Detail of GB/T 44924-2024

Introduction of GB/T 44924-2024

GB/T 44924-2024 Semiconductor integrated circuits - Measuring methods for RF transmitter/receiver 1 Scope This document specifies the basic principles and test procedures of measuring methods for electrical characteristics of semiconductor integrated circuits RF transmitter/receiver (hereinafter referred to as “device”). This document is applicable to primary frequency conversion RF transmitter/receiver with receiving functions, transmitting functions, and integrated transceiver functions. Other types of transmitters and receivers can be used for reference. 2 Normative references The following documents contain requirements which, through reference in this text, constitute provisions of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. GB/T 4937.1-2006 Semiconductor devices- Mechanical and climatic test methods - Part 1: General GB/T 9178 Terminology for integrated circuits 3 Terms and definitions For the purposes of this document, the terms and definitions given in GB/T 9178 and the following apply. 3.1 dynamic power consumption total power consumed when the device has an excitation signal at the input end and a load at the output end 3.2 gain ratio of output power to input power when the device operates under specified input/output power conditions 3.3 gain flatness difference between the maximum power gain and the minimum power gain of the device within a specified frequency range and under specified input/output power conditions 3.4 linear gain device operates in an area where the output power variation and the input power variation are the same, and the ratio of the output power to the input power 3.5 linear gain flatness difference between the maximum linear power gain and the minimum linear power gain of the device within the specified frequency range, in the region where the output power variation and the input power variation are the same 3.6 output power measured output power of the device under the specified input power condition 4 General requirements 4.1 General The specific requirements for device measuring are specified in the detailed specifications. If the source is not indicated, the use of the term "shall meet the requirements" or "as specified" in this document refers to the need to comply with the relevant detailed specifications. 4.2 Environmental requirements Unless otherwise specified, all tests shall be conducted under the environmental conditions specified in Clause 4 of GB/T 4937.1-2006 4.3 Test conditions Unless otherwise specified, measuring of device parameters shall be performed under the following conditions in accordance with the detailed device specification: a) Ambient temperature; b) Operating voltage; c) Control level; d) Local oscillator port frequency and power; e) Input port frequency and power. 4.4 Measuring system and instrument equipment The requirements for the measuring system and instrument equipment are as follows: a) During measuring, the errors introduced by measuring cables, attenuators, power amplifiers and filters under specified conditions shall be considered; b) The accuracy of the measuring instrument shall meet the requirements of the measuring specifications, pass the calibration, and be within the validity period; c) The signal source, spectrum analyzer and network analyzer all need to be synchronized by reference; d) The measuring equipment shall be fully preheated according to the preheating time specified in the instructions. If the instructions do not specify the preheating time, the general preheating time is 30 min; e) The measuring equipment shall be well grounded.

Contents of GB/T 44924-2024

Contents Foreword i 1 Scope 2 Normative references 3 Terms and definitions 4 General requirements 4.1 General 4.2 Environmental requirements 4.3 Test conditions 4.4 Measuring system and instrument equipment 4.5 Measuring precautions 5 Detailed requirements 5.1 Dynamic power consumption Pa(mW) 5.2 Gain GP(dB) 5.3 Gain flatness ΔGP(dB) 5.4 Linear gain GPLIN(dB) 5.5 Linear gain flatness ΔGPLIN(dB) 5.6 Output power PO(dBm) 5.7 Anti-burnout power PKSH(dBm) 5.8 Efficiency η(%) 5.9 Gain adjustable range GR(dB) 5.10 Image rejection ratio RIMJ(dBc) 5.11 Harmonic rejection ratio RHR(dBc) 5.12 local oscillator rejection ratio RLO(dBc) 5.13 Side-band rejection ratio RSB(dBc) 5.14 Spurs suppression ratio RFS(dB) 5.15 P_NdB compression point CPN(dBm) 5.16 Output of interception point of 2nd order product OIP2 (dBm) 5.17 Input of interception point of 2nd order product IIP2 (dBm) 5.18 Output of interception point of 3rd order product OIP3 (dBm) 5.19 Input of interception point of 3rd order product IIP3 (dBm) 5.20 Turn⁃on time tON(ns) 5.21 Turn⁃off time tOFF(ns) 5.22 Transceiver switching time tTR 5.23 Noise figure NF(dB) 5.24 Return loss RL(dB)/voltage standing⁃wave ratio VSWR 5.25 Impedance Z(Ω) 5.26 Group delay tGD(ns) 5.27 Phase non⁃linearity PNL(°) 5.28 Noise floor NFL(dBm/Hz) 5.29 Local oscillator leakage LOL(dBm) 5.30 Amplitude stability ΔAPO(dB) 5.31 Phase stability Δθ(°) 5.32 Phase consistency PSER(°) 5.33 Amplitude consistency AMER(dB) 5.34 Quadrature phase error PEIQ(°) 5.35 Quadrature gain error AEIQ(dB) 5.36 Error vector magnitude EVM(%) 5.37 Adjacent channel power ratio ACPR(dB) 5.38 Channel isolation KISO(dB) 5.39 Carrier leakage CL(dB)