2025-12-21 216.73.216.41
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 32282-2015 Test method for disoclation density of GaN single crystal—Cathodoluminescence spectroscopy 150.0 via email in 1~3 business day valid,,2016-11-1
GB/T 32189-2015 Test method for surface roughness of GaN single crystal substrate by atomic force microscope 180.0 via email in 1~3 business day valid,,2016-11-1
GB/T 32188-2015 The method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate 140.0 via email in 1~3 business day valid,,2016-11-1
GB/T 31780-2015 Critical temperature measurement―Critical temperature of composite superconductors by a resistance method 160.0 via email in 1~3 business day valid,,2016-2-1
GB/T 31475-2015 Requirements for solder paste for high-quality interconnections in electronics assembly 250.0 via email in 1 business day valid,,2016-1-1
GB/T 31474-2015 Soldering fluxes for high-quality interconnections in electronics assembly 310.0 via email in 1~5 business day valid,,2016-1-1
YS/T 1065.1-2015 Methods for physical performance determination of zeolite―Part 1:Determination of calcium binding capacity―EDTA titrimetric method 105.0 via email in 1~3 business day valid,,2015-10-1
YS/T 15-2015 Test method for thickness of epitaxial layers and diffused layers by angle lap stain 105.0 via email in 1~3 business day valid,,2015-10-1
YS/T 1065.4-2015 Methods for physical performance determination of zeolite―Part 4:Determination of non-ionic liquid-carrying capacity 80.0 via email in 1~3 business day valid,,2015-10-1
YS/T 1065.2-2015 Methods for physical performance determination of zeolite―Part 2:Determination of particle size―Centrifugal sedimentation method 80.0 via email in 1~3 business day valid,,2015-10-1
GB/T 30653-2014 Test method for crystal quality of Ⅲ-nitride epitaxial layers 150.0 via email in 1~3 business day valid,,2015-9-1
GB/T 30654-2014 Test method for lattice constant of Ⅲ-nitride epitaxial layers 150.0 via email in 1~3 business day valid,,2015-9-1
GB/T 31353-2014 Test methods for bow of sapphire substrates 150.0 via email in 1~3 business day valid,,2015-9-1
GB/T 31352-2014 Test methods for warp of sapphire substrates 150.0 via email in 1~3 business day valid,,2015-9-1
GB/T 30655-2014 Test methods for internal quantum efficiency of nitride LED epitaxial layers 150.0 via email in 1~3 business day valid,,2015-9-1
GB/T 30857-2014 Standard test method for thickness and thickness variation on sapphire substrates 100.0 via email in 1~3 business day valid,,2015-4-1
YS/T 1002-2014 Calculation method of anode effect frequency and anode effect duration for aluminum electrolysis 105.0 via email in 1~3 business day valid,,2015-4-1
GB/T 30859-2014 Test method for warp and waviness of silicon wafers for solar cells 180.0 via email in 1~3 business day valid,,2015-4-1
GB/T 30860-2014 Test methods for surface roughness and saw mark of silicon wafers for solar cells 180.0 via email in 1~3 business day valid,,2015-4-1
GB/T 30869-2014 Test method for thickness and total thickness variation of silicon wafers for solar cell 150.0 via email in 1~3 business day valid,,2015-2-1
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GB/T 32282-2015 Test method for disoclation density of GaN single crystal—Cathodoluminescence spectroscopy 
  Issued on: 2015-12-10   Price(USD): 150.0
GB/T 32189-2015 Test method for surface roughness of GaN single crystal substrate by atomic force microscope 
  Issued on: 2015-12-10   Price(USD): 180.0
GB/T 32188-2015 The method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate 
  Issued on: 2015-12-10   Price(USD): 140.0
GB/T 31780-2015 Critical temperature measurement―Critical temperature of composite superconductors by a resistance method 
  Issued on: 2015-07-03   Price(USD): 160.0
GB/T 31475-2015 Requirements for solder paste for high-quality interconnections in electronics assembly 
  Issued on: 2015-05-15   Price(USD): 250.0
GB/T 31474-2015 Soldering fluxes for high-quality interconnections in electronics assembly 
  Issued on: 2015-05-15   Price(USD): 310.0
YS/T 1065.1-2015 Methods for physical performance determination of zeolite―Part 1:Determination of calcium binding capacity―EDTA titrimetric method 
  Issued on: 2015-04-30   Price(USD): 105.0
YS/T 15-2015 Test method for thickness of epitaxial layers and diffused layers by angle lap stain 
  Issued on: 2015-04-30   Price(USD): 105.0
YS/T 1065.4-2015 Methods for physical performance determination of zeolite―Part 4:Determination of non-ionic liquid-carrying capacity 
  Issued on: 2015-04-30   Price(USD): 80.0
YS/T 1065.2-2015 Methods for physical performance determination of zeolite―Part 2:Determination of particle size―Centrifugal sedimentation method 
  Issued on: 2015-04-30   Price(USD): 80.0
GB/T 30653-2014 Test method for crystal quality of Ⅲ-nitride epitaxial layers 
  Issued on: 2014-12-31   Price(USD): 150.0
GB/T 30654-2014 Test method for lattice constant of Ⅲ-nitride epitaxial layers 
  Issued on: 2014-12-31   Price(USD): 150.0
GB/T 31353-2014 Test methods for bow of sapphire substrates 
  Issued on: 2014-12-31   Price(USD): 150.0
GB/T 31352-2014 Test methods for warp of sapphire substrates 
  Issued on: 2014-12-31   Price(USD): 150.0
GB/T 30655-2014 Test methods for internal quantum efficiency of nitride LED epitaxial layers 
  Issued on: 2014-12-31   Price(USD): 150.0
GB/T 30857-2014 Standard test method for thickness and thickness variation on sapphire substrates 
  Issued on: 2014-07-24   Price(USD): 100.0
YS/T 1002-2014 Calculation method of anode effect frequency and anode effect duration for aluminum electrolysis 
  Issued on: 2014-10-14   Price(USD): 105.0
GB/T 30859-2014 Test method for warp and waviness of silicon wafers for solar cells 
  Issued on: 2014-07-24   Price(USD): 180.0
GB/T 30860-2014 Test methods for surface roughness and saw mark of silicon wafers for solar cells 
  Issued on: 2014-07-24   Price(USD): 180.0
GB/T 30869-2014 Test method for thickness and total thickness variation of silicon wafers for solar cell 
  Issued on: 2014-07-24   Price(USD): 150.0
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