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| Position: Chinese Standard in English/GB 7576-1987 |
| GB 7576-1987 Blank detail specification for case -rated bipolar transistors for high--frequncy amplification (Applicable for certification) (English Version) | |||
| Standard No.: | GB 7576-1987 | Status: | superseded remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 7000 words | Translation Price(USD): | 210.0 remind me the price change |
| Implemented on: | 1987-11-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | GB 7576-1987 |
| English Name: | Blank detail specification for case -rated bipolar transistors for high--frequncy amplification (Applicable for certification) |
| Chinese Name: | 高频放大管壳额定的双极型晶体管空白详细规范(可供认证用) |
| Chinese Classification: | L42 Semiconductor triode |
| Professional Classification: | GB National Standard |
| Implemented on: | 1987-11-1 |
| Status: | superseded |
| Superseded by: | GB/T 7576-1998 devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification |
| Superseded on: | 1999-6-1 |
| Target Language: | English |
| File Format: | |
| Word Count: | 7000 words |
| Translation Price(USD): | 210.0 |
| Delivery: | via email in 1~3 business day |