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| SJ 3244.1-1989 Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide (English Version) |
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Detail of SJ 3244.1-1989
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Introduction of SJ 3244.1-1989
本标准规定了砷化镓和磷化铟材料霍尔迁移率和载流子浓度的测量原理，测量步骤，试验结果的讣算，精度。 本标准适用于电阻牢小于10^(4)Ωcm的砷化镓和磷化铟材料(包括半绝缘衬底上生长的砷化镓外延层)霍尔迁移率和载流子浓度的测量。也适用于其它半导体材料的测量。由于霍尔迁移率是由霍尔系数和电阻率
Contents of SJ 3244.1-1989