Standard No.:	GB/T 17170-2015
English Name:	Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
Chinese Name:	半绝缘砷化镓单晶深施主EL2浓度红外吸收测试方法
Chinese Classification:	H17    Semimetal and semiconductor material analysis method
Professional Classification:	GB    National Standard
Issued by:	AQSIQ and MOH
Issued on:	2015-12-10
Implemented on:	2016-7-1
Status:	valid
Superseding:	GB/T 17170-1997 Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
Language:	English
File Format:	PDF
Word Count:	3500 words
Price(USD):	90.0
Delivery:	via email in 1~3 business day

本标准规定了半绝缘砷化镓单晶深施主 EL2浓度的红外吸收测试方法。
本标准适用于电阻率大于106 Ω・cm 的非掺杂和碳掺杂半绝缘砷化镓单晶深施主 EL2浓度的测定。
本标准不适用于掺铬半绝缘砷化镓单晶深施主 EL2浓度的测定。