| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add to Cart |
| GB/T 24581-2022 |
Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method |
$165.00 |
via email in 1~3 business day |
valid,,2022-10-1 |
|
| GB/T 24582-2023 |
Test method for measuring surface metal impurity content of polycrystalline silicon—Acid extraction-inductively coupled plasma mass spectrometry method |
$170.00 |
via email in 1~3 business day |
valid,,2024-3-1 |
|
| GB/T 26067-2010 |
Standard test method for dimensions of notches on silicon wafers |
$180.00 |
via email in 1~3 business day |
valid,,2011-10-1 |
|
| GB/T 26070-2010 |
Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method |
$240.00 |
via email in 1~3 business day |
valid,,2011-10-1 |
|
| GB/T 26074-2010 |
Germanium monocrystal—Measurement of resistivity-DC linear four-point probe |
$160.00 |
immediately |
valid,,2011-10-1 |
|
| GB/T 32277-2015 |
Test method for instrumental neutron activation analysis (INAA) of silicon |
$260.00 |
via email in 1~3 business day |
valid,,2017-1-1 |
|
| GB/T 32281-2015 |
Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock by secondary ion mass spectrometry |
$150.00 |
via email in 1~3 business day |
valid,,2017-1-1 |
|
| GB/T 35306-2017 |
Test method for carbon and oxygen content of single crystal silicon―Low temperature fourier transform infrared spectrometry |
$165.00 |
via email in 1~3 business day |
superseded,2024-3-1,2018-7-1 |
|
| GB/T 35306-2023 |
Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method |
$170.00 |
via email in 1~3 business day |
valid,,2024-3-1 |
|
| GB/T 35309-2017 |
Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies |
$160.00 |
via email in 1~3 business day |
valid,,2018-7-1 |
|
| GB/T 37049-2018 |
Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method |
$165.00 |
via email in 1~3 business day |
valid,,2019-4-1 |
|
| GB/T 37211.1-2018 |
Methods for chemical analysis of germanium metal—Part 1:Determination of arsenic content—Arsenic stain method |
$100.00 |
via email in 1~3 business day |
valid,,2019-11-1 |
|
| GB/T 37211.2-2018 |
Methods for chemical analysis of germanium metal—Part 2:Determination of aluminium,iron,copper,nickle,lead,cadmium,magnesium,cobalt,indium,zinc content—Inductively coupled plasma mass spectrometry method |
$160.00 |
via email in 1~3 business day |
valid,,2019-11-1 |
|
| GB/T 37385-2019 |
Test method for chloride content of silicon—Ion chromatography method |
$165.00 |
via email in 1~3 business day |
valid,,2020-2-1 |
|
| GB/T 38976-2020 |
Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method |
$105.00 |
via email in 1~3 business day |
valid,,2021-6-1 |
|
| GB/T 39144-2020 |
Test method for magnesium content in gallium nitride materials—Secondary ion mass spectrometry |
$105.00 |
via email in 1~3 business day |
valid,,2021-9-1 |
|
| GB/T 39145-2020 |
Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry |
$165.00 |
via email in 1~3 business day |
valid,,2021-9-1 |
|
| GB/T 4059-2007 |
Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere |
$120.00 |
via email in 1~3 business day |
superseded,2019-11-1,2008-2-1 |
|
| GB/T 4059-2018 |
Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere |
$120.00 |
via email in 1~3 business day |
valid,,2019-11-1 |
|
| GB/T 4060-2007 |
Polycrystalline silicon—Examination method—Vacuum zone-melting on boron |
$120.00 |
via email in 1~3 business day |
superseded,2019-6-1,2008-2-1 |
|
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