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| Position: Chinese Standard in English/GB/T 6617-1995 |
| GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe (English Version) | |||
| Standard No.: | GB/T 6617-1995 | Status: | superseded |
| Language: | English | File Format: | |
| Word Count: | 3500 words | Price(USD): | 300.00 remind me the price change |
| Implemented on: | 1995-1-2 | Delivery: | via email in 1~3 business day |
| Standard No.: | GB/T 6617-1995 |
| English Name: | Test method for measuring resistivity of silicon wafers using spreading resistance probe |
| Chinese Name: | 硅片电阻率测定 扩展电阻探针法 |
| Chinese Classification: | H21 Metal physical property test method |
| Professional Classification: | GB National Standard |
| Issued by: | SBTS |
| Issued on: | 1995-04-18 |
| Implemented on: | 1995-1-2 |
| Status: | superseded |
| Superseded by: | GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe |
| Superseded on: | 2010-6-1 |
| Superseding: | GB 6617-1986 Standard method for measuring resistivity of silicon wafers using spreading resistance probe |
| Language: | English |
| File Format: | |
| Word Count: | 3500 words |
| Price(USD): | 300.00 |
| Delivery: | via email in 1~3 business day |