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| SJ 20173-1992 Semiconductor discrete device-Detail specification for NPN silicon low-power switching transistor of Types 3DK2218,3DK2218A, 3DK2219 and 3DK2219A (English Version) |
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Detail of SJ 20173-1992
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Introduction of SJ 20173-1992
本规范规定了3DK2218、3DK2218A、3DK2219和3DK2219A型NPN硅小功率开关晶体管（以下简称器件）的详细要求。每种器件按GJB33《半导体分立器件规范》的规定，提供产品保证的三个等级（GP、GT和GCT级）。
Contents of SJ 20173-1992