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Position: Chinese Standard in English/GB/T 26070-2010
GB/T 26070-2010   Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method (English Version)
Standard No.: GB/T 26070-2010 Status:valid remind me the status change

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Target Language:English File Format:PDF
Word Count: 8000 words Translation Price(USD):240.0 remind me the price change

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Implemented on:2011-10-1 Delivery: via email in 1~3 business day

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Standard No.: GB/T 26070-2010
English Name: Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
Chinese Name: 化合物半导体抛光晶片亚表面损伤的反射差分谱测试方法
Chinese Classification: H17    Semimetal and semiconductor material analysis method
Professional Classification: GB    National Standard
ICS Classification: 77.040.99 77.040.99    Other methods of testing of metals 77.040.99
Source Content Issued by: AQSIQ
Issued on: 2011-1-10
Implemented on: 2011-10-1
Status: valid
Target Language: English
File Format: PDF
Word Count: 8000 words
Translation Price(USD): 240.0
Delivery: via email in 1~3 business day
本标准规定了Ⅲ-Ⅴ族化合物半导体单晶抛光片亚表面损伤的测试方法。
本标准适用于GaAs、InP(GaP、GaSb可参照进行)等化合物半导体单晶抛光片亚表面损伤的测量。
Code of China
Standard
GB/T 26070-2010   Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method (English Version)
Standard No.GB/T 26070-2010
Statusvalid
LanguageEnglish
File FormatPDF
Word Count8000 words
Price(USD)240.0
Implemented on2011-10-1
Deliveryvia email in 1~3 business day
Detail of GB/T 26070-2010
Standard No.
GB/T 26070-2010
English Name
Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
Chinese Name
化合物半导体抛光晶片亚表面损伤的反射差分谱测试方法
Chinese Classification
H17
Professional Classification
GB
ICS Classification
Issued by
AQSIQ
Issued on
2011-1-10
Implemented on
2011-10-1
Status
valid
Superseded by
Superseded on
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
8000 words
Price(USD)
240.0
Keywords
GB/T 26070-2010, GB 26070-2010, GBT 26070-2010, GB/T26070-2010, GB/T 26070, GB/T26070, GB26070-2010, GB 26070, GB26070, GBT26070-2010, GBT 26070, GBT26070
Introduction of GB/T 26070-2010
本标准规定了Ⅲ-Ⅴ族化合物半导体单晶抛光片亚表面损伤的测试方法。
本标准适用于GaAs、InP(GaP、GaSb可参照进行)等化合物半导体单晶抛光片亚表面损伤的测量。
Contents of GB/T 26070-2010
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Keywords:
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