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Standard
| SJ 20016-1992 Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes (English Version) |
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Detail of SJ 20016-1992
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Introduction of SJ 20016-1992
本规范规定了3DG130型NPN硅高频小功率晶体管(以下简称器件)的详细要求。该种器件按GJB33-85《半导体分立器件总规范》的规定，提供产品保证的三个等级(GP、GT和GCT级)。
Contents of SJ 20016-1992