator
three-port device in which the incident wave to any port is transmitted to the next port according to an order of sequence determined by the sense of a static magnetic biasing field
Note 1: By reversing the magnetic biasing field, the order of sequence is reversed.
Note 2: This property may be used to switch electromagnetic waves.
[SOURCE: GB/T 14733.2-2008, 726-17-08, modified.]
3.1.2
isolator
two-port device having much greater attenuation in one direction of propagation than in the opposite direction
[SOURCE: GB/T 14733.2-2008, 726-17-19, modified.]
3.2 RF characteristics parameters
3.2.1
insertion loss
Lins
resulting from the insertion of a network into a transmission system, the ratio of the power delivered to that part of the system following the network, before insertion of the network, to the power delivered to that same part after insertion of the network
Note: The insertion loss is generally expressed in decibels.
[SOURCE: GB/T 14733.2-2008, 726-06-07]
3.2.2
isolation
Liso
amplitude of the power attenuation, in the reverse direction of signal transmitted
3.2.3
return loss
Lret
ratio of the incident power at the specified port to the reflected power at the same port
Note: Usually the return loss is expressed in decibels.
[SOURCE: IEC 60747-1 6-4:2004, 3.3 modified.]
3.2.4
magnetic leakage
Bleak
maximum spatial field intensity of a RF MEMS circulator/isolator
4 Essential ratings and characteristics
4.1 Identification and types
General description of the function of the RF MEMS circulator/isolator and their applications should be stated. The statement should include the details of manufacturing technologies about the RF MEMS circulator/isolator with different operation, configuration, and actuation mechanism. The statement should also include packaged form including terminal numbering and package materials.
The RF MEMS circulator/isolator shall be clearly and durably marked in the order given below:
a) manufacture’s name or trade mark;
b) device type and serial number;
c) year and week (or month) of manufacture;
d) terminal identification (optional);
e) factory identification code (optional).
4.2 Application and specification description
Information on application of the RF MEMS circulator/isolator shall be given. Block diagrams of the RF MEMS circulator/isolator and the applied systems should be also given. All terminals should be identified in the block diagram and their functions shall also be stated.
See Figure 1 and Figure 2.
4.3 Limiting values and operating conditions
This statement should include limiting conditions and values. In particular, electrical limiting values (input power, handling power, power dissipation, etc.) and temperature conditions (operating, ambient, storage, and soldering) shall be given in the statement. These values are indicated within Table 1 .
